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    IRFY430 Search Results

    IRFY430 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFY430 International Rectifier 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY430 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY430 International Rectifier HEXFET Transistors Scan PDF
    IRFY430 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY430C International Rectifier HEXFET Power Mosfet Original PDF
    IRFY430C Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY430C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY430CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY430CM International Rectifier Power MOSFET Original PDF
    IRFY430CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY430CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY430M International Rectifier 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY430M Semelab N-Channel Power MOSFET for HI-REL Applications Original PDF
    IRFY430M International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY430M International Rectifier HEXFET Transistors Scan PDF
    IRFY430M-T257 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY430M-T257 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF

    IRFY430 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFY430M IRFY430M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 12.70 19.05 1 2 3 0.89 1.14 2.54 BSC 2.65


    Original     		PDF IRFY430M IRFY430M IRFY430 IRFY430" IRFY430 IRFY430C IRFY430C-JQR-B IRFY430-JQR-B IRFY430M-T257

    37ATC

    Abstract: IRFY430 IRFY430M
    Text: IRFY430M IRFY430M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 12.70 19.05 1 2 3 0.89 1.14 2.54 BSC 2.65


    Original     		PDF IRFY430M IRFY430 00A/ms 300ms, 37ATC IRFY430 IRFY430M

    717 MOSFET

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226305 SHD226305B TECHNICAL DATA DATA SHEET 336, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 1.6 Ohm MOSFET œ Isolated and Hermetically Sealed œ Equivalent to IRFY430M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226305 SHD226305B IRFY430M O-257 717 MOSFET

    IRFY430C

    Abstract: IRFY430CM
    Text: Provisional Data Sheet No. PD 9.1291B HEXFET POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF 1291B IRFY430CM IRFY430C IRFY430CM

    IRFY430C

    Abstract: IRFY430CM
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1291B HEXFET POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF 1291B IRFY430CM IRFY430C IRFY430CM

    IRFY430M

    Abstract: SHD226305 SHD226305B 717 MOSFET
    Text: SENSITRON SEMICONDUCTOR SHD226305 SHD226305B TECHNICAL DATA DATA SHEET 336, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 1.6 Ohm MOSFET œ Isolated and Hermetically Sealed œ Equivalent to IRFY430M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226305 SHD226305B IRFY430M IRFY430M SHD226305 SHD226305B 717 MOSFET

    9528

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF IRFY430 IRFY430M O-257AB O220M O-257AB) IRFY430M 9528

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF IRFY430 IRFY430M O-257AB 280mJ O220M O-257AB) IRFY430

    IRFY430C

    Abstract: No abstract text available
    Text: IRFY430C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 500V ID = 4.5A RDS(ON) = 1.5Ω Ω 1.0 (0.039)


    Original     		PDF IRFY430C O257AB O257AB O220M) 13-Sep-02 IRFY430C

    IRFY430M-T257

    Abstract: diode 75W
    Text: IRFY430M-T257 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL


    Original     		PDF IRFY430M-T257 O257AA 00A/ms 300ms, IRFY430M-T257 diode 75W

    Untitled

    Abstract: No abstract text available
    Text: PD - 91291C POWER MOSFET THRU-HOLE TO-257AA IRFY430C,IRFY430CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) IRFY430C 1.5 Ω 4.5A ID Ceramic Eyelets IRFY430CM 1.5 Ω 4.5A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91291C O-257AA) IRFY430C IRFY430CM IRFY430C IRFY430C, O-257AA

    IRFY430C

    Abstract: IRFY430CM
    Text: PD - 91291C POWER MOSFET THRU-HOLE TO-257AA IRFY430C,IRFY430CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) IRFY430C 1.5 Ω 4.5A ID Ceramic Eyelets IRFY430CM 1.5 Ω 4.5A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91291C O-257AA) IRFY430C IRFY430CM IRFY430C IRFY430C, O-257AA IRFY430CM

    37ATC

    Abstract: IRFY430M-T257
    Text: IRFY430M-T257 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL


    Original     		PDF IRFY430M-T257 O257AA 00A/ms 300ms, 37ATC IRFY430M-T257

    specification of mosfet irf

    Abstract: IRFY430 IRFY430C IRFY430CM IRFY430M
    Text: PD - 94191 POWER MOSFET THRU-HOLE TO-257AA IRFY430,IRFY430M 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) IRFY430 1.5 Ω 4.5A ID Glass Eyelets IRFY430M 1.5 Ω 4.5A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY430 IRFY430M IRFY430 IRFY430, O-257AA specification of mosfet irf IRFY430C IRFY430CM IRFY430M

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­


    OCR Scan     		PDF IRFY430CM 500Volt, S5452

    Untitled

    Abstract: No abstract text available
    Text: mi = V r= INI IRFY430 SEM E LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 .70 5 .00 10.41 1 0.67 0.70 0.90 3.56 Dia. 3.81 V DSS I D(cont) 500V 3.7A ^DS(on) 1.6Q 1 2 3 FEATURES -~»J|U0-89 Ü u 2 .54 2 .65


    OCR Scan     		PDF IRFY430 U0-89 O-220M

    Untitled

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17


    OCR Scan     		PDF IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD

    JANTX2N7334

    Abstract: irfy430
    Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6


    OCR Scan     		PDF irfg110 M0-036AB 2n7334 jantx2n7334 jantxv2n7334 irfg5110 irfg6110 2n7336 irfy430