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    IRFBE Price and Stock

    Vishay Siliconix IRFBE30PBF-BE3

    MOSFET N-CH 800V 4.1A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE30PBF-BE3 Tube 2,706 1
    • 1 $2.37
    • 10 $2.37
    • 100 $2.37
    • 1000 $0.90712
    • 10000 $0.90712
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    Vishay Siliconix IRFBE20PBF

    MOSFET N-CH 800V 1.8A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE20PBF Tube 1,596 1
    • 1 $2.28
    • 10 $2.28
    • 100 $2.28
    • 1000 $0.73224
    • 10000 $0.63362
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    Bristol Electronics IRFBE20PBF 44 2
    • 1 -
    • 10 $2.25
    • 100 $1.875
    • 1000 $1.875
    • 10000 $1.875
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    Quest Components IRFBE20PBF 35
    • 1 $4
    • 10 $2.5
    • 100 $1.5
    • 1000 $1.5
    • 10000 $1.5
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    New Advantage Corporation IRFBE20PBF 14,350 1
    • 1 -
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    • 100 -
    • 1000 $0.65
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    Vishay Siliconix IRFBE30LPBF

    MOSFET N-CH 800V 4.1A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE30LPBF Tube 989 1
    • 1 $3.53
    • 10 $3.53
    • 100 $3.53
    • 1000 $1.21621
    • 10000 $1.15
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    Vishay Siliconix IRFBE30STRLPBF

    MOSFET N-CH 800V 4.1A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE30STRLPBF Digi-Reel 800 1
    • 1 $3.51
    • 10 $2.948
    • 100 $3.51
    • 1000 $3.51
    • 10000 $3.51
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    IRFBE30STRLPBF Cut Tape 800 1
    • 1 $3.51
    • 10 $2.948
    • 100 $3.51
    • 1000 $3.51
    • 10000 $3.51
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    IRFBE30STRLPBF Reel 800 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.8032
    • 10000 $1.60625
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    Bristol Electronics IRFBE30STRLPBF 575
    • 1 -
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    Vishay Siliconix IRFBE30

    MOSFET N-CH 800V 4.1A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE30 Tube
    • 1 -
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    Find more IRFBE price and stock on Findchips.com

    IRFBE Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFBE20 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBE20 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-220AB Original PDF
    IRFBE20 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRFBE20 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRFBE20 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFBE20 International Rectifier Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) Scan PDF
    IRFBE20 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFBE20 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFBE20L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-262 Original PDF
    IRFBE20PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFBE20PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-220AB Original PDF
    IRFBE20PBF Vishay Semiconductors MOSFET N-CH 800V 1.8A TO-220AB Scan PDF
    IRFBE20PBF-BE3 Vishay Siliconix MOSFET N-CH 800V 1.8A TO220AB Original PDF
    IRFBE20STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A D2PAK Original PDF
    IRFBE20STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A D2PAK Original PDF
    IRFBE22 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRFBE22 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRFBE30 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBE30 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-220AB Original PDF
    IRFBE30 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF

    IRFBE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30

    P-Channel MOSFET 800v

    Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
    Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original     		PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode

    94945

    Abstract: No abstract text available
    Text: PD - 94945 IRFBE30PbF • Lead-Free Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118


    Original     		PDF IRFBE30PbF O-220AB 12-Mar-07 94945

    Untitled

    Abstract: No abstract text available
    Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original     		PDF IRFBE30S IRFBE30L O-262 08-Mar-07

    9014 transistor specification

    Abstract: AN609 IRFBE20 SiHFBE20
    Text: IRFBE20_RC, SiHFBE20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBE20 SiHFBE20 AN609, 20-Apr-10 9014 transistor specification AN609

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBE30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-220AB IRFBE30

    diode IR 132 E

    Abstract: DIODE NU
    Text: PD - 95630 IRFBE20PbF • Lead-Free www.irf.com 1 8/4/04 IRFBE20PbF 2 www.irf.com IRFBE20PbF www.irf.com 3 IRFBE20PbF 4 www.irf.com IRFBE20PbF www.irf.com 5 IRFBE20PbF 6 www.irf.com IRFBE20PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations


    Original     		PDF IRFBE20PbF O-220AB. O-220AB diode IR 132 E DIODE NU

    IRFBE30

    Abstract: SiHFBE30 SiHFBE30-E3 irfbe30pbf
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE30 SiHFBE30-E3 irfbe30pbf

    s8143

    Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3
    Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration


    Original     		PDF IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3

    IRFBE20

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFBE20, SiHFBE20 O-220 12-Mar-07 IRFBE20

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling


    Original     		PDF IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling


    Original     		PDF IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)4.1 I(DM) Max. (A) Pulsed I(D)2.6 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFBE30

    Untitled

    Abstract: No abstract text available
    Text: IRFBE22 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)6.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)


    Original     		PDF IRFBE22

    400VID

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBE20 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-220AB IRFBE20 400VID

    Untitled

    Abstract: No abstract text available
    Text: PD - 94945 IRFBE30PbF • Lead-Free Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118


    Original     		PDF IRFBE30PbF O-220AB 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 95630 IRFBE20PbF • Lead-Free Document Number: 91117 8/4/04 www.vishay.com 1 IRFBE20PbF Document Number: 91117 www.vishay.com 2 IRFBE20PbF Document Number: 91117 www.vishay.com 3 IRFBE20PbF Document Number: 91117 www.vishay.com 4 IRFBE20PbF Document Number: 91117


    Original     		PDF IRFBE20PbF 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    AN609

    Abstract: IRFBE30L IRFBE30S SiHFBE30S
    Text: IRFBE30S_RC, SiHFBE30S_RC, IRFBE30L_RC, SiHFBE30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFBE30S SiHFBE30S IRFBE30L SiHFBE30L AN609, 20-Apr-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    diode BYY 62

    Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode
    Text: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r


    OCR Scan     		PDF IRFBE20 O-220 diode BYY 62 MOSFET 800V 10A to 220 3l IRFBE20 BYY diode