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    IRF840 MOSFETS Search Results

    IRF840 MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    IRF840 MOSFETS Price and Stock

    General Transistor Corp IRF840

    MOSFET - N-Channel – Vdss 500V – Id 8A - Drive voltage 10 V – Vgs 4 V - Power dissipation 125 W –TO 220AB - Through hole - 3 pins
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRF840 1,778
    • 1 $11.55
    • 10 $6.67
    • 100 $2.08
    • 1000 $2.08
    • 10000 $2.08
    		Buy Now

    IRF840 MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Application of irf840

    Abstract: irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334
    Text: IRF840 Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRF840 NOTE: PACKAGE TO-220AB 2312.3 Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF840 O-220AB Application of irf840 irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN


    Original     		PDF O-220 IRF840 O-220

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN


    Original     		PDF O-220 IRF840 O-220

    Application of irf840

    Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
    Text: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF840 TA17425. Application of irf840 TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Application of irf840

    Abstract: irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840 SiHF840-E3 Switching Application of irf840
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 O-220 O-220 18-Jul-08 Application of irf840 irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840-E3 Switching Application of irf840

    IRF840PBF

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF840PBF

    TRANSISTOR mosfet IRF840

    Abstract: IRF840 application note Switching Application of irf840
    Text: IRF840 Data Sheet Title F84 bt A, 0V, 50 m, 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF840 TRANSISTOR mosfet IRF840 IRF840 application note Switching Application of irf840

    IRF840PBF

    Abstract: IRF840 irf840 mosfet drive International Rectifier IRF840
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 O-220 O-220 12-Mar-07 IRF840PBF IRF840 irf840 mosfet drive International Rectifier IRF840

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Application of irf840

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Application of irf840

    TA17425

    Abstract: No abstract text available
    Text: IRF840 Semiconductor Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8 A ,5 0 0 V Ordering Information IRF840 NOTE: TO-220AB • r DS ON = 0 .8 5 0 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    OCR Scan     		PDF IRF840 O-220AB TB334 TA17425. TA17425

    IRF840

    Abstract: IRF840 MOSFET 250M IRF841 power MOSFET IRF840 DS400
    Text: N-CHANNEL POWER MOSFETS IRF840/841 FEATURES TO-220 • Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF840/841 IRF840 IRF841 G02fl24G IRF840 MOSFET 250M power MOSFET IRF840 DS400

    IRF840

    Abstract: high voltage pulse with irf840 IRF841 IRF840-3 RISE TIME OF IRF840 MOSFETS IRF840 n-channel mosfet IRF840 MOSFETs IRF843 IRF842
    Text: N-CHANNEL POWER MOSFETS IRF840/841/842/843 FEATURES • • • • • • • Lower R ds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF840/841/842/843 IRF840 IRF841 IRF842 IRF843 high voltage pulse with irf840 IRF840-3 RISE TIME OF IRF840 MOSFETS IRF840 n-channel mosfet IRF840 MOSFETs

    TO-204AE

    Abstract: No abstract text available
    Text: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600


    OCR Scan     		PDF IRFP441 IRF442 IRF443 IRF840 IRF841 IRF842 IRF843 2N6763 2N6764 IRF150 TO-204AE

    irf840

    Abstract: IRF841
    Text: iH A R R is SEMIC0NDUCT0R IRF840, IRF841, IRF842, IRF843 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF840, IRF841, IRF842, IRF843 irf840 IRF841

    IRF840

    Abstract: irf840 power supply IRF842 IRF841 IRF843 Application of irf840 irf84 55TT mosfet 3205 IRF342
    Text: Standard Power MOSFETs - IRF840, IRF841, IRF842, IRF843 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL ENHA N C EM EN T MODE 7 A and 8 A, 450 V - 500 V


    OCR Scan     		PDF IRF840, IRF841, IRF842, IRF843 IRF843 IRF84 IRF840 irf840 power supply IRF842 IRF841 Application of irf840 irf84 55TT mosfet 3205 IRF342

    irf8408

    Abstract: IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441
    Text: m a a FAIRCHILD c 'i i_ r- i —n - A4 SEMICONDUCTOR DE 1 3 4 t . T t . 7 4 0027^25 IRF440-443/IRF840-843 M TM7N45/7N50 N-Channel Power MOSFETs, 8 A, 450 V /50 0 V F A IR C H IL D A Schlumberger Company Power And Discrete Division _ -Description


    OCR Scan     		PDF IRF440-443/IRF840-843 MTM7N45/7N50 T-39-11 IRF440 IRF441 IRF442 IRF443 MTM7N45 MTM7N50 O-220AB irf8408 IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441

    RF840

    Abstract: IRF840 Harris irf840r
    Text: • 4302571 ODS40 7 3 HARRIS b^O ■ HAS IRF840/841/842/843 IRF840R/841R/Q42R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO -220A B TO P VIEW • 7A and 8A, 450V - 500V • ros on = 0.85H and 1.1ft • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF ODS40 IRF840/841/842/843 IRF840R/841R/Q42R/843R -220A IRF840, IRF841, IRF842, IRF843 IRF840R, IRF841R, RF840 IRF840 Harris irf840r

    Diode LT 442

    Abstract: Diode LT 443 IRFP441 IRFP440 ir 441 c IRFP443
    Text: IRF840/841/842/843 IRFP440/441/442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru g g e d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended sa le operating area


    OCR Scan     		PDF IRF840/841/842/843 IRFP440/441/442/443 O-220 IRFP441 IRF840 IRFP440 IRF841 Diode LT 442 Diode LT 443 ir 441 c IRFP443