IRFZ48N
Abstract: IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet
Text: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N FEATURES •Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION
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IRFZ48N
IRFZ48N
IRFz48N MOSFET
n-channel mosfet transistor
equivalent IRFZ48N
IRFZ48N equivalent
mosfet transistor
TRANSISTOR mosfet
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IRFz48N MOSFET
Abstract: IRFZ48N equivalent IRFZ48N
Text: PD - 9.1406A IRFZ48N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier
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IRFZ48N
O-220
IRFz48N MOSFET
IRFZ48N
equivalent IRFZ48N
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IRFz48N MOSFET
Abstract: IRFZ48N
Text: PD - IRFZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 53A S Fifth Generation HEXFETs from International Rectifier
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IRFZ48N
O-220
IRFz48N MOSFET
IRFZ48N
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IRFZ48N
Abstract: equivalent IRFZ48N
Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International
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IRFZ48N
O-220
O-220AB
IRFZ48N
equivalent IRFZ48N
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IRFz48N MOSFET
Abstract: equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N
Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International
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IRFZ48N
O-220
IRFz48N MOSFET
equivalent IRFZ48N
IRFZ48N
IRFZ48N equivalent
Mosfet IRFZ48N
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Untitled
Abstract: No abstract text available
Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International
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IRFZ48N
O-220
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IRFZ44N complementary
Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55
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BUK7508-55
BUK7514-55A
BUK7524-55A
BUK7530-55A
BUK7570-55A
BUZ100S
BUZ102S
BUZ110S
BUZ111S
IRF1010N
IRFZ44N complementary
IRF3205 COMPLEMENTARY
IRF3205 application
a/surface mount IRFZ44N
NBP6060
IRF3205 TO-220
philips 435-2
HRF3205
harris 4365
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HRF3205 equivalent
Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
Text: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3
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LC00004
HUF75545P3
O-220AB
SUP75N08-10
HUF75545S3S
O-263AB
HUF75645P3
HUF75645S3S
HRF3205 equivalent
IRFP064N equivalent
IRF3205 equivalent
IRFz44n equivalent
irf3205 ups
irf3710 equivalent
HUF75337P3 equivalent
IRFZ48N equivalent
irfp064n
HUF75343P3 equivalent
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pn junction diode
Abstract: p-n junction diode IRFZ48N
Text: IRFIZ48NPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) g fs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
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IRFIZ48NPbF
IRFZ48N
O-220
pn junction diode
p-n junction diode
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IRF3205 smd
Abstract: irf640* spice regulator dpak SOIC 8P LDO 3.3 DAC Combo irf3205 spice ldo regulator iru1010-25cp IRU1050-CP
Text: International Rectifier LDOs and MOSFETs International Rectifier, the power conversion expert, offers optimal power semiconductors for portable, telecom, power supply, computer, motor drive, ballast, and automotive applications. More voltage ratings, from 20 V to 1000 V. More
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IRF1104
IRF640N
IRF3205*
IRF1010N*
IRFZ48N*
IRCZ34
IRFZ46N*
IRCZ24
IRL1004
IRFZ44N*
IRF3205 smd
irf640* spice
regulator dpak
SOIC 8P
LDO 3.3
DAC Combo
irf3205 spice
ldo regulator
iru1010-25cp
IRU1050-CP
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equivalent IRFZ48N
Abstract: IRFZ48N IRFZ48N equivalent
Text: PD -94835 IRFIZ48NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.016Ω G ID = 40A S Description
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IRFIZ48NPbF
O-220
equivalent IRFZ48N
IRFZ48N
IRFZ48N equivalent
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IRFIZ48N
Abstract: IRF1010 IRFI840G IRFZ48N
Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description
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IRFIZ48N
O-220
IRFIZ48N
IRF1010
IRFI840G
IRFZ48N
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IRFP048N
Abstract: IRFPE30 IRFZ48N
Text: Previous Datasheet Index Next Data Sheet PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A
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IRFP048N
O-247
IRFP048N
IRFPE30
IRFZ48N
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Untitled
Abstract: No abstract text available
Text: PD -94835 IRFIZ48NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.016Ω G ID = 40A S Description
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IRFIZ48NPbF
O-220
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IRF1010
Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Text: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V
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IRFIZ48N
IRF1010
IRFI840G
IRFIZ48N
IRFZ48N
IRFZ48N equivalent
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IRFz48N MOSFET
Abstract: IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Text: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description
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IRFIZ48N
O-220
IRFz48N MOSFET
IRF1010
IRFI840G
IRFIZ48N
IRFZ48N
IRFZ48N equivalent
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TO247AC
Abstract: IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302
Text: PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A S Description Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
TO247AC
IRFz48N MOSFET
DM marking code
equivalent IRFZ48N
IRFP048N
IRFPE30
IRFZ48N
st l 9302
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IRFZ48N
Abstract: IRFz48N MOSFET
Text: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier
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IRFZ48N
Abstract: No abstract text available
Text: PD - 9.1406A International IGR Rectifier IRFZ48N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss = 55 V ^ D S o n = 0.0160 lD = 64A Description
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IRFZ48N
IRFZ48N
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve
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IRFZ48N
O-220
0D5344b
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c366
Abstract: C369 c368 IRFP048N
Text: PD - 9.1409A International IQ R Rectifier IRFP048N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V ^D S o n = 0.016Q lD = 64A Description
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IRFP048N
O-247
C-368
C-369
c366
C369
c368
IRFP048N
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Untitled
Abstract: No abstract text available
Text: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY International M R Rectifier PD 9.1408 IRFZ48NS HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description VDSS = 55V
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IRFZ48NS
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Untitled
Abstract: No abstract text available
Text: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ48NS • Low-profilethrough-hole(IRFZ48NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V
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IRFZ48NS)
IRFZ48NL)
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