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    IRG4BC40 Price and Stock

    Rochester Electronics LLC IRG4BC40KPBF

    IRG4BC40 - DISCRETE IGBT WITHOUT
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    DigiKey IRG4BC40KPBF Bulk 9,723 142
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    Rochester Electronics LLC IRG4BC40UPBF

    IGBT 600V 40A TO220AB
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    DigiKey IRG4BC40UPBF Bulk 151 151
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    Infineon Technologies AG IRG4BC40K

    IGBT 600V 42A 160W TO220AB
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    DigiKey IRG4BC40K Tube 200
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    Infineon Technologies AG IRG4BC40U

    IGBT 600V 40A 160W TO220AB
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    DigiKey IRG4BC40U Tube 200
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    Infineon Technologies AG IRG4BC40W

    IGBT 600V 40A 160W TO220AB
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    DigiKey IRG4BC40W Tube 200
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    Find more IRG4BC40 price and stock on Findchips.com

    IRG4BC40 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG4BC40 International Rectifier Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V Original PDF
    IRG4BC40F International Rectifier Fast Speed IGBT Original PDF
    IRG4BC40F International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40F with Standard Packaging Original PDF
    IRG4BC40F International Rectifier Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC40FPBF International Rectifier Original PDF
    IRG4BC40FPBF International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC40F with Lead Free Packaging Original PDF
    IRG4BC40K International Rectifier IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC40K International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40K with Standard Packaging Original PDF
    IRG4BC40K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC40KPBF International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC40K with Lead Free Packaging Original PDF
    IRG4BC40KPBF International Rectifier Original PDF
    IRG4BC40S International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; A IRG4BC40S with Standard Packaging Original PDF
    IRG4BC40S International Rectifier Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC40S International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC40SD International Rectifier Fit Rate / Equivalent Device Hours Original PDF
    IRG4BC40SPBF International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; Similar to IRG4BC40S with Lead Free Packaging Original PDF
    IRG4BC40SPBF International Rectifier Original PDF
    IRG4BC40U International Rectifier IGBT Original PDF
    IRG4BC40U International Rectifier 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package; A IRG4BC40U with Standard Packaging Original PDF
    IRG4BC40U International Rectifier UltraFast Speed IGBT Original PDF

    IRG4BC40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter


    Original     		PDF 5429A IRG4BC40WPbF 150KHz 4BC40WPbF O-220AB

    3000 0442

    Abstract: No abstract text available
    Text: PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 95788B IRG4BC40WSPbF IRG4BC40WLPbF EIA-418. 3000 0442

    IRG4BC40W

    Abstract: irg4bc40 354 GE
    Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1654A IRG4BC40W IRG4BC40W irg4bc40 354 GE

    IRG4BC40S

    Abstract: No abstract text available
    Text: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91455B IRG4BC40S O-220AB O-220AB V252-7105 IRG4BC40S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95788 IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC40WSPbF IRG4BC40WLPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91455B IRG4BC40S O-220AB O-220AB

    IRG4BC40K

    Abstract: No abstract text available
    Text: PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency


    Original     		PDF IRG4BC40K O-247AC O-220AB IRG4BC40K

    IRG4BC40S

    Abstract: TO-220AB IRG4BC40S
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1455 IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC40S O-220AB O-220AB IRG4BC40S TO-220AB IRG4BC40S

    IRG4BC40F

    Abstract: No abstract text available
    Text: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91454B IRG4BC40F O-220AB O-220AB C252-7105 IRG4BC40F

    irg4bc40

    Abstract: IRG4BC40W
    Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1654A IRG4BC40W an52-7105 irg4bc40 IRG4BC40W

    IRG4BC40U

    Abstract: No abstract text available
    Text: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91456E IRG4BC40U O-220AB O-220AB IRG4BC40U

    f1010

    Abstract: 555 triangular wave B-989
    Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC40FPbF O-220AB O-220AB O-220AB. f1010 555 triangular wave B-989

    Untitled

    Abstract: No abstract text available
    Text: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91454B IRG4BC40F O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC40WS IRG4BC40WL EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter


    Original     		PDF 5429A IRG4BC40WPbF 150KHz O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95788A IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 5788A IRG4BC40WSPbF IRG4BC40WLPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC40FPbF O-220AB O-220AB O-220AB.

    ic c 838

    Abstract: IRG4BC40S
    Text: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91455B IRG4BC40S O-220AB O-220AB ic c 838 IRG4BC40S

    Untitled

    Abstract: No abstract text available
    Text: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z


    OCR Scan     		PDF IRG4BC40S

    IOR 451

    Abstract: No abstract text available
    Text: International IQR Rectifier PD - 9 .1 4 5 4 A IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -6 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC40F T0-220AB IOR 451

    J 420 G

    Abstract: No abstract text available
    Text: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies


    OCR Scan     		PDF pd-9165 IRG4BC40W --600V J 420 G

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1654A International I«R Rectifier IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • D e sign ed e xp ressly fo r S w itch -M od e Pow er Vqes —600V S up ply and PFC pow er factor correction a p plicatio ns • Ind u stry-b e n ch m a rk sw itch ing losses im prove


    OCR Scan     		PDF IRG4BC40W --600V

    rectifier d 355 n 2000

    Abstract: transistor iqr
    Text: International IOR Rectifier PD - 9.1592 IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >50 kHz , and Short Circuit Rated to 10ps @ 125°C, VGe = 15V


    OCR Scan     		PDF IRG4BC40K O-247AC rectifier d 355 n 2000 transistor iqr

    15 3cv sec

    Abstract: No abstract text available
    Text: International IQR Rectifier PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, V qe = 15V


    OCR Scan     		PDF IRG4BC40K O-247AC O-22C1AB 15 3cv sec