power supply IRF830 APPLICATION
Abstract: power MOSFET IRF830 irf830 datasheet IRF830
Text: DC COMPONENTS CO., LTD. IRF830 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 1.5 Ohms ID = 4.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements
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IRF830
O-220AB
power supply IRF830 APPLICATION
power MOSFET IRF830
irf830 datasheet
IRF830
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transistor irf830
Abstract: power supply IRF830 APPLICATION IRF830 PHP3N60 PHP4N50 PHP6N50E IRF8301
Text: Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated IRF830 FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance d VDSS = 500 V
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IRF830
O220AB)
IRF830
transistor irf830
power supply IRF830 APPLICATION
PHP3N60
PHP4N50
PHP6N50E
IRF8301
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MTM4N45
Abstract: fet irf830 MTP4N45 IRF830
Text: IRF830 Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http://onsemi.com
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IRF830
r14525
IRF830/D
MTM4N45
fet irf830
MTP4N45
IRF830
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fet irf830
Abstract: MTM4N45
Text: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds
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IRF830
IRF830/D
fet irf830
MTM4N45
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12G471K
Abstract: 10D-11 ntc 10D-11 10D-11 NTC 12v ballast ic electronic ballast for multiplier fluorescent lam E1619 dimming ballast control IC t3 electronic ballast ELECTRONIC BALLAST 12v
Text: KA7522/D DIMMING BALLAST CONTROL IC BALLAST CONTROL IC 22 DIP The KA7522 is a electronic ballast controller for fluorescent inverter systems. It contains whole function in KA7521, current feed back and preheating time controlled by temperature sensing. FEATURES
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KA7522/D
KA7522
KA7521,
KA7522
KA7522D
4700pF
KSP44
IRF830
12G471K
10D-11
ntc 10D-11
10D-11 NTC
12v ballast ic
electronic ballast for multiplier fluorescent lam
E1619
dimming ballast control IC
t3 electronic ballast
ELECTRONIC BALLAST 12v
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irp833
Abstract: JRF830 IRF830 3203 MOSFET IRF833 IRF832 IRF831 RF832 mosfet jrf830 F832
Text: - Standard Pow er M O SFETs IRF830, IRF831, IRF832, IRF833 File N u m b e r 1582 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE
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IRF830,
IRF831,
IRF832,
IRF833
50V-500V
IRF832
IRF833
RF832
irp833
JRF830
IRF830
3203 MOSFET
IRF831
RF832
mosfet jrf830
F832
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IRF830
Abstract: IRF 450 MOSFET IRF831 LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF830 IRF831 IRF832 IRF833 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid
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OCR Scan
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IRF830
IRF831
IRF832
IRF833
IRF831.
IRF 450 MOSFET
LG diode 831
transistor irf830
TRANSISTOR mosfet IRF830
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IRF830.831
Abstract: Irf830
Text: N-CHANNEL POWER MÛSFETS IRF830/831 FEATURES • • • • • • • Lower R ds On Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF830/831
IRF830
IRF831
IRF830.831
Irf830
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MSAFX14N100A
Abstract: MSAFX13N110A FSN0450
Text: N-Channel MOSFETs Part Number Microsemi Division PPC, Inc. Sertech Lab PPC, Inc. Sertech Lab Sertech Lab Santa Ana Sertech Lab Santa Ana MSAEZ15N40A Santa Ana MSAFZ15N40A Sertech Lab FSE2040 Sertech Lab FSN0450 PPC, Inc. IRF830 Sertech Lab FSF0850 Sertech Lab
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IRF720
FSN0540
IRF730
FSF1040
FSF1340
MSAER14N40A
FSE1540
MSAEZ15N40A
MSAFZ15N40A
FSE2040
MSAFX14N100A
MSAFX13N110A
FSN0450
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RF830
Abstract: No abstract text available
Text: International gäg Rectifier 1 HEXFET Power M O S F E T INTERNATIONAL RECTIFIER 4Ö55452 D01476B G3Ö _ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PD-9.311K INR IRF830 bSE I> ^ dss - 500V
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PDF
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D01476B
IRF830
RF830
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IRF830
Abstract: No abstract text available
Text: IRF830 Iß ANSYS Power Field Effect Tïansistor aiCTRomcs LIMITED N-Channel Enhancement Mode • Silicon Gate for Fast Switching Speeds • Low R d s oii to Minimize On-Losses, Specified at Elevated Temperature • Rugged — SO A is Power Dissipation Limited
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IRF830
IRF830
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IRFP430
Abstract: IRF830.831
Text: IRF830/831/832/833 IRFP430/431/432/433 N-CHANNEL POWER MOSFETS FEATURES TO -220 • L o w e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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IRF830/831/832/833
IRFP430/431/432/433
IRF830/IRFP430
IRF831
IRFP431
IRF832
IRFP432
F833IR
IRFP430
IRF830.831
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IRF833
Abstract: IRF832 1RF831 30010 IRF830 IRF831 w sa 45a diode
Text: 3875081 G E SOLID STATE 01 Standard Power M O S FE T s DE 1 3Û7SQÔ1 QDlfl37‘ì S I D - - IRF830, IRF831, IRF832, IRF833 File Number 1582 Power MOS Field-Effect Transistors N -CH A NN EL EN H A N C E M E N T M ODE
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lfl37c!
