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    samsung

    Abstract: 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020
    Text: - f ± ft Vd s or ? Vd g t s £ tt « £ Vg s rTS fê Ta;:25°C Id * /CH Pd ft m. V g s th) Id s s Ig s s min * /CH (nA) Vg s (V) max Id Vd s (m a ) (V) Vd s = Vg s (V) (V) 4# te Id (oii) D s (o n ) Ciss g fs Coss Crss Vg s =0 (max) *typ Vg s ( 0 ) (V) Id


    OCR Scan     		PDF 18FS963Z O-220 IRFS9S33 1RFS9640 1RFS9641 1RFS964! 1RFS964 samsung 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020

    r9020

    Abstract: 1RFR9020 1RFU9020 Diodo t b 9 g DIODO 42 40 028Q irfr9020 irf r9020 T372S FAG 50 diode
    Text: international RECTIFIER " IN T E R N A T IO N A L r e c t i f i e r IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET* TRANSISTORS P -C H A N N E L -5 0 Volt, 0.20 Ohm HEXFET The HEXFET* technology to the keytoim em ettonel Rectaer'a edvanoed lloe o f power F/OSF6T traneialora. Tbo eWcient


    OCR Scan     		PDF IRFR9020, IRFR9022, IRFU9020, IRFU9022 T-37-25 IRFR9020TR r9020 1RFR9020 1RFU9020 Diodo t b 9 g DIODO 42 40 028Q irfr9020 irf r9020 T372S FAG 50 diode

    1rfz30

    Abstract: 1RFU220 irfu110 IRFU121 irfu310 IRFU020 IRFU111 IRFU120 IRFU210 IRFU212
    Text: - 266 - f ft A £ m € tt € Id Pd V Vd s Vg s or * /CH * /CH t Vdg K V IRFZ30 IRFZ32 1RFZ34 IR IR IR IR IR IR fR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR * + UPchiNc IRFU02O IRFUQ22 IRFUI10 IRFU111 IRFU120 IRFU121 ( RFU210


    OCR Scan     		PDF IRFU020 T0-251AA 1RFU022 O-251AA RFU310 1RFU32Ã 1RFU411 IRFU420 IRFU901Ã IRFU9012 1rfz30 1RFU220 irfu110 IRFU121 irfu310 IRFU111 IRFU120 IRFU210 IRFU212