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    IRFIBF30GPBF Search Results

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    IRFIBF30GPBF Price and Stock

    Vishay Siliconix IRFIBF30GPBF

    MOSFET N-CH 900V 1.9A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIBF30GPBF Tube 898 1
    • 1 $3.48
    • 10 $3.48
    • 100 $2.3634
    • 1000 $1.79881
    • 10000 $1.625
    Buy Now
    ComSIT USA IRFIBF30GPBF 150
    • 1 -
    • 10 -
    • 100 -
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    Vishay Intertechnologies IRFIBF30GPBF

    MOSFET N-CHANNEL 900V - Tape and Reel (Alt: IRFIBF30GPBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFIBF30GPBF Reel 12 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.2295
    • 10000 $1.846
    Buy Now
    Mouser Electronics IRFIBF30GPBF 1,481
    • 1 $3.48
    • 10 $2.93
    • 100 $2.14
    • 1000 $1.73
    • 10000 $1.69
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    Newark IRFIBF30GPBF Bulk 1,000
    • 1 -
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    RS IRFIBF30GPBF Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.07
    • 10000 $1.97
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    TTI IRFIBF30GPBF Tube 500 50
    • 1 -
    • 10 -
    • 100 $2.14
    • 1000 $1.71
    • 10000 $1.63
    Buy Now
    TME IRFIBF30GPBF 1
    • 1 $1.53
    • 10 $1.22
    • 100 $1.1
    • 1000 $1.02
    • 10000 $1.02
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    Avnet Asia IRFIBF30GPBF 14 Weeks 1,000
    • 1 -
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    EBV Elektronik IRFIBF30GPBF 13 Weeks 50
    • 1 -
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    New Advantage Corporation IRFIBF30GPBF 750 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.21
    • 10000 $1.21
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    IRFIBF30GPBF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFIBF30GPBF International Rectifier 900V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package Original PDF
    IRFIBF30GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 1.9A TO220FP Original PDF

    IRFIBF30GPBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free 12/9/03 Document Number: 91186 www.vishay.com 1 IRFIBF30GPbF Document Number: 91186 www.vishay.com 2 IRFIBF30GPbF Document Number: 91186 www.vishay.com 3 IRFIBF30GPbF Document Number: 91186 www.vishay.com 4 IRFIBF30GPbF


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    PDF IRFIBF30GPbF O-220 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free 1 IRFIBF30GPbF 2 IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2


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    PDF IRFIBF30GPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free www.irf.com 1 12/9/03 IRFIBF30GPbF 2 www.irf.com IRFIBF30GPbF www.irf.com 3 IRFIBF30GPbF 4 www.irf.com IRFIBF30GPbF www.irf.com 5 IRFIBF30GPbF 6 www.irf.com IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original
    PDF IRFIBF30GPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free www.irf.com 1 12/9/03 IRFIBF30GPbF 2 www.irf.com IRFIBF30GPbF www.irf.com 3 IRFIBF30GPbF 4 www.irf.com IRFIBF30GPbF www.irf.com 5 IRFIBF30GPbF 6 www.irf.com IRFIBF30GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original
    PDF IRFIBF30GPbF O-220

    91186

    Abstract: No abstract text available
    Text: PD - 94874 IRFIBF30GPbF • Lead-Free 12/9/03 Document Number: 91186 www.vishay.com 1 IRFIBF30GPbF Document Number: 91186 www.vishay.com 2 IRFIBF30GPbF Document Number: 91186 www.vishay.com 3 IRFIBF30GPbF Document Number: 91186 www.vishay.com 4 IRFIBF30GPbF


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    PDF IRFIBF30GPbF O-220 12-Mar-07 91186

    IRFIBF30GPBF

    Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


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    PDF IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original
    PDF IRFIBF30G, SiHFIBF30G O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original
    PDF IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


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    PDF IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


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    PDF IRFIBF30G, SiHFIBF30G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRFIBF30GPBF

    Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original
    PDF IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3

    IRFIBF30G

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original
    PDF IRFIBF30G, SiHFIBF30G O-220 12-Mar-07 IRFIBF30G