sd55a
Abstract: No abstract text available
Text: International leg Rectifier PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive PDS on Specified at VGs = 5 0 V & 10V
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IRLI2203G
52ACD
10-02Tan
0316Tel:
sd55a
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DI 944
Abstract: 942 rectifier diode
Text: Mi 4ÛS54S2 0 0 1 5 MbO b l l M I N R Rectifier IRFP140 HEXFET Power MOSFET • • • • • • • PD-9.442C INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature
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4flss452
IRFP140
O-247
O-220
O-218
DI 944
942 rectifier diode
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1224B international I@R Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET
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1224B
IRHM7360SE
400Volt,
4A5S452
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Untitled
Abstract: No abstract text available
Text: P D - 9.681 A bitemational KgLRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC20U
O-220AB
TQ-220AB
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s1bc
Abstract: EC120 ELNE FS18C
Text: INTERNATIONAL RECTIFIER 05 DE~| 4ÛSS45E DODTbDT 7 | I IÇ?K 1i n t e r n a t i o n a l , r e c t i f i e r T-25-19 Data Sheet No. PD-3.121 S18C & S18CH SERIES 1200-600 VOLTS RANGE 165 AMP RMS, CENTER AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS
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T-25-19
S18CH
O-209AC
209AC
208AD
s1bc
EC120
ELNE
FS18C
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