IRFR9110
Abstract: irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227
Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power
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Original
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IRFR9110,
IRFU9110
IRFR9110
irfu9110
irfu9220
IRFR91109A
TA17541
TB334
TC227
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PDF
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irfu9220
Abstract: irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334
Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power
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Original
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IRFR9110,
IRFU9110
irfu9220
irfu9110
la 4001
IRFR9110
IRFR91109A
TA17541
TB334
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PDF
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RS507
Abstract: irfu9220 IRFR9110 IRFR91109A IRFU9110 TA17541 TB334 TC227
Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power
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Original
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IRFR9110,
IRFU9110
RS507
irfu9220
IRFR9110
IRFR91109A
IRFU9110
TA17541
TB334
TC227
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PDF
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IF9110
Abstract: IRFR9110 IRFR91109A IRFU9110 TA17541
Text: IRFU9110, IRFR9110 S E M I C O N D U C T O R 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Features Packaging JEDEC TO-251AA • 3.1A, 100V • rDS ON = 1.200Ω • Temperature Compensating PSPICE Model SOURCE DRAIN GATE
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Original
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IRFU9110,
IRFR9110
O-251AA
IRFU9110
IRFR9110
31e-10
1e-30
25e-4
03e-6)
IF9110
IRFR91109A
TA17541
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PDF
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IF9110
Abstract: IRFR9110 2-03E6 TA17541 irfu9110
Text: IRFU9110, IRFR9110 ¡31 H a r r i s mu S E M I C O N D U C T O R m “ * m w j mm mm m mw r m m w 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1 A, 100V SOURCE • r DS ON = 1 -2 0 0 i i
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OCR Scan
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IRFU9110,
IRFR9110
O-251AA
IRFU9110
IRFR9110
23e-14
74e-2
95e-3
30e-6
72e-10
IF9110
2-03E6
TA17541
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PDF
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s276
Abstract: fr9110 PLIC 9110
Text: & IRFU9110, IRFR9110 M A « 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D e ce m b e r 1995 Features Packaging JEDEC T O -251A A • 3.1 A, 100V • r DS ON = 1 -200i i • Temperature Compensating PSPICE Model DRAIN (FLANGE)
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OCR Scan
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IRFU9110,
IRFR9110
-251A
-200i
23e-14
74e-2
95e-3
30e-6
72e-10
45e-7)
s276
fr9110
PLIC
9110
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PDF
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IF9110
Abstract: No abstract text available
Text: & IRFU9110, IRFR9110 3.1 A, 100V, A valanche Rated, P-Channel E nhancem ent-M ode Pow er MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1A, 100V ■ r DS<ON SOURCE = 1-200Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
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OCR Scan
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IRFU9110,
IRFR9110
O-251AA
1-200Q
IRFU9110
IRFR9110
39e-4
87e-5)
31e-10
1e-30
IF9110
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PDF
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