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    International Rectifier IRG7SC12FPBF

    INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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    IRG7SC12FPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG7SC12FPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 24A 69W D2PAK Original PDF

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    Abstract: No abstract text available
    Text: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient


    Original     		PDF IRG7SC12FPbF EIA-418.

    IRG7SC12FPBF

    Abstract: C-150 IRF530S irg7sc12
    Text: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution


    Original     		PDF IRG7SC12FPbF EIA-418. IRG7SC12FPBF C-150 IRF530S irg7sc12