Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFZ48 MOSFETS Search Results

    IRFZ48 MOSFETS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRFZ48 MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95563 IRFZ48RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications l Lead-Free Description


    Original     		PDF IRFZ48RPbF IRFZ48 08-Mar-07

    IRF530S

    Abstract: IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL
    Text: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET


    Original     		PDF IRFZ48 IRFZ48RSPbF IRFZ48RLPbF EIA-418. IRF530S IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL

    IRFZ48

    Abstract: IRFZ48R
    Text: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications


    Original     		PDF IRFZ48R IRFZ48 12-Mar-07 IRFZ48 IRFZ48R

    IRFZ48

    Abstract: No abstract text available
    Text: PD - 95563 IRFZ48RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications l Lead-Free Description


    Original     		PDF IRFZ48RPbF IRFZ48 12-Mar-07 IRFZ48

    IRFZ48

    Abstract: IRF530S IRFZ48RS IRL3103L IRFZ48RL
    Text: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET


    Original     		PDF IRFZ48 IRFZ48RSPbF IRFZ48RLPbF 12-Mar-07 IRFZ48 IRF530S IRFZ48RS IRL3103L IRFZ48RL

    IRFZ48

    Abstract: No abstract text available
    Text: PD - 95563 IRFZ48RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications l Lead-Free Description


    Original     		PDF IRFZ48RPbF IRFZ48 O-220AB. O-220AB IRFZ48

    IRFZ48RL

    Abstract: No abstract text available
    Text: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET


    Original     		PDF IRFZ48 IRFZ48RSPbF IRFZ48RLPbF 08-Mar-07 IRFZ48RL

    Untitled

    Abstract: No abstract text available
    Text: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications


    Original     		PDF IRFZ48R IRFZ48 08-Mar-07

    IRFZ48

    Abstract: IRFZ48R
    Text: PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications


    Original     		PDF IRFZ48R IRFZ48 Th252-7105 IRFZ48 IRFZ48R

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFZ48RL

    Abstract: No abstract text available
    Text: PD - 94074 IRFZ48RS IRFZ48RL HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D VDSS = 60V RDS on = 0.018Ω


    Original     		PDF IRFZ48RS IRFZ48RL IRFZ48 08-Mar-07 IRFZ48RL

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRFZ48

    Abstract: SiHFZ48 SiHFZ48-E3 IRFZ48 MOSFETs
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 O-220 O-220 18-Jul-08 IRFZ48 SiHFZ48-E3 IRFZ48 MOSFETs

    IRFZ48

    Abstract: IRFZ48RL IRFZ48RS IRFZ44RL
    Text: PD - 94074 IRFZ48RS IRFZ48RL HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D VDSS = 60V RDS on = 0.018Ω


    Original     		PDF IRFZ48RS IRFZ48RL IRFZ48 IRFZ48 IRFZ48RL IRFZ48RS IRFZ44RL

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 11-Mar-11

    IRFZ48

    Abstract: IRFZ48RL IRFZ48RS IRFZ48 mosfet driver IRFZ44 TIF 122
    Text: PD - 94074 IRFZ48RS IRFZ48RL HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D VDSS = 60V RDS on = 0.018Ω


    Original     		PDF IRFZ48RS IRFZ48RL IRFZ48 12-Mar-07 IRFZ48 IRFZ48RL IRFZ48RS IRFZ48 mosfet driver IRFZ44 TIF 122

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFZ48

    Abstract: SiHFZ48 SiHFZ48-E3
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 O-220 O-220 18-Jul-08 IRFZ48 SiHFZ48-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFZ48, SiHFZ48 2002/95/EC O-220AB O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IEC 269-5

    Abstract: No abstract text available
    Text: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 0.018 110 29 36 Single D DESCRIPTION S Third generation Power MOSFETs from Vishay utilize


    Original     		PDF IRFZ48S, IRFZ48L, SiHFZ48S SiHFZ48L 2002/95/EC 18-Jul-08 IEC 269-5

    BU271

    Abstract: IRF540 24334 FSN0920
    Text: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A


    OCR Scan     		PDF O-220 O-257 O-254 O-258 BU271 IRF540 24334 FSN0920