IRFD9024
Abstract: No abstract text available
Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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IRFD9024,
SiHFD9024
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFD9024
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Untitled
Abstract: No abstract text available
Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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IRFD9024,
SiHFD9024
2002/95/EC
11-Mar-11
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irfd9024
Abstract: SiHFD9024
Text: SiHFD9024, IRFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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SiHFD9024
IRFD9024
18-Jul-08
irfd9024
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IRFD9024
Abstract: SiHFD9024
Text: SiHFD9024, IRFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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SiHFD9024
IRFD9024
18-Jul-08
IRFD9024
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AN609
Abstract: IRFD9024
Text: IRFD9024_RC, SiHFD9024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFD9024
SiHFD9024
AN609,
0426m
8968m
4501m
6212m
26-Oct-10
AN609
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IRFD9024
Abstract: No abstract text available
Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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Original
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PDF
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IRFD9024,
SiHFD9024
2002/95/EC
18-Jul-08
IRFD9024
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irfd9024
Abstract: SiHFD9024
Text: SiHFD9024, IRFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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Original
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PDF
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SiHFD9024
IRFD9024
12-Mar-07
irfd9024
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IRFD9024
Abstract: No abstract text available
Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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Original
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PDF
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IRFD9024,
SiHFD9024
2002/95/EC
11-Mar-11
IRFD9024
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Untitled
Abstract: No abstract text available
Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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Original
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PDF
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IRFD9024,
SiHFD9024
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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Original
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IRFD9024,
SiHFD9024
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
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Original
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IRFD9024,
SiHFD9024
2002/95/EC
18-Jul-08
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