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    IRF842 V Search Results

    IRF842 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM2917MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917N-8/NOPB Texas Instruments Frequency to Voltage Converter 8-PDIP -40 to 85 Visit Texas Instruments Buy

    IRF842 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF840

    Abstract: IRF842 IRF843 IRF840 HARRIS IRF841 irf840 power supply TA17425 TB334 IRF842 V IRF840 MOSFET
    Text: IRF840, IRF841, IRF842, IRF843 S E M I C O N D U C T O R 7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF840, IRF841, IRF842, IRF843 IRF840 IRF842 IRF843 IRF840 HARRIS IRF841 irf840 power supply TA17425 TB334 IRF842 V IRF840 MOSFET

    IRF840

    Abstract: irf840 power supply IRF842 IRF841 IRF843 Application of irf840 irf84 55TT mosfet 3205 IRF342
    Text: Standard Power MOSFETs - IRF840, IRF841, IRF842, IRF843 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL ENHA N C EM EN T MODE 7 A and 8 A, 450 V - 500 V


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    PDF IRF840, IRF841, IRF842, IRF843 IRF843 IRF84 IRF840 irf840 power supply IRF842 IRF841 Application of irf840 irf84 55TT mosfet 3205 IRF342

    irf840

    Abstract: IRF841
    Text: iH A R R is SEMIC0NDUCT0R IRF840, IRF841, IRF842, IRF843 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF840, IRF841, IRF842, IRF843 irf840 IRF841

    DIODE cd c318

    Abstract: Application of irf840 inverter irf840 K 2611 MOSFET IRF840 application Switching Application of irf840 C322 diode SWB45 ST C318 IRF841
    Text: HE 0 I M Ô 5 54 5 5 INTERNATIONAL aCIOöSbä 2 | Data Sheet No. PD-9.376G RECTIFIER - { 3 INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED* IRF840 IRF841 IRF842 IRF843 HEXFET TRANSISTORS N-CHANNEL Product Summary 500 Volt, 0.85 Ohm HEXFET


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    PDF Mfl55455 IRF841 O-220AB C-324 DIODE cd c318 Application of irf840 inverter irf840 K 2611 MOSFET IRF840 application Switching Application of irf840 C322 diode SWB45 ST C318 IRF841

    TO-204AE

    Abstract: No abstract text available
    Text: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600


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    PDF IRFP441 IRF442 IRF443 IRF840 IRF841 IRF842 IRF843 2N6763 2N6764 IRF150 TO-204AE

    irf 1962

    Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843
    Text: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,


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    PDF IRF840 IRF841 IRF842 IRF843 irf 1962 irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843

    D 843 Transistor

    Abstract: TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843
    Text: rZ7 SGS-THOMSON ^7# 0 M »IIU iraM O g S IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S(on IRF840 IRF840FI 500 V 500 V 0.85 fi 0.85 fi IRF841 IRF841FI 450 V 450 V 0.85 fi 0.85 0 IRF842 IRF842FI 500 V


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    PDF 840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843

    D 843 Transistor

    Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
    Text: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842


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    PDF 840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor 843FI e IRF 840 Application of irf840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840

    D 843 Transistor

    Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
    Text: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843


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    PDF 840/FI-841 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv

    TRANSISTOR mosfet IRF840

    Abstract: IRF840 irf8408 IRF841 3fc relay transistor irf840 Application of irf840 damn IRF842 D 843 Transistor
    Text: MOTOROLA SC XSTRS/R IM E F D I b3b?254 □ O ô T ? Q ci T - MOTOROLA IRF840 IRF841 IRF842 IRF843 • SEM ICO NDUCTOR TECHNICAL DATA P a rt N u m b e r N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h v o lta g e , h ig h


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    PDF IRF840 IRF841 IRF842 IRF843 O-220) IRF841. TRANSISTOR mosfet IRF840 irf8408 3fc relay transistor irf840 Application of irf840 damn D 843 Transistor

    equivalent irf840

    Abstract: 2SK173 2N6658 BUZ44 vn0106n1 VN64GA BUZ 840 VN0104N4 VN0106N5 IRF232
    Text: Silico n ix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60


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    PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 equivalent irf840 2SK173 2N6658 BUZ44 vn0106n1 VN64GA BUZ 840 VN0104N4 VN0106N5 IRF232

