TA9295
Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
Text: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRFP250
TB334
O-247
TA9295
irfp250 applications
IRFP250
TB334
transistor IRFP250
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IRFP250
Abstract: irfp250 applications irfp250 mosfet IRFP250 m
Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED • ■
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IRFP250
O-247
IRFP250
irfp250 applications
irfp250 mosfet
IRFP250 m
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IRFP250
Abstract: irfp250 applications
Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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IRFP250
O-247
IRFP250
irfp250 applications
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IRFP250
Abstract: irfp250 applications irfp250 mosfet NOR gate
Text: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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IRFP250
O-247
IRFP250
irfp250 applications
irfp250 mosfet
NOR gate
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IRFP250 application
Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
Text: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP250
TA9295.
IRFP250 application
irfp250 application note
datasheet irfp250 mosfet
IRFP250
irfp250 applications
TA9295
TB334
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transistor IRFP250
Abstract: No abstract text available
Text: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP250
TB334
transistor IRFP250
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irfp250 applications pulse transformer
Abstract: irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFP250,
SiHFP250
O-247
O-220
18-Jul-08
irfp250 applications pulse transformer
irfp250 DRIVER
irfp250
IRFP250 application
irfp250 applications
MOSFET IRFp250
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP250 application
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP250 application
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP250
Abstract: irfp250 applications IRFP250PBF
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFP250,
SiHFP250
O-247
O-220
IRFP250
irfp250 applications
IRFP250PBF
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irfp250 application note
Abstract: irfp250 DRIVER
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
11-Mar-11
irfp250 application note
irfp250 DRIVER
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFP250,
SiHFP250
O-247
O-220
12-Mar-07
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IRFP250
Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
Text: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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IRFP250,
IRFP251,
IRFP252,
IRFP253
IRFP253
75BVdss
IRFP250
irfp250 mosfet
mosfet irfp 250 pin out
MOSFET IRFp250
irfp250 applications
IRFP251
IRFP252
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Untitled
Abstract: No abstract text available
Text: IRFP250 Semiconductor Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 33A, 200V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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PDF
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IRFP250
O-247
085i2
TB334
TA9295.
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irfp250
Abstract: 443D irfp250 mosfet
Text: PD-9.443D International S Rectifier IRFP250 HEXFET Power M OSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -0 8 5 Q
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PDF
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IRFP250
O-247
T0-220
O-218
irfp250
443D
irfp250 mosfet
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IRFP250
Abstract: irfp250 DRIVER irfp250 mosfet T-39-15 irfp250 applications pulse transformer IRFP253 irfp250 applications IRFP250 international rectifier IRFP251 IRFP252
Text: HE D I 4flS5MSa 0000750 2 | Data Sheet No. PD-9.443B INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP250 IRFP251 I N-CHANNEL IRFP252 IRFP253 Product Summary 200 Volt, 0.085 Ohm HEXFET TO-247AC TO-3P Plastic Package
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4fl554S5
O-247AC
C-505
IRFP250,
IRFP251,
IRFP252,
IRFP253
T-39-15
C-506
IRFP250
irfp250 DRIVER
irfp250 mosfet
T-39-15
irfp250 applications pulse transformer
irfp250 applications
IRFP250 international rectifier
IRFP251
IRFP252
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IRFP250
Abstract: Diode marking WW1 diode ww1 05 443D MOSFET IRFp250
Text: PD-9.443D International K Rectifier IRFP250 HEXFET® P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^DSS ~ 2 0 0 V
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OCR Scan
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PDF
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IRFP250
O-247
T0-220
O-218
Diode marking WW1
diode ww1 05
443D
MOSFET IRFp250
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irfp250m
Abstract: IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511
Text: ?“R Rectifier IRFP250 HEXFET Power M O S FE T • • • • • • I N T E R NA T I O NA L RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss bSE
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OCR Scan
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PDF
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IRFP250
O-247
T0-220
O-218
50Ktl
irfp250m
IRFP250 m
IRFP250 international rectifier
IRFP250
MOSFET IRFp250
TYN 30A
TEA+1511
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Untitled
Abstract: No abstract text available
Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient
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PDF
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IRFP250
O-247
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IRFP250
Abstract: No abstract text available
Text: H a IRFP250, IRFP251, IRFP252, IRFP253 r r i s ” “ I CONDUCTOE 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150 V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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PDF
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IRFP250,
IRFP251,
IRFP252,
IRFP253
TA929252,
RFP252,
IRFP250
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Untitled
Abstract: No abstract text available
Text: □IXYS Standard Power MOSFET IRFP250 vD SS = 200 V = 30 A = 85 mfl cont p DS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T, = 25°C to 150°C 200 V v DQR T, = 25°C to 150-C; R GS = 1 M ii 200 V Continuous ±20 V Transient
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PDF
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IRFP250
150-C;
O-247
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Untitled
Abstract: No abstract text available
Text: H a r r IRFP250, IRFP251, IRFP252, IRFP253 i s s e m i c o n d u c t o r 27 A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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PDF
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IRFP250,
IRFP251,
IRFP252,
IRFP253
gatFP250,
RFP252,
RFP253
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