IRFZ48N
Abstract: IRFz48N MOSFET
Text: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier
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IRFZ48N
Abstract: IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet
Text: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N FEATURES •Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION
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IRFZ48N
IRFZ48N
IRFz48N MOSFET
n-channel mosfet transistor
equivalent IRFZ48N
IRFZ48N equivalent
mosfet transistor
TRANSISTOR mosfet
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IRFZ48N
Abstract: No abstract text available
Text: PD - 9.1406A International IGR Rectifier IRFZ48N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss = 55 V ^ D S o n = 0.0160 lD = 64A Description
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IRFZ48N
IRFZ48N
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IRFz48N MOSFET
Abstract: IRFZ48N equivalent IRFZ48N
Text: PD - 9.1406A IRFZ48N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier
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IRFZ48N
O-220
IRFz48N MOSFET
IRFZ48N
equivalent IRFZ48N
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IRFz48N MOSFET
Abstract: IRFZ48N
Text: PD - IRFZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 53A S Fifth Generation HEXFETs from International Rectifier
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IRFZ48N
O-220
IRFz48N MOSFET
IRFZ48N
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IRFZ48N
Abstract: equivalent IRFZ48N
Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International
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IRFZ48N
O-220
O-220AB
IRFZ48N
equivalent IRFZ48N
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve
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IRFZ48N
O-220
0D5344b
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IRFz48N MOSFET
Abstract: equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N
Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International
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IRFZ48N
O-220
IRFz48N MOSFET
equivalent IRFZ48N
IRFZ48N
IRFZ48N equivalent
Mosfet IRFZ48N
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Untitled
Abstract: No abstract text available
Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International
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IRFZ48N
O-220
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IRFZ44N complementary
Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55
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BUK7508-55
BUK7514-55A
BUK7524-55A
BUK7530-55A
BUK7570-55A
BUZ100S
BUZ102S
BUZ110S
BUZ111S
IRF1010N
IRFZ44N complementary
IRF3205 COMPLEMENTARY
IRF3205 application
a/surface mount IRFZ44N
NBP6060
IRF3205 TO-220
philips 435-2
HRF3205
harris 4365
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HRF3205 equivalent
Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
Text: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3
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LC00004
HUF75545P3
O-220AB
SUP75N08-10
HUF75545S3S
O-263AB
HUF75645P3
HUF75645S3S
HRF3205 equivalent
IRFP064N equivalent
IRF3205 equivalent
IRFz44n equivalent
irf3205 ups
irf3710 equivalent
HUF75337P3 equivalent
IRFZ48N equivalent
irfp064n
HUF75343P3 equivalent
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pn junction diode
Abstract: p-n junction diode IRFZ48N
Text: IRFIZ48NPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) g fs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
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IRFIZ48NPbF
IRFZ48N
O-220
pn junction diode
p-n junction diode
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c366
Abstract: C369 c368 IRFP048N
Text: PD - 9.1409A International IQ R Rectifier IRFP048N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V ^D S o n = 0.016Q lD = 64A Description
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IRFP048N
O-247
C-368
C-369
c366
C369
c368
IRFP048N
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Untitled
Abstract: No abstract text available
Text: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
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equivalent IRFZ48N
Abstract: IRFZ48N IRFZ48N equivalent
Text: PD -94835 IRFIZ48NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.016Ω G ID = 40A S Description
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IRFIZ48NPbF
O-220
equivalent IRFZ48N
IRFZ48N
IRFZ48N equivalent
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IRFIZ48N
Abstract: IRF1010 IRFI840G IRFZ48N
Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description
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IRFIZ48N
O-220
IRFIZ48N
IRF1010
IRFI840G
IRFZ48N
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IRFP048N
Abstract: IRFPE30 IRFZ48N
Text: Previous Datasheet Index Next Data Sheet PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A
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IRFP048N
O-247
IRFP048N
IRFPE30
IRFZ48N
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY International M R Rectifier PD 9.1408 IRFZ48NS HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description VDSS = 55V
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IRFZ48NS
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Untitled
Abstract: No abstract text available
Text: PD -94835 IRFIZ48NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.016Ω G ID = 40A S Description
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IRFIZ48NPbF
O-220
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IRFZ48N
Abstract: equivalent IRFZ48N IRFZ48N equivalent
Text: PD -94835 IRFIZ48NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.016Ω G ID = 40A S Description
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IRFIZ48NPbF
O-220
IRFZ48N
equivalent IRFZ48N
IRFZ48N equivalent
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IRF1010
Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Text: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V
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IRFIZ48N
IRF1010
IRFI840G
IRFIZ48N
IRFZ48N
IRFZ48N equivalent
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IRFz48N MOSFET
Abstract: IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description
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IRFIZ48N
O-220
IRFz48N MOSFET
IRF1010
IRFI840G
IRFIZ48N
IRFZ48N
IRFZ48N equivalent
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TO247AC
Abstract: IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302
Text: PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A S Description Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
TO247AC
IRFz48N MOSFET
DM marking code
equivalent IRFZ48N
IRFP048N
IRFPE30
IRFZ48N
st l 9302
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Untitled
Abstract: No abstract text available
Text: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ48NS • Low-profilethrough-hole(IRFZ48NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V
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IRFZ48NS)
IRFZ48NL)
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