Untitled
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: E.1 is.il ^>E.tnL-dona\jt.c.t:oi iPtoaacfi, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRFZ34 Power MOSFET FEATURES • Dynamic dV/dt Rating PRODUCT SUMMARY V DS (V) 60 VGS = 10V FlDS(on) (^)
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PDF
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IRFZ34
O-220AB
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Untitled
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
11-Mar-11
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irfz34
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfz34
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Untitled
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFZ34
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFZ34 FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.04Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 30 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature
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PDF
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IRFZ34
O-220
IRFZ34
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IRFZ34 Datasheet
Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
O-220
O-220
18-Jul-08
IRFZ34 Datasheet
irfz34
SiHFZ34-E3
irfz34 mosfets
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irfz34
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
O-220
12-Mar-07
irfz34
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Untitled
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
irfz34
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
irfz34
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Untitled
Abstract: No abstract text available
Text: IRFZ34 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)21 @Temp (øC)100# IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)88 Minimum Operating Temp (øC)-55õ
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PDF
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IRFZ34
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BU271
Abstract: IRF540 24334 FSN0920
Text: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A
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OCR Scan
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PDF
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O-220
O-257
O-254
O-258
BU271
IRF540
24334
FSN0920
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IRFZ34
Abstract: IRFZ30 irfz34 mosfets
Text: IRFZ34/35 IRFZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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OCR Scan
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PDF
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IRFZ34/35
IRFZ30/32
IRFZ34
IRFZ35
IRFZ30
IRFZ32
irfz34 mosfets
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SSP60N06
Abstract: irf630 irf640 SSP50N06 ssp15n06
Text: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520
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OCR Scan
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PDF
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O-220
IRFZ10
IRFZ20
SSP15N05
IRFZ30
IRFZ40
SSP50N05
SSP60N05
IRFZ14
IRFZ24
SSP60N06
irf630 irf640
SSP50N06
ssp15n06
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFZ34/30 FEATURES • Lower R d s On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability
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OCR Scan
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PDF
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IRFZ34/30
IRFZ34
IRFZ30
002fllÃ
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1RFZ34
Abstract: SMD IRFZ34 AN-994 IRFZ34 IRFZ34S SMD-220
Text: International ^¡Rectifier PD-9.509B IRFZ34 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s ~ 60V ^DS(on = 0 - 0 5 0 0 ID = 30A Description DATA
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OCR Scan
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PDF
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IRFZ34
O-22Q
O-220
1RFZ34
SMD IRFZ34
AN-994
IRFZ34S
SMD-220
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Untitled
Abstract: No abstract text available
Text: IRFZ34 Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature
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OCR Scan
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PDF
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IRFZ34
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1RFZ34
Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Text: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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PDF
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5S452
0Q1577Ö
IRFZ34
O-220
S5452
1RFZ34
STM TO-220 marking
IRFZ34
IRFZ34 international
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irfz34
Abstract: IRFZ35 c439 diode diode C438
Text: HE D | 4055452 000ßbö4 4 | Data Sheet No. PD-9.509A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR AVALANCHE AND dv/dt RATED 1 7 5 °C OPERATING TEM PERATURE HEXFET TRANSISTORS IRFZ34 IRFZ35 ;n N-CHANNEL Product Summary 60 Volt, 0.050 Ohm HEXFET
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OCR Scan
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PDF
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IRFZ34
IRFZ35
T0-220AB
C-439
IRFZ34,
IRFZ35
T-39-13
c439 diode
diode C438
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IRF34N
Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
Text: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss
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OCR Scan
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PDF
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IRFZ34N
O-220
a9246
IRF34N
1RFZ34N
1RFZ34
dioda rectifier
V145M
100MS
IRF1010
VIQR9246
dioda 12B
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irfz34
Abstract: No abstract text available
Text: IRFZ34 A d van ced Power MOSFET FEATURES B V DSS - 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Î2 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ 175°C Operating Temperature
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OCR Scan
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PDF
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IRFZ34
O-220
irfz34
|
IRFZ34 mosfet
Abstract: IRFZ34 ic regulator 48v 30a
Text: IRFZ34 A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature
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OCR Scan
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PDF
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IRFZ34
IRFZ34 mosfet
IRFZ34
ic regulator 48v 30a
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