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    IRG4BC40U

    Abstract: No abstract text available
    Text: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91456E IRG4BC40U O-220AB O-220AB IRG4BC40U

    Untitled

    Abstract: No abstract text available
    Text: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91456E IRG4BC40U O-220AB O-220AB

    IRG4BC40

    Abstract: IRG4BC40U
    Text: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91456E IRG4BC40U O-220AB O-220AB IRG4BC40 IRG4BC40U