Untitled
Abstract: No abstract text available
Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 40 mΩ 66 mΩ 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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6411A
IRFTS9342PbF
IRFTS9342TRPbF
D-020D
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IRFTS9342TRPBF
Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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6411A
IRFTS9342PbF
IRFTS9342TRPbF
D-020D
IRFTS9342TRPBF
8342T
IRFTS9342
6342T
TSOP6 Marking Code 17
IRF 840 MOSFET
IRF n 30v
IRF5803
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SOT890-1
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse
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OD-123+
060TYP
118TYP
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
SOT890-1
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SOD123 ZL marking
Abstract: No abstract text available
Text: WILLAS FM120-M+ 2SB1260 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR PNP
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OT-89
OD-123+
FM120-M+
2SB1260
FM1200-M+
OT-89
OD-123H
060TYP
FM120-MH
FM130-MH
SOD123 ZL marking
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irft 200
Abstract: IRFT002 irfc9024 HEXFET Power MOSFET P-Channel IRFT004 IRFT001 irfc9
Text: INTERNATIONAL RECTIFIER 2bE D • 4055452 QG1Q44B 3 ■ Preliminary Data Sheet No. PD-S.021B -3*?-a 7 International H>! Rectifier HEXFET Power Module IRFT Series 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are
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QG1Q44B
IRFT001
IRFT002
IRFT004
1RFC024
IRFC014
IRFC120
IRFC9010
IRFC9120
IRFC9024
irft 200
IRFT002
HEXFET Power MOSFET P-Channel
IRFT004
IRFT001
irfc9
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IRFT002
Abstract: irfc9024 IRFC9120 IRFT001 IRFC120 HEXFET Characteristics irfc024 60V Single N-Channel HEXFET Power MOSFET HEXFET Power MOSFET P-Channel
Text: INTERNATIONAL RECTIFIER bSE » • 4flS5MS2 G d l b t m 0T7 H I N R Preliminary Data Sheet No. PD-5.021D International S Rectifier HEXFET Power Module IRFT001 & IRFT002 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are
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IRFT001
IRFT002
irfc9024
IRFC9120
IRFT001
IRFC120
HEXFET Characteristics
irfc024
60V Single N-Channel HEXFET Power MOSFET
HEXFET Power MOSFET P-Channel
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TEN T A TIV E HN9C05FT T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L PLA N A R T Y PE H M Q f IRFT V H F - U H F B A N D L O W NO ISE A M P L IF IE R A PPLIC A TIO N S U n it in mm TWO devices are b u ilt in to th e super-thin and ultra super m ini
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HN9C05FT
2sc5261
2sc5091
IS21e12
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TSS1H44
Abstract: TSS1D44 SS1J4
Text: 9 0 9 7 2 5 0 TOSHIBA D IS C R E T E /O P T O 39G 02 373 D 7~ £ S - / 3 SSR (ZERO-CROSS TYPE) 3e] TOSHIBA -CDISCRETE/OPTO} TSS1J44 dF I tO ^SO 600V 1A O CHARACTERISTIC TSS1D44 Repetitive Peak TSS1G44 Off-state Voltage TSS1H44 T SS1J44 RMS On-state Current
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TSS1J44
0D0E373
TSS1D44
TSS1G44
TSS1H44
SS1J44
100i2
SS1J4
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A271
Abstract: TS902C2 ts902c UAX-11
Text: T S 9 0 2 C 2 ioa O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER .4.5±at 1.32 I 4 M'S4 T.7 • f t f i : Features • SB X tt » A JEDEC EIAJ Surface m ount device • 1&VF mm&m. Low V [.■ C o n n e c tio n D iagram Super high speed sw itching.
