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    Vishay Siliconix SIHFBC40AS-GE3

    MOSFET N-CHANNEL 600V
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    DigiKey SIHFBC40AS-GE3 Tube 983 1
    • 1 $1.77
    • 10 $1.137
    • 100 $0.7777
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    Vishay Intertechnologies SIHFBC40AS-GE3

    MOSFET N-CHANNEL 600V (Alt: SIHFBC40AS-GE3)
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    Avnet Americas SIHFBC40AS-GE3 13 Weeks 1,000
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    Mouser Electronics SIHFBC40AS-GE3
    • 1 $1.74
    • 10 $1.41
    • 100 $1.13
    • 1000 $0.806
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    Newark SIHFBC40AS-GE3 Bulk 1,000
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    TTI SIHFBC40AS-GE3 Reel 1,000
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    Vishay Intertechnologies SIHFBC40STRL-GE3

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    Bristol Electronics SIHFBC40STRL-GE3 553
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    Vishay Intertechnologies SIHFBC40L-GE3

    Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHFBC40L-GE3 1
    • 1 $1.74
    • 10 $1.56
    • 100 $1.24
    • 1000 $1.16
    • 10000 $1.16
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    SIHFBC40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    MAR 740 MOSFET TRANSISTOR

    Abstract: D 1402
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR D 1402

    MAR 740 MOSFET TRANSISTOR

    Abstract: P 648 H
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR P 648 H

    AN609

    Abstract: IRFBC40A SiHFBC40A 9043-2
    Text: IRFBC40A_RC, SiHFBC40A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBC40A SiHFBC40A AN609, 20-Apr-10 AN609 9043-2

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original     		PDF IRFBC40AS, SiHFBC40AS 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 V RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220


    Original     		PDF IRFBC40LC, SiHFBC40LC O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRFBC40LC, SiHFBC40LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFBC40L

    Abstract: IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S
    Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)


    Original     		PDF IRFBC40S, SiHFBC40S IRFBC40L, SiHFBC40L IRFBC40L IRFBC40S SiHFBC40L-E3

    IRFBC20S

    Abstract: IRFBC40L IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S SiHFBC40S-E3
    Text: IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC40S/SiHFBC40S) 600 RDS(on) (Ω) VGS = 10 V RoHS* • Available in Tape and Reel (IRFBC20S, COMPLIANT Qg (Max.) (nC) 60 Qgs (nC)


    Original     		PDF IRFBC40S, IRFBC40L, SiHFBC40S SiHFBC40L IRFBC40S/SiHFBC40S) IRFBC20S, SiHFBC20S O-262) IRFBC20S IRFBC40L IRFBC40S SiHFBC40L-E3 SiHFBC40S-E3

    AN609

    Abstract: IRFBC40AS SiHFBC40AS
    Text: IRFBC40AS_RC, SiHFBC40AS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFBC40AS SiHFBC40AS AN609, 20-Apr-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: IRFBC40L IRFBC40S SiHFBC40L SiHFBC40S
    Text: IRFBC40S_RC, SiHFBC40S_RC, IRFBC40L_RC, SiHFBC40L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFBC40S SiHFBC40S IRFBC40L SiHFBC40L AN609, 20-April-10 AN609

    IRFBC40

    Abstract: IRFBC40L IRFBC40S SiHFBC40 SiHFBC40L SiHFBC40L-E3 SiHFBC40S SiHFBC40S-E3
    Text: IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S) • Dynamic dV/dt Rating


    Original     		PDF IRFBC40S, IRFBC40L, SiHFBC40S SiHFBC40L IRFBC40 IRFBC40L IRFBC40S SiHFBC40 SiHFBC40L-E3 SiHFBC40S-E3

    AN609

    Abstract: IRFBC40 SiHFBC40
    Text: IRFBC40_RC, SiHFBC40_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBC40 SiHFBC40 AN609, 20-Apr-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRFBC40LC, SiHFBC40LC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    smps transformer Design using irfbc40a

    Abstract: IRFBC40AS SiHFBC40AS SiHFBC40AS-E3
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 18-Jul-08 smps transformer Design using irfbc40a IRFBC40AS SiHFBC40AS-E3

    IRFBC40

    Abstract: SiHFBC40 37AB irfbc40 free SiHFBC40-E3
    Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements


    Original     		PDF IRFBC40, SiHFBC40 O-220 O-220 18-Jul-08 IRFBC40 37AB irfbc40 free SiHFBC40-E3

    IRFBC40LC

    Abstract: SiHFBC40LC-E3 SiHFBC40LC
    Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 V RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220


    Original     		PDF IRFBC40LC, SiHFBC40LC O-220 18-Jul-08 IRFBC40LC SiHFBC40LC-E3

    irfbc

    Abstract: IRFBC40STRLPBF
    Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)


    Original     		PDF IRFBC40S, SiHFBC40S IRFBC40L, SiHFBC40L irfbc IRFBC40STRLPBF

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRFBC40LC, SiHFBC40LC 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC40AS, SiHFBC40AS O-263) 12-Mar-07