irf 739 mosfet
Abstract: TRANSISTOR S 838 2F 1 marking 400V Single N-Channel HEXFET Power MOSFET IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET 10a IRFB9N65A 12A 650V MOSFET 13A 650V MOSFET 400V voltage regulator
Text: PD - 91815A IRFB9N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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1815A
IRFB9N65A
O-220AB
irf 739 mosfet
TRANSISTOR S 838
2F 1 marking
400V Single N-Channel HEXFET Power MOSFET
IRF P CHANNEL MOSFET 100v
IRF P CHANNEL MOSFET 10a
IRFB9N65A
12A 650V MOSFET
13A 650V MOSFET
400V voltage regulator
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IRFB9N65A
Abstract: IRFIB5N65A
Text: PD - 91815C IRFB9N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS(on) max ID 0.93Ω 8.5A 650V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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91815C
IRFB9N65A
O-220AB
12-Mar-07
IRFB9N65A
IRFIB5N65A
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IRFIB5N65A
Abstract: IRFB9N65A 91815C
Text: PD - 91815C IRFB9N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS(on) max ID 0.93Ω 8.5A 650V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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91815C
IRFB9N65A
O-220AB
O252-7105
IRFIB5N65A
IRFB9N65A
91815C
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IRFIB5N65A
Abstract: No abstract text available
Text: PD - 91815C IRFB9N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS(on) max ID 0.93Ω 8.5A 650V Benefits Low Gate Charge Qg results in Simple Drive Requirement
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91815C
IRFB9N65A
O-220AB
08-Mar-07
IRFIB5N65A
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
11-Mar-11
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IRFB9N65A
Abstract: SiHFB9N65A SiHFB9N65A-E3 SiHFIB5N65A IRFB9N65
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
11-Mar-11
IRFB9N65A
SiHFB9N65A-E3
SiHFIB5N65A
IRFB9N65
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s-81243
Abstract: SiHFIB5N65A
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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IRFB9N65A,
SiHFB9N65A
O-220
O-220
IRFB9N65APbFmerchantability,
12-Mar-07
s-81243
SiHFIB5N65A
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IRFB9N65
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFB9N65
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFB9N65A applications
Abstract: IRFB9N65A SiHFIB5N65A SiHFB9N65A SiHFB9N65A-E3 smps power
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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IRFB9N65A,
SiHFB9N65A
O-220
18-Jul-08
IRFB9N65A applications
IRFB9N65A
SiHFIB5N65A
SiHFB9N65A-E3
smps power
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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IRFB9N65A
Abstract: 52a21 ISR9246
Text: PD -91815A International 3BR Rectifier IRFB9N65A s m p s m o s fe t HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching VDss Rds(on) max Id 0.93Q 8.5A 650V Benefits • Low Gate Charge Qg results in Simple
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-91815A
IRFB9N65A
IRFB9N65A
52a21
ISR9246
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Untitled
Abstract: No abstract text available
Text: PD -91815A International lö R Rectifier sMPs MosFET IR F B 9 N 6 5 A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 650V Rds(on) max 0.93Î2 Id 8.5 A Benefits
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-91815A
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