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    IRF830

    Abstract: IRFP430 rectifier 832 IRF833 IRF831 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832
    Text: SAMSUNG ELECTRONICS INC b7E ]> • IRF830/831Z832/833 IRFP430/431Z432/433 T T b M m e DD17317 37T ■ SP16K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s F ast sw itch ing tim es R ug ged po lysilicon g a te cell stru ctu re


    OCR Scan     		PDF IRF830/831/832/833 IRFP430/431Z432/433 b414e IRF830/IRFP430 IRF831 /IRFP431 IRF832/IRFP432 IRF833/IRFP433 IRF830 IRFP430 rectifier 832 IRF833 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832

    LH28F008SC

    Abstract: wbae
    Text: PRODUCT PREVIEW LH28F008SC 8-MBIT 1 MB x 8 SmartVoltage F la s h F ile MEMORY • SmartVoltage Technology — 3.3V or 5V Vcc — 3.3V, 5V, or 12V VPP ■ High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Erasable Blocks ■ High-Performance


    OCR Scan     		PDF LH28F008SC 40-Lead 44-Lead 64-Kbyte 120ns --150ns wbae