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TS902C2
A271
ts902c
UAX-11
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diodes for bridge rectifier
Abstract: No abstract text available
Text: © fc m Power Interface Products HEXFET POWER MODULES Standard and Custom International Rectifier’s Power Interface Products Group offers state of the art packaging of complete power functions for a wide range of applications. These multi-chip modules, designed to reduce the
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Untitled
Abstract: No abstract text available
Text: B U R R ^B R O W N 4 4 2 3 I ——-I PRECISION QUADRATURE OSCILLATOR CO CM FEATURES DESCRIPTION • SINE AND COSINE OUTPUTS T he M odel 4423 is a precision q u ad ratu re oscillator. It has tw o o u tp u ts 90 degrees o u t o f phase w ith each other, th u s providing sine an d cosine wave outputs
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20kHz
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS EPOXY CONFORMAL COATED MODEL MO. IRF-1 INDUCTORS Ttost Ind. MODELS IRF-t and IRF-3 Uniform Roll Coated FEATURES • Superior electrical specifications High Q & S R F , Low D C resistance, High rated D C current • Available in bulk, ammo and reel pack per E IA RS-296
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RS-296
10/ih
10/th
MIL-C-15305)
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1N5327
Abstract: 1N532 n 340 ad LT 83 ZENER 1N5j
Text: 1N6309 thru 1N6355 Microsemi Corp. SA S T A A S A , C A J-'or more information cali 7 ]4 | 9 7 9 -X 2 2 0 500 mW Glass Zener Diodes FEATURES • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • NIETALLURGICALLY BONDED (ABOVE 6.2 VOLTS
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1N6309
1N6355
MIL-S-19500/533
1N6336
1N6320-1N6336
1M6310
1N63H
1N63T5
1N5327
1N532
n 340 ad
LT 83 ZENER
1N5j
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wmm p8
Abstract: t930 AH20 ESAC92M-02
Text: E S A C 9 2 M - 2 i o a : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER : Features • fo m en t-? insulated package by fully molding. Low V]. wc Connection Diagram Super high speed switching. High reliability by planer design, • : Applications
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ESAC92M-02
SC-67
t95t/R89
Shl50
wmm p8
t930
AH20
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TS902C2
Abstract: No abstract text available
Text: T S 9 0 2 C 2 ioa K : O utlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER Features Surface m ount device •1&V K Low V [.• C o n n e c tio n D iagram Super high speed sw itching. • ttffiU Ji& A fl *St4 H igh reliability by planer design r ^
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TS902C2
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Untitled
Abstract: No abstract text available
Text: HIP5060 < X Ì HARRIS S E M I C O N D U C T O R Power Control 1C Single Chip Power Supply Features Description • Single Chip Current Mode Control 1C The HIP5060 is a complete power control IC, incorporating both the high power DMOS transistor, CMOS logic and low level analog circuitry on the
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HIP5060
HIP5060
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74 HTC 08
Abstract: 74 HTC 00 D786 74 TTL series
Text: I L C »ATA DEVICE CORP L.D Î>Ê| MbTflTbl 0 0 0 3 ^ 5 3 j p p 7 3 -^ 5“ BQ THA-05203 ILC DATA DEVICE CORPORATION HIGH SPEED TRACK/HOLD HYBRID •150 nsec Acquisition Time ± 0.005% Linearity Error . FEATURES • 150 NSEC ACQUISITION TIME DESCRIPTION The THA-05203 is a high speed, high
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THA-05203
THA-05203
IL-STD-202E,
THA-05203-100
MILSTD-883
MIL-STD-883.
