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    IRFP440 Price and Stock

    Rochester Electronics LLC AUIRFP4409

    MOSFET N-CH 300V 38A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AUIRFP4409 Bulk 8,924 97
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    Rochester Electronics LLC IRFP440

    MOSFET N-CH 500V 8.8A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP440 Tube 1,892 101
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    Vishay Siliconix IRFP440

    MOSFET N-CH 500V 8.8A TO247-3
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    DigiKey IRFP440 Tube
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    Infineon Technologies AG AUIRFP4409

    MOSFET N-CH 300V 38A TO247AC
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    DigiKey AUIRFP4409 Tube
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    Avnet Americas AUIRFP4409 Tube 4 Weeks 116
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    Renesas Electronics Corporation IRFP440

    - Bulk (Alt: IRFP440)
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    Avnet Americas IRFP440 Bulk 4 Weeks 122
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    Find more IRFP440 price and stock on Findchips.com

    IRFP440 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP440 Fairchild Semiconductor 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Original PDF
    IRFP440 Intersil 8.8A, 500V, 0.850 ?, N-Channel Power MOSFET Original PDF
    IRFP440 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP440 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8.8A TO-247AC Original PDF
    IRFP440 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFP440 FCI POWER MOSFETs Scan PDF
    IRFP440 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRFP440 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 500V, 8.8A, Pkg Style TO-247AC Scan PDF
    IRFP440 International Rectifier Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.8A) Scan PDF
    IRFP440 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFP440 International Rectifier TO-247 N-Channel Plastic Package HEXFETs Scan PDF
    IRFP440 International Rectifier TO-247 HEXFET Power MOSFETs Scan PDF
    IRFP440 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP440 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP440 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP440 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFP440 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFP440 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFP440 Unknown FET Data Book Scan PDF
    IRFP440 National Semiconductor N-Channel Power MOSFETs Scan PDF

    IRFP440 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP P CHANNEL MOSFET

    Abstract: IRFP440B
    Text: IRFP440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFP440B IRFP P CHANNEL MOSFET IRFP440B

    Untitled

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFP440 Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements


    Original     		PDF IRFP440 0-85Q O-247 O-220 O-247 O-218 O-247AC

    irfp440

    Abstract: No abstract text available
    Text: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 11 Qgd (nC) 30 Configuration • Repetitive Avalanche Rated 0.85 • Isolated Central Mounting Hole


    Original     		PDF IRFP440, SiHFP440 O-247 O-247 O-220 12-Mar-07 irfp440

    Untitled

    Abstract: No abstract text available
    Text: PD - 95198 IRFP440PbF • Lead-Free Document Number: 91228 4/27/04 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228


    Original     		PDF IRFP440PbF O-247AC IRFPE30

    IRFP440B

    Abstract: IRFP 260 M
    Text: IRFP440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFP440B IRFP440B IRFP 260 M

    Untitled

    Abstract: No abstract text available
    Text: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 63 Qgs (nC) 11 Qgd (nC) 30 Configuration Single TO-247AC RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP440, SiHFP440 2002/95/EC O-247AC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFP440_RC, SiHFP440_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFP440 SiHFP440 AN609, 18-Jun-10

    IRFP440

    Abstract: SiHFP440
    Text: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 63 Qgs (nC) 11 Qgd (nC) 30 Configuration Single TO-247AC RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP440, SiHFP440 O-247AC O-220AB O-247AC O-218 11-Mar-11 IRFP440

    Untitled

    Abstract: No abstract text available
    Text: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 63 Qgs (nC) 11 Qgd (nC) 30 Configuration Single TO-247AC RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP440, SiHFP440 O-247AC O-220AB O-247AC O-218 2002/95/EC. 2002/95/EC 2011/65/EU.

