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    IRFS9641 Search Results

    IRFS9641 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS9641 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS9641 Unknown FET Data Book Scan PDF
    IRFS9641 Samsung Electronics P-Channel Power MOSFET Scan PDF

    IRFS9641 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFS9640

    Abstract: IRFS9641
    Text: P-CHANNEL POWER MOSFETS IRFS9640/9641 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    IRFS9640/9641 IRFS9640 -200V IRFS9641 -150V O-220F -100V PDF

    samsung

    Abstract: 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020
    Text: - f ± ft Vd s or ? Vd g t s £ tt « £ Vg s rTS fê Ta;:25°C Id * /CH Pd ft m. V g s th) Id s s Ig s s min * /CH (nA) Vg s (V) max Id Vd s (m a ) (V) Vd s = Vg s (V) (V) 4# te Id (oii) D s (o n ) Ciss g fs Coss Crss Vg s =0 (max) *typ Vg s ( 0 ) (V) Id


    OCR Scan
    18FS963Z O-220 IRFS9S33 1RFS9640 1RFS9641 1RFS964! 1RFS964 samsung 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020 PDF

    IRFS9620

    Abstract: IRFS9522 SSS6N60 IRFS820
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00


    OCR Scan
    O-220 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 IRFS822 IRFS820 IRFS832 IRFS9620 IRFS9522 SSS6N60 PDF

    sss5N90

    Abstract: IRFS9Z34
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Continued B V dss (V) lo(on)(A) SSS3N 70 SSS4N 70 SSS5N 70 700 1.80 2.30 2.70 5.000 3.500 2.500 SSS3N 80 SSS4N 80 SSS5N 80 800 1.80 2.30 2.70 SSS2N 90 SSS3N 90 SSS4N 90 SSS5N 90 900 1.80 2.00 2.50 2.80


    OCR Scan
    O-220 IRFS9Z30 IRFS9531 IRFS9541 IRFS9Z34 IRFS9530 IRFS9540 IRFS9631 IRFS9641 sss5N90 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TlbMlMS Ü01BM2Q 5^6 ■ SMGK P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642/9643 FEATURES • • • • • • • TO-220F Lower RDs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    01BM2Q IRFS9640/9641 O-220F IRFS9640 IRFS9641 IRFS9642 IRFS9643 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan
    2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF

    IRFS1Z0

    Abstract: IRFS1Z3 irfb220 irfu310 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
    Text: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0


    OCR Scan
    1HFPG50 O-247AC T0-247AC RFU310 1RFU32Ã 1RFU411 IRFU420 IRFU901Ã IRFU9012 IRFU9020 IRFS1Z0 IRFS1Z3 irfb220 irfu310 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 PDF

    9643

    Abstract: 9642 FS9640
    Text: P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642Z9643 FEATURES • • • • • • * TO-220F Lower Rds on Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan
    IRFS9640/9641 /9642Z9643 O-220F FS9640/9641 /9642Z IRFS9640 IRFS9641 IRFS9642 IRFS9643 9643 9642 FS9640 PDF