D-7/86
74 HTC 08
74 HTC 00
D786
74 TTL series
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r9020
Abstract: 1RFR9020 1RFU9020 Diodo t b 9 g DIODO 42 40 028Q irfr9020 irf r9020 T372S FAG 50 diode
Text: international RECTIFIER " IN T E R N A T IO N A L r e c t i f i e r IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET* TRANSISTORS P -C H A N N E L -5 0 Volt, 0.20 Ohm HEXFET The HEXFET* technology to the keytoim em ettonel Rectaer'a edvanoed lloe o f power F/OSF6T traneialora. Tbo eWcient
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IRFR9020,
IRFR9022,
IRFU9020,
IRFU9022
T-37-25
IRFR9020TR
r9020
1RFR9020
1RFU9020
Diodo t b 9 g
DIODO 42 40
028Q
irfr9020
irf r9020
T372S
FAG 50 diode
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVERS IDT54/74FCT16245T/AT/CT IDT54/74FCT162245T/AT/CT Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • Common features: - 0.5 MICRON CEMOS Technology - High-speed, low-power CEMOS™ replacement for ABT functions
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16-BIT
IDT54/74FCT16245T/AT/CT
IDT54/74FCT162245T/AT/CT
74FCT162245T/AT/CT
16-bit
MIL-STD-883,
16245T
16245AT
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Untitled
Abstract: No abstract text available
Text: MOS M n f î - Ï Ü B & 'W MOS Field Effect Power Transistor 2SK1491 N MOS FET i i f 2SK1491 ! i , N - < , X -i -y f- > £ f l M OS F E T T * 9 , ¡ t î J U 'i & X 4 -y -f > m m VnM , : mm DC- D C 3 > ' < — ? iZ - M iiÊ 'V - i'o ft & o Vdss = 250 V, I D DC)= ±25 A
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2SK1491
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mPD16305
Abstract: TFK 082 PD16305GF-3L9 PD16305 uPD16305 228 PH PDI6305
Text: mos M O S In teg rated C ircuit w P D I 6 3 5 40 b' y h AC-PDP ¥=7 ^ ' < ^PD16305 ä, Ü ï Î l f C M O S y n - t X ÿ f f l u / j , ito 4 0 h '7 M M - / 7 ' 7 7 A C 7 '7 X - 7 - t '^ 7 V 'l’ ^ w u K 7 A '< (P D P ) f (Sift, fc’ J: îAiÜSÎÆ CMOS co K 7 -í
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uPD16305
PD16305CF
TB484gi
mPD16305
TFK 082
PD16305GF-3L9
PD16305
228 PH
PDI6305
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fci dh 22
Abstract: NJU9207F NJU9207 NJU9208 QFP80
Text: V£ Z X s s d Ä B Z I 0 2 I W 0 D 0 H 3 0 0 / d d d H a y H V V I l 1 1 1 I I I IJ- X 0 I a a a V V V m a ¿ ¿ I o 0 ß Q'S 9 rt n * s n o . ' d o ii ii -W w U ou U s y 2> Nc 5! 2o o: ü. 0103SI1Z n n n n n n n n n nnn nnnn nnn nnn nn n zz zz IZ OZ 61 81 ¿ I 91 SI t i £1 Zl U O I 6 8 ¿ 9 S t £ 3 T
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NJU9207/9208
NJU9207/08
NJU9208
NJU9207
QFP80
nju9207f
nju9207f
200mV
NJU9207/9208
DC200mV
fci dh 22
NJU9208
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MIL-STD-1050
Abstract: 200151
Text: M ic r o w a v e t e c h n o l o g y PERFORMANCE GRADING AND SCREENING OPTIONS FOR MwT GaAs FETS PERFORMANCE GRADINO Most MwT GaAs FET devices are available in two performance grades. This allows the circuit designer to match the RF performance required to the application in the most economical way. These grades are established using
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MH-STD-750
Mtfhod2076
MIL-STD-1050
200151
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it 6502e
Abstract: 6101E 6102E 6101-E
Text: TFDU6101E/TFDS6501E/TFDT6501E TFDU6102E/TFDS6502E/TFDT6502E Vishay Telefunken Fast Infrared Transceiver Module Family FIR, 4 Mbit/s for 2.6 V to 5.5 V Operation MEMBERI IrDA I Description T he T FD U 6101E , T FD S 6501E , T FD T 6501E , T FD U 6102E , T FD S 6502E , T FD T 6502E are a fam ily
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TFDU6101E/TFDS6501E/TFDT6501E
TFDU6102E/TFDS6502E/TFDT6502E
6101E
6501E
6102E
6502E
6502E
elef6501E
TFDU6102E/TFDS6502E/TFDT6502E_
it 6502e
6101E
6102E
6101-E
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