    HA1190

    Abstract: No abstract text available
    Text: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP440A HA1190

    IRFP440

    Abstract: RA3A
    Text: PD-9.457C International ï^R Rectifier IRFP440 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements 500 V V DSS =


    OCR Scan     		PDF IRFP440 O-247 O-220 O-218 IRFP440 RA3A

    Untitled

    Abstract: No abstract text available
    Text: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00


    OCR Scan     		PDF IRFP440A G03b332 0G3b333

    Untitled

    Abstract: No abstract text available
    Text: IRFP440/441 V-CHANNEL MER MOSFETS / FEATURES • Low er R d s i o n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input ca p acita nce • Extended safe operating area • Improved high tem perature reliability


    OCR Scan     		PDF IRFP440/441 IRFP440 IRFP441

    Untitled

    Abstract: No abstract text available
    Text: International ja g Rectifier HEXFET Power MOSFET • • • • • • 4 fl5 5 4 S 2 PD-9.457C INR QD1SS2L 334 IRFP440 INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRFP440 O-247 O-220 46554S2

    ir 441 c

    Abstract: 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442
    Text: IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 /442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Low er R d s ON Im proved ind u ctive ru g g ed n ess F ast sw itch in g tim es R u g ged p olysilicon g a te ce ll structure Low er in p u t ca p a c ita n c e


    OCR Scan     		PDF IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 O-220 IRF840/IRFP440/IRF440 IRF841 /IRFP441 /IRF441 IRF842/IRFP442/IRF442 IRF843/IRFP443/IRF443 ir 441 c 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442

    IRFP440R

    Abstract: cd3232 IRFP441R IRFP442R IRFP443R ir441
    Text: Rugged Power M OSFETs_ IRFP440R, IRFP441R, IRFP442R, IRFP443R File Number 2089 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0 .8 5 0 and 1 .1 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■


    OCR Scan     		PDF IRFP440R, IRFP441R, IRFP442R, IRFP443R 00V-400V 92CS-426S0 IRFP442R IRFP443R IRFP440R cd3232 IRFP441R ir441

    IRFP440

    Abstract: IRFP441 PED relay TA17425 bonding TO-247 IRFP442
    Text: i H A R R IRFP440, IRFP441, IRFP442 IRFP443 i s s e m i c o n d u c t o r 7.7 k and 8.8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7.7A and 8.8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFP440, IRFP441, IRFP442 IRFP443 IRFP440 IRFP441 PED relay TA17425 bonding TO-247

    IRFP440

    Abstract: No abstract text available
    Text: PD-9.457C International S«r Rectifier IRFP440 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description DATA SHEETS


    OCR Scan     		PDF IRFP440 0-85Q O-247 T0-220 O-218

    Untitled

    Abstract: No abstract text available
    Text: • 43 0E2 71 0 0 54 23 0 Ob? ■ HAS ¡2 HARRIS IRFP440R, IRFP441R IRFP442R, IRFP443R N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Package Features TO-247 TOP VIEW • 7.7A and 8.8A, 400V - 500V • ros on = 0.851"! and 1.1 SI • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRFP440R, IRFP441R IRFP442R, IRFP443R O-247 IRFP441R, IRFP443R

    Untitled

    Abstract: No abstract text available
    Text: Advanced IRFP440A P o w e r MOSFEJT FEATURES B ^D S S - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 8.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ V DS = 500V


    OCR Scan     		PDF IRFP440A

    T0204AA

    Abstract: No abstract text available
    Text: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150


    OCR Scan     		PDF IRF640 IRF641 IRF642 IRF643 IRF340 IRFP340 IRF341 IRFP341 O-220 T0204AA

    Untitled

    Abstract: No abstract text available
    Text: IRFP440 S e m iconductor Data Sheet July 1999 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRFP440 O-247

    Untitled

    Abstract: No abstract text available
    Text: IRFP440A Advanced Power MOSFET FEATURES - 500 V ^D S o n = 0 .8 5 Q B ^D S S Rugged G ate O xide T e ch n o lo g y a ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a 00 cn ♦ II ♦ A va la n ch e Rugged T e ch n o lo g y


    OCR Scan     		PDF IRFP440A

    R027F

    Abstract: No abstract text available
    Text: IRFP440A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 500V


    OCR Scan     		PDF IRFP440A IRFP44 TRFP440A R027F