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    IRFZ44 MOSFET Search Results

    IRFZ44 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRFZ44 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFZ44

    Abstract: IRFZ44R
    Text: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications


    Original     		PDF IRFZ44R IRFZ44 Th252-7105 IRFZ44 IRFZ44R

    Untitled

    Abstract: No abstract text available
    Text: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications


    Original     		PDF IRFZ44R IRFZ44 08-Mar-07

    IRFZ44

    Abstract: IRFZ44R
    Text: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications


    Original     		PDF IRFZ44R IRFZ44 12-Mar-07 IRFZ44 IRFZ44R

    IRFZ44 data

    Abstract: irfz44 gate drive for mosfet irfz44
    Text: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements


    Original     		PDF IRFZ44, SiHFZ44 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFZ44 data irfz44 gate drive for mosfet irfz44

    gate drive for mosfet irfz44

    Abstract: IRFZ44 data IRFZ44 mosfet switching circuit
    Text: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements


    Original     		PDF IRFZ44, SiHFZ44 2002/95/EC O-220AB 11-Mar-11 gate drive for mosfet irfz44 IRFZ44 data IRFZ44 mosfet switching circuit

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 IRFZ44 Advanced Power MOSFET FEATURES » » » » Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge


    Original     		PDF IRFZ44 O-220 50A/us, 250ns,

    IRFZ44 data

    Abstract: IRFZ44 MOSFETs IRFZ44 IRFZ44 mosfet switching circuit voltage regulator mar 920 MOSFET IRFZ44
    Text: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements


    Original     		PDF IRFZ44, SiHFZ44 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFZ44 data IRFZ44 MOSFETs IRFZ44 IRFZ44 mosfet switching circuit voltage regulator mar 920 MOSFET IRFZ44

    Untitled

    Abstract: No abstract text available
    Text: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description


    Original     		PDF IRFZ44RPbF IRFZ44 08-Mar-07

    IRFZ44 mosfet

    Abstract: irfz44 ge SEC irfz44 IRFZ44 equivalent IRFZ44 IRFZ44 DATASHEET 12v irfz44
    Text: $GYDQFHG 3RZHU 026 7 IRFZ44 FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.024Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 50 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    Original     		PDF IRFZ44 O-220 IRFZ44 mosfet irfz44 ge SEC irfz44 IRFZ44 equivalent IRFZ44 IRFZ44 DATASHEET 12v irfz44

    irfz44

    Abstract: No abstract text available
    Text: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements


    Original     		PDF IRFZ44, SiHFZ44 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 irfz44

    IRFZ44

    Abstract: irfz44rpbf
    Text: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description


    Original     		PDF IRFZ44RPbF IRFZ44 12-Mar-07 IRFZ44 irfz44rpbf

    gate drive for mosfet irfz44

    Abstract: IRFZ44 IRFZ44 equivalent IRFZ44 DATASHEET IRFZ44 mosfet IRFZ44 data IRFZ44 mosfet switching circuit application irfz44 IRFZ44PBF IRFZ44 parallel
    Text: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ44, SiHFZ44 O-220 18-Jul-08 gate drive for mosfet irfz44 IRFZ44 IRFZ44 equivalent IRFZ44 DATASHEET IRFZ44 mosfet IRFZ44 data IRFZ44 mosfet switching circuit application irfz44 IRFZ44PBF IRFZ44 parallel

    irfz44

    Abstract: gate drive for mosfet irfz44 IRFZ44 mosfet switching circuit IRFZ44 data IRFZ44 mosfet
    Text: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ44, SiHFZ44 O-220 12-Mar-07 irfz44 gate drive for mosfet irfz44 IRFZ44 mosfet switching circuit IRFZ44 data IRFZ44 mosfet

    Untitled

    Abstract: No abstract text available
    Text: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements


    Original     		PDF IRFZ44, SiHFZ44 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFZ44RPBF

    Abstract: IRFZ44
    Text: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description


    Original     		PDF IRFZ44RPbF IRFZ44 O-220AB. O-220AB IRFZ44RPBF IRFZ44

    BU271

    Abstract: IRF540 24334 FSN0920
    Text: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A


    OCR Scan     		PDF O-220 O-257 O-254 O-258 BU271 IRF540 24334 FSN0920

    SSP60N06

    Abstract: irf630 irf640 SSP50N06 ssp15n06
    Text: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520


    OCR Scan     		PDF O-220 IRFZ10 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 SSP60N06 irf630 irf640 SSP50N06 ssp15n06

    irfz44

    Abstract: IRFz44 n-channel MOSFET IRFZ44 mosfet IRFZ44 MOSFETs IRFZ44 mosfet operation MOSFET IRFZ44
    Text: N-CHANNEL POWER MOSFETS IRFZ44/45 FEATURES • • • • • • • Lower R ds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFZ44/45 IRFZ44 IRFZ45 IRFz44 n-channel MOSFET IRFZ44 mosfet IRFZ44 MOSFETs IRFZ44 mosfet operation MOSFET IRFZ44

    irfz44

    Abstract: No abstract text available
    Text: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s i o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input cap acitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRFZ44/45 IRFZ40/42 irfz44

    SEC irfz44

    Abstract: MOSFET IRFZ44 IRFz44 n-channel MOSFET IRFZ44 data
    Text: IRFZ44 Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 2 4 Q 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRFZ44 SEC irfz44 MOSFET IRFZ44 IRFz44 n-channel MOSFET IRFZ44 data

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFZ44/40 FEATURES • Lower R ds<on • Im proved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability


    OCR Scan     		PDF IRFZ44/40 IRFZ44 IRFZ40 7Tb4142

    MOSFET IRFZ44

    Abstract: IRFZ44 mosfet switching circuit IRFZ44 IRFZ44 mosfet n channel a type irfz44 mosfet POWER MOSFET N-Channel 230V IRFz44 n-channel MOSFET
    Text: IRFZ44 A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 2 4 Q , 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRFZ44 MOSFET IRFZ44 IRFZ44 mosfet switching circuit IRFZ44 IRFZ44 mosfet n channel a type irfz44 mosfet POWER MOSFET N-Channel 230V IRFz44 n-channel MOSFET

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure


    OCR Scan     		PDF IRFZ44/45 IRFZ40/42 QD124SD IRFZ44 IRFZ40 IRFZ45 GQ12454

    Untitled

    Abstract: No abstract text available
    Text: IRFZ44 A d van ced Power MOSFET FEATURES B V DSS - 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 2 4 Î2 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRFZ44 O-220