irf630
Abstract: rf1s630sm9a IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power
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IRF630,
RF1S630SM
IRF63
O220AB
O263AB
RF1S630SM
irf630
rf1s630sm9a
IRF630 Fairchild
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IRF632 datasheet
Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF630,
RF1S630SM
TA17412.
IRF632 datasheet
IRF630 datasheet
IRF630
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 mosfet
IRF630 Fairchild
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TA17412
Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF630,
RF1S630SM
TA17412.
1578f
TA17412
irf630
irf630 equivalent
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 p
IRF630 INTERSIL
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tektronix 576 curve tracer
Abstract: tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944
Text: Application Note AN-957 Measuring HEXFET MOSFET Characteristics Table of Contents Page 1. General Information. 1 2. BVDSS . 3
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AN-957
tektronix 576 curve tracer
tektronix type 576 curve tracer
curve tracer
specification of curve tracer
AN-957
12 VOLTS CIRCUIT USING MOSFET
IRF630
AN957
short circuit tracer
INT-944
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tektronix 576 curve tracer
Abstract: tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176
Text: AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs
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AN-957
tektronix 576 curve tracer
tektronix type 576 curve tracer
tektronix 475
short circuit tracer
IRF630
AN957
curve tracer
INT-944
AN-957
Tracer 176
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tektronix 576 curve tracer
Abstract: No abstract text available
Text: VISHAY SILICONIX Power MOSFETs Application Note AN-957 Measuring Power MOSFET Characteristics TABLE OF CONTENTS Page 1. General Information . 2
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AN-957
18-Nov-10
tektronix 576 curve tracer
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tektronix 576 curve tracer
Abstract: tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944
Text: Index AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs
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AN-957
tektronix 576 curve tracer
tektronix type 576 curve tracer
curve tracer
AN957
specification of curve tracer
5V GATE TO SOURCE VOLTAGE MOSFET
IRF630
short circuit tracer
tektronix 475
INT-944
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Untitled
Abstract: No abstract text available
Text: BACK HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable
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AN-H21
HV9110/11/12/13/14
HV9120/23
IRF630
750KHz.
IRF630,
10-9F
000Hz
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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HV9113
Abstract: HV9120
Text: HV91 Series Application Note AN-H21 3 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable
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AN-H21
HV9110/11/12/13/14
HV9120/23
IRF630
750KHz.
IRF630,
10-9F
000Hz
HV9113
HV9120
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AN-H21
Abstract: irf630 mosfet data sheet HV9120 IC MOSFET QG IRF630 irf630 equivalent HV9113
Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable
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AN-H21
HV9110/11/12/13/14
HV9120/23
IRF630
750KHz.
IRF630,
10-9F
000Hz
AN-H21
irf630 mosfet data sheet
HV9120
IC MOSFET QG
irf630 equivalent
HV9113
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HV9113
Abstract: HV9120 VN2460
Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable
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AN-H21
HV9110/11/12/13
HV9120/23
IRF630,
10-9F
000Hz
HV9113
HV9120
VN2460
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HV9120
Abstract: No abstract text available
Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable
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AN-H21
HV9110/11/12/13
HV9120/23
IRF630,
10-9F
000Hz
HV9120
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PDF
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HV9113
Abstract: AN-H21 IC MOSFET QG VN2460 545u 0024W
Text: AN-H21 Application Note Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I First, the operational VDD the IC will use should be known. This is generally a parameter decided upon by the designer for his convenience. Once VDD is known, it is used to find the
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AN-H21
HV9110/11/12/13
HV9120/23
HV9113
AN-H21
IC MOSFET QG
VN2460
545u
0024W
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TRANSISTOR REPLACEMENT GUIDE
Abstract: SMD2512 UDG-99127 UCC3921 1N4148 IRF630 IRF630S UCC3913 SLUS274 texas instruments transistor manual
Text: Application Report SLUU076A - August 2000 UCC3913 or UCC3921 Hot Swap Power Manager Evaluation Board Power Management Products 1 Evaluation Board Operation This user’s guide highlights the UCC3913/ UCC3921 evaluation board in a typical –48-Vdc, 1-A application circuit.
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SLUU076A
UCC3913
UCC3921
UCC3913/
48-Vdc,
TRANSISTOR REPLACEMENT GUIDE
SMD2512
UDG-99127
1N4148
IRF630
IRF630S
SLUS274
texas instruments transistor manual
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3C80 philips
Abstract: 3C80 ferrite 55310-A2 3C80 transformer PHILIPS toroidal core 3f3 MOC8100 3C80 3c80 material 55310-a2 core EI187-3C80
Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequencies at lower quiescent current drain while including new innovations in both performance and protection features.
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U-150
UCC3570
48-to5V
RN55D
3C80 philips
3C80 ferrite
55310-A2
3C80 transformer
PHILIPS toroidal core 3f3
MOC8100
