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    IRFP430

    Abstract: IRF830.831
    Text: IRF830/831/832/833 IRFP430/431/432/433 N-CHANNEL POWER MOSFETS FEATURES TO -220 • L o w e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRF830/831/832/833 IRFP430/431/432/433 IRF830/IRFP430 IRF831 IRFP431 IRF832 IRFP432 F833IR IRFP430 IRF830.831

    IRF830

    Abstract: IRFP430 rectifier 832 IRF833 IRF831 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832
    Text: SAMSUNG ELECTRONICS INC b7E ]> • IRF830/831Z832/833 IRFP430/431Z432/433 T T b M m e DD17317 37T ■ SP16K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s F ast sw itch ing tim es R ug ged po lysilicon g a te cell stru ctu re


    OCR Scan     		PDF IRF830/831/832/833 IRFP430/431Z432/433 b414e IRF830/IRFP430 IRF831 /IRFP431 IRF832/IRFP432 IRF833/IRFP433 IRF830 IRFP430 rectifier 832 IRF833 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832