    VN64GA

    Abstract: irf840 TD4A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 VNP002A
    Text: Ü Ü A C D ^ U / C D M i v i a D r/\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BVqss Volts 450-500 TO-3 TO-220 Siliconix


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    PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 VN64GA TD4A IRF340 IRF350 IRF740 VNP002A

    VN64GA

    Abstract: 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 IRF152
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35


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    PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 IRF152

    IRF440

    Abstract: IRF450 irf420 IRF340 IRF350 IRF740 IRF820 IRF840 VNP002A
    Text: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220


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    PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 irf420 IRF340 IRF350 IRF740 VNP002A

    RF840

    Abstract: IRF840 Harris irf840r
    Text: • 4302571 ODS40 7 3 HARRIS b^O ■ HAS IRF840/841/842/843 IRF840R/841R/Q42R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO -220A B TO P VIEW • 7A and 8A, 450V - 500V • ros on = 0.85H and 1.1ft • Single Pulse Avalanche Energy Rated*


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    PDF ODS40 IRF840/841/842/843 IRF840R/841R/Q42R/843R -220A IRF840, IRF841, IRF842, IRF843 IRF840R, IRF841R, RF840 IRF840 Harris irf840r

    IRF840

    Abstract: high voltage pulse with irf840 IRF841 IRF840-3 RISE TIME OF IRF840 MOSFETS IRF840 n-channel mosfet IRF840 MOSFETs IRF843 IRF842
    Text: N-CHANNEL POWER MOSFETS IRF840/841/842/843 FEATURES • • • • • • • Lower R ds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRF840/841/842/843 IRF840 IRF841 IRF842 IRF843 high voltage pulse with irf840 IRF840-3 RISE TIME OF IRF840 MOSFETS IRF840 n-channel mosfet IRF840 MOSFETs

    IRF842

    Abstract: IRF843
    Text: IRF842.843 F U 7 AM PERES 500, 450 VOLTS RDS ON * 1.1 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


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    PDF IRF842 00A//isec, 250uA. IRF843

    ir 441 c

    Abstract: 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442
    Text: IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 /442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Low er R d s ON Im proved ind u ctive ru g g ed n ess F ast sw itch in g tim es R u g ged p olysilicon g a te ce ll structure Low er in p u t ca p a c ita n c e


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    PDF IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 O-220 IRF840/IRFP440/IRF440 IRF841 /IRFP441 /IRF441 IRF842/IRFP442/IRF442 IRF843/IRFP443/IRF443 ir 441 c 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442

    irf4424

    Abstract: VN67AF cross reference irf840 equivalent 2SJ54 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNM
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j


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    PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf4424 VN67AF cross reference irf840 equivalent 2SJ54 IVN6200CNM

    irf840

    Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j


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    PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf840 equivalent irf840 irf840 equivalent irf840 rf MTM3N55

    irf8408

    Abstract: IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441
    Text: m a a FAIRCHILD c 'i i_ r- i —n - A4 SEMICONDUCTOR DE 1 3 4 t . T t . 7 4 0027^25 IRF440-443/IRF840-843 M TM7N45/7N50 N-Channel Power MOSFETs, 8 A, 450 V /50 0 V F A IR C H IL D A Schlumberger Company Power And Discrete Division _ -Description


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    PDF IRF440-443/IRF840-843 MTM7N45/7N50 T-39-11 IRF440 IRF441 IRF442 IRF443 MTM7N45 MTM7N50 O-220AB irf8408 IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


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    PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    P4N70

    Abstract: IRF840 irf830 ssp3n70a IRF822 SSP4N70A SSP6N60 3N70 IRF843 IRF842
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 N-CHANNEL Continued B Vdss (V) ID(onXA) 450.00 2.20 2.50 4.00 4.50 7.00 8.00 4.00 3.00 2.00 1.50 1.10 0.85 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 500.00 2.20 2.50 4.00 4.00 3.00 2.00 IRF822 IRF820 IRF832 4.50 7.00 8.00


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    PDF O-220 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 IRF822 IRF820 IRF832 P4N70 IRF840 irf830 ssp3n70a SSP4N70A SSP6N60 3N70 IRF842

    MTP3N80

    Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


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    PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60