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    IRG7S Price and Stock

    Infineon Technologies AG IRG7S313UTRLPBF

    IGBT 330V 40A 78W D2PAK
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    DigiKey IRG7S313UTRLPBF Cut Tape
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    Infineon Technologies AG IRG7S313UPBF

    Igbt, n Channel,330V,40A, d2Pak; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.14V; Power Dissipation:78W; Collector Emitter Voltage Max:330V; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Infineon IRG7S313UPBF
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    Newark IRG7S313UPBF Bulk 1
    • 1 $2.34
    • 10 $1.99
    • 100 $1.6
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    International Rectifier IRG7S313U

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    Quest Components IRG7S313U 617
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    International Rectifier IRG7SC28U

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    Quest Components IRG7SC28U 250
    • 1 $12.6416
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    • 100 $9.8324
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    International Rectifier IRG7SLC12F

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    Quest Components IRG7SLC12F 152
    • 1 $18.7499
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    • 100 $14.5833
    • 1000 $13.3333
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    IRG7S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG7S313UTRLPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 330V 40A 78W D2PAK Original PDF
    IRG7SC12FPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 24A 69W D2PAK Original PDF

    IRG7S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient


    Original     		PDF IRG7SC12FPbF EIA-418.

    IRG7SC12FPBF

    Abstract: C-150 IRF530S irg7sc12
    Text: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution


    Original     		PDF IRG7SC12FPbF EIA-418. IRG7SC12FPBF C-150 IRF530S irg7sc12

    IRG7SC28U

    Abstract: No abstract text available
    Text: PD - 97569 PDP TRENCH IGBT IRG7SC28UPbF Key Parameters Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRG7SC28UPbF IRG7SC28U

    IRG7SC28U

    Abstract: IRG7SC28 IRG7SC28UPBF IRG7S 626t
    Text: PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Key Parameters Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF 7569A IRG7SC28UPbF IRG7SC28U IRG7SC28 IRG7SC28UPBF IRG7S 626t

    irg7s319

    Abstract: No abstract text available
    Text: PD - 97155 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRG7S319UPbF EIA-418. irg7s319

    irg7s313

    Abstract: No abstract text available
    Text: PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF 7402A IRG7S313UPbF EIA-418. irg7s313

    IRG7S319

    Abstract: IRF530S JESD22-A114 irg7s319upbf IRG7S
    Text: PD - 97155 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF IRG7S319UPbF which90 EIA-418. IRG7S319 IRF530S JESD22-A114 irg7s319upbf IRG7S

    irg7s313u

    Abstract: IRG7S313UPBF irg7s313 IRF530S JESD22-A114 IRG7S3
    Text: PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


    Original     		PDF 7402A IRG7S313UPbF whic90 EIA-418. irg7s313u IRG7S313UPBF irg7s313 IRF530S JESD22-A114 IRG7S3