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    Free-Tool-Download-EZ-0005-EZ-0006 Renesas Electronics Corporation EZ-0005, EZ-0006 Evaluation Boards Visit Renesas Electronics Corporation
    CYD18S18V18-167BBAXC Rochester Electronics LLC 1MX18 DUAL-PORT SRAM, PBGA256, 17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256 Visit Rochester Electronics LLC Buy
    CYD36S36V18-167BGXI Rochester Electronics 1MX36 DUAL-PORT SRAM, 4ns, PBGA484, 27 X 27 MM, 2.33 MM HEIGHT, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-484 Visit Rochester Electronics Buy
    NBSG53AMNG Rochester Electronics LLC 53 SERIES, LOW SKEW CLOCK DRIVER, 1 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), QCC16, 3 X 3 MM, LEAD FREE, QFN-16 Visit Rochester Electronics LLC Buy
    CY7B991V-5JXI Rochester Electronics LLC PLL Based Clock Driver, 7B Series, 4 True Output(s), 0 Inverted Output(s), PQCC32, LEAD FREE, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy

    IRFBC40 FREE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFBC40

    Abstract: SiHFBC40 37AB irfbc40 free SiHFBC40-E3
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 O-220 O-220 18-Jul-08 IRFBC40 37AB irfbc40 free SiHFBC40-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    INTERNATIONAL RECTIFIER IRFBC40

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 O-220 O-220 12-Mar-07 INTERNATIONAL RECTIFIER IRFBC40

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    37AB

    Abstract: IRFBC40 SiHFBC40 SiHFBC40-E3
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB O-220AB 11-Mar-11 37AB IRFBC40 SiHFBC40-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRFBC40L

    Abstract: IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S
    Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)


    Original     		PDF IRFBC40S, SiHFBC40S IRFBC40L, SiHFBC40L IRFBC40L IRFBC40S SiHFBC40L-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)


    Original     		PDF IRFBC40S, SiHFBC40S IRFBC40L, SiHFBC40L

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)


    Original     		PDF IRFBC40S, SiHFBC40S IRFBC40L, SiHFBC40L

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)


    Original     		PDF IRFBC40S, SiHFBC40S IRFBC40L, SiHFBC40L

    S2186

    Abstract: SCOP 200-002 IRs2186 application note
    Text: IRS2186 4 (S)PBF High and Low Side Driver Features •            Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 V to 20 V


    Original     		PDF IRS2186 S2186 SCOP 200-002 IRs2186 application note

    IR2106 APPLICATION NOTE

    Abstract: ir2106pbf ir2106s datasheet IRFBC30 IR2106 IR21064 IR21064S IR2106S IRFBC20 IRFBC40
    Text: Data Sheet No. PD60162 Rev. W IR2106 4 (S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60162 IR2106 IR2106) 14-Lead 2106/2301//2108//2109/2302/2304Feature IR2106 IR2106 APPLICATION NOTE ir2106pbf ir2106s datasheet IRFBC30 IR21064 IR21064S IR2106S IRFBC20 IRFBC40

    IR2106 APPLICATION NOTE

    Abstract: IR2106S
    Text: Data Sheet No. PD60162 Rev. W IR2106 4 (S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60162 IR2106 IR2106) 14-Lead 2106/2301//2108//2109/2302/2304Feature IR2106 IR2106S IR2106 APPLICATION NOTE

    irfbc

    Abstract: IRFBC40STRLPBF
    Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)


    Original     		PDF IRFBC40S, SiHFBC40S IRFBC40L, SiHFBC40L irfbc IRFBC40STRLPBF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60161-R IR2108 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V


    Original     		PDF PD60161-R IR2108 14-Lead IR21084S IR2108S IR21084 IR2108 540ns

    IR2108

    Abstract: IR21084 mosfet te 2304 IR21084S IR2108S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60161-R
    Text: Data Sheet No. PD60161-R IR2108 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V


    Original     		PDF PD60161-R IR2108 14-Lead IR21084S IR2108S IR21084 IR2108 540ns IR21084 mosfet te 2304 IR21084S IR2108S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60161-R

    IR2109 application note

    Abstract: IR21094 IR21094 application note IR2109 application IR2109 IRFBC30 IR21094S IR2109S IRFBC20 IRFBC40
    Text: Data Sheet No. PD60163-U IR2109 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60163-U IR2109 540ns IR21094) IR2109 IR2109S 14-Lead IR21094 SOICIR21094S IR2109 application note IR21094 IR21094 application note IR2109 application IRFBC30 IR21094S IR2109S IRFBC20 IRFBC40

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60163-U IR2109 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60163-U IR2109 540ns IR21094) IR2109 IR2109S 14-Lead IR21094 SOICIR21094S

    IRFBC30

    Abstract: OC140 IRFBC40 IRFPE50 IRS2181 IRS21814 IRS2181S IRFBC20
    Text: Data Sheet No. PD60262 IRS2181/IRS21814 S PbF HIGH AND LOW SIDE DRIVER Packages Features • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune


    Original     		PDF PD60262 IRS2181/IRS21814 IRS2181 14-Lead IRS21814 IRS2181S 114-Lead IRS21814S IRS2181PbF IRFBC30 OC140 IRFBC40 IRFPE50 IRS2181 IRS21814 IRS2181S IRFBC20