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    IRFI830G Search Results

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    IRFI830G Price and Stock

    Vishay Siliconix IRFI830GPBF

    MOSFET N-CH 500V 3.1A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI830GPBF Tube 781 1
    • 1 $2.06
    • 10 $1.403
    • 100 $2.06
    • 1000 $0.81948
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    Bristol Electronics IRFI830GPBF 100
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    Quest Components IRFI830GPBF 80
    • 1 $2.31
    • 10 $2.31
    • 100 $1.155
    • 1000 $1.155
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    Vishay Siliconix IRFI830G

    MOSFET N-CH 500V 3.1A TO220-3
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    DigiKey IRFI830G Tube
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    Vishay Intertechnologies IRFI830G

    MOSFET N-CHANNEL 500V - Tape and Reel (Alt: IRFI830G)
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    Avnet Americas IRFI830G Reel 1,000
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    Vishay Intertechnologies IRFI830GPBF

    MOSFET N-CHANNEL 500V - Bulk (Alt: IRFI830GPBF)
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    Avnet Americas IRFI830GPBF Bulk 1,000
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    • 1000 $0.71166
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    Verical IRFI830GPBF 400 400
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    Arrow Electronics IRFI830GPBF 400 12 Weeks 400
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    • 1000 $0.6716
    • 10000 $0.6716
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    Newark IRFI830GPBF Bulk 1,344 1
    • 1 $1.35
    • 10 $1.15
    • 100 $0.969
    • 1000 $0.969
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    TME IRFI830GPBF 196 1
    • 1 $1.16
    • 10 $0.98
    • 100 $0.82
    • 1000 $0.71
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    Chip1Stop IRFI830GPBF 709
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    • 100 $1.51
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    IRFI830GPBF 400
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    • 100 $0.862
    • 1000 $0.622
    • 10000 $0.622
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    EBV Elektronik IRFI830GPBF 5,200 13 Weeks 50
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    IBS Electronics IRFI830GPBF 50
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    • 100 $1.212
    • 1000 $1.212
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    New Advantage Corporation IRFI830GPBF 4,150 1
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    • 1000 $1.02
    • 10000 $0.9403
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    Vishay Semiconductors IRFI830GPBF

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    Onlinecomponents.com IRFI830GPBF 709
    • 1 $2.12
    • 10 $2.12
    • 100 $1.28
    • 1000 $0.82
    • 10000 $0.73
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    Find more IRFI830G price and stock on Findchips.com

    IRFI830G Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFI830G International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI830G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI830G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3.1A TO220FP Original PDF
    IRFI830G International Rectifier Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) Scan PDF
    IRFI830G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFI830G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFI830G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFI830GPBF International Rectifier 500V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220FullPAK package Original PDF
    IRFI830GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3.1A TO220FP Original PDF

    IRFI830G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiHFI830G

    Abstract: IRFI830G SiHFI830G-E3
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 11-Mar-11 IRFI830G SiHFI830G-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 94847 IRFI830GPbF • Lead-Free www.irf.com 1 11/17/03 IRFI830GPbF 2 www.irf.com IRFI830GPbF www.irf.com 3 IRFI830GPbF 4 www.irf.com IRFI830GPbF www.irf.com 5 IRFI830GPbF 6 www.irf.com IRFI830GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFI830GPbF O-220

    SiHFI830G

    Abstract: No abstract text available
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 94847 IRFI830GPbF • Lead-Free Document Number: 91159 11/17/03 www.vishay.com 1 IRFI830GPbF Document Number: 91159 www.vishay.com 2 IRFI830GPbF Document Number: 91159 www.vishay.com 3 IRFI830GPbF Document Number: 91159 www.vishay.com 4 IRFI830GPbF Document Number: 91159


    Original     		PDF IRFI830GPbF O-220 08-Mar-07

    AN609

    Abstract: IRFI830G SiHFI830G
    Text: IRFI830G_RC, SiHFI830G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFI830G SiHFI830G AN609, 11-May-10 AN609

    SiHFI830G

    Abstract: No abstract text available
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiHFI830G

    Abstract: IRFI830G SiHFI830G-E3
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 18-Jul-08 IRFI830G SiHFI830G-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 94847 IRFI830GPbF • Lead-Free Document Number: 91159 11/17/03 www.vishay.com 1 IRFI830GPbF Document Number: 91159 www.vishay.com 2 IRFI830GPbF Document Number: 91159 www.vishay.com 3 IRFI830GPbF Document Number: 91159 www.vishay.com 4 IRFI830GPbF Document Number: 91159


    Original     		PDF IRFI830GPbF O-220 12-Mar-07

    SiHFI830G

    Abstract: No abstract text available
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 12-Mar-07

    IRFI830G

    Abstract: SiHFI830G SiHFI830G-E3
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 18-Jul-08 IRFI830G SiHFI830G-E3

    SiHFI830G

    Abstract: No abstract text available
    Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		PDF IRFI830G, SiHFI830G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFI830G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)3.1 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100# IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)35 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFI830G

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


    Original     		PDF IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R

    irf510 switch

    Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
    Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.


    Original     		PDF O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    Untitled

    Abstract: No abstract text available
    Text: International e ?r R ectifier HEXFET P o w e r M O S F E T • • • • • 4655452 0015175 b^O H I N R PD-9.646A IRFI830G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating


    OCR Scan     		PDF IRFI830G O-220 4S55452 1RFI830G

    IRFI830G

    Abstract: S203A
    Text: PD-9.646A International E Rectifier IRFI830G HEXFET® Power MOSFET • • • • • Isolated Package High Voltage isolation= 2.5KVRMS ® Sink to Lead Creepage Dist,= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^D S S ~ 5 0 0 V ^DS on = 1 - 5 ß


    OCR Scan     		PDF IRFI830G O-220 S203A

    TC250C

    Abstract: IRFI830G E16Q
    Text: International S Rectifier PD-9.646A IRFI830G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V Ds s = 5 0 0 V ^DS on = 1 l D = 3.1 A


    OCR Scan     		PDF IRFI830G O-220 staRFI830G TC250C IRFI830G E16Q