T-39-
IRF830,
IRF831,
IRF832,
IRF833
50V-500V
IRF832
IRF833
1RF831
30010
IRF830
IRF831
w sa 45a diode
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Untitled
Abstract: No abstract text available
Text: • M3D5E71 00S40LÖ EB3 ■ HAS IRF830/Q31/832/833 IRF830R/831R/832R/833R gì HARRIS N-Channel Power M O SFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B T O P VIEW • 4.0A and 4.5A, 450V - 500V • rDS °n = 1-5ii and 2 .0 0 • Single Pulse Avalanche Energy Rated*
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M3D5E71
00S40LÃ
IRF830/Q31/832/833
IRF830R/831R/832R/833R
IRF830,
IRF831,
IRF832,
IRF833
IRF830R,
IRF831R,
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IRF830
Abstract: IRFP430 rectifier 832 IRF833 IRF831 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832
Text: SAMSUNG ELECTRONICS INC b7E ]> • IRF830/831Z832/833 IRFP430/431Z432/433 T T b M m e DD17317 37T ■ SP16K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s F ast sw itch ing tim es R ug ged po lysilicon g a te cell stru ctu re
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IRF830/831/832/833
IRFP430/431Z432/433
b414e
IRF830/IRFP430
IRF831
/IRFP431
IRF832/IRFP432
IRF833/IRFP433
IRF830
IRFP430
rectifier 832
IRF833
IRF832
IRFP431
IRF830.831
irfp4303
diode on 832
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Untitled
Abstract: No abstract text available
Text: HE D I MassMsa oooflstio a | Data Sheet No. PD-9.311J T-39-11 INTERNATIONAL R E C T IF IE R IN T E R N A T IO N A L R E C T IF IE R I O R I REPETITIVE AVALANCHE AND dv/dt RATED* IRF830 IRF831 IRF832 IRF833 HEXFET TRANSISTORS Q r X N -C H A N N E L 500 Volt, 1.5 Ohm HEXFET
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T-39-11
IRF830
IRF831
IRF832
IRF833
O-220AB
C-315
IRF830,
IRF831,
IRF832,
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC f X S T F S / R F . bflF J> • b3b72S4 00^0440 00Ö ■ M O T b MOTOROLA ■ SEM IC O N D U C T O R TECHNICAL DATA IRF830 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for high
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b3b72S4
IRF830
Sy20AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
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1rf830
Abstract: VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
1rf830
VN64GA
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
IRF142
IRF150
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1rf830
Abstract: ibf830 IRF8301 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450
Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350
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IRF450
IRF452
IRF440
IRF442
VNP002A*
VN5001A
IRF430
VN5002A
IRF432
IRF420
1rf830
ibf830
IRF8301
IRF420
IRF422
IRF430
IRF432
IRF440
IRF442
IRF450
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D84 TRANSISTOR
Abstract: IRF830 RF830 j01 relay
Text: IRF830,831 D84DR2,R1 FUT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. 4.5 AMPERES 500, 450 VOLTS
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IRF830
P84DR2
100ns
TC-25Â
100IT
831/D84
530/CS4
D84 TRANSISTOR
RF830
j01 relay
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IRF830 equivalent
Abstract: IRF9520 equivalent 10A ibf830 1rf830 IRF450 equivalent IRF9523 IRF9613 IRF9130 IRF9131 IRF9133
Text: 1-15 MOSPOWER Cross Reference Ust CO o> *1 I I ! Í I ! !! I ! [ I I I ! I I I I I I U I I I I I ¡I i II I I I i i II ¡ ¡ I II I i I ¡ N I I I M M I I I I I I I I II II I 0 2 . CO >% â % «é J d o c 2 <1) a> ID A ra I I I I l I I I I I I I I II I I
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IRF9130
IRF9130*
IRF9131
IRF9131
IRF9132
IRF9132
IRF9133
IRF9133
IRF9230
IRF9231
IRF830 equivalent
IRF9520 equivalent 10A
ibf830
1rf830
IRF450 equivalent
IRF9523
IRF9613
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1rf830
Abstract: IRF9612 IRF830 IRF432 IRF9130 IRF9523 IRF9532 irf9620 IRF9532 equivalent IRF9132
Text: 1-15 MOSPOWER Cross Reference Ust CO GO o> *1 I I ! Í I ! !! I ! [ I I I ! I I I I I I U I I I I I ¡I i II I I I i i II ¡ ¡ I II I i I ¡ N I I I M M I I I I I I I I II II I 0 2 . CO >% â % «é J d o c 2 <1) a> ID A ra I I I Il I I I I I I I I II I I
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OCR Scan
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PDF
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IRF9130
IRF9130*
IRF9131
IRF9131
IRF9132
IRF9132
IRF9133
IRF9133
IRF9230
IRF9231
1rf830
IRF9612
IRF830
IRF432
IRF9523
IRF9532
irf9620
IRF9532 equivalent
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1rf830
Abstract: 5002A VN64GA ibf830 IRF432 IRF340 IRF350 IRF440 IRF450 IRF740
Text: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ /\r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide * 2 0 0 ° C RATING I i Packages: u BV qss Volts 450-500 TO-3 TO-220
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to-220
to-39
to-237
to-92
to-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
1rf830
5002A
VN64GA
ibf830
IRF432
IRF340
IRF350
IRF740
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1rf830
Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
Text: MICRO ELECTRONICS CORP ITE D • I bGTlîflû OOOOTTO 2 £77 'm i Æ XÿSlf}- ¡ Il T -2 V U 1RF830 1RF831 IRF832 IRF833 \j; ggg p « * ik i m V ÎI HIGH POWER MOSFETs P*itNuirb«r VDS APPLICATIONS I ’ PR E L IM IN A R Y • SWITCHING REGULATORS • MOTOR DRIVERS
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1RF830
1RF831
IRF832
IRF833
IRFS30
IRF631
IRFS32
IRF833
LG diode 831
IRF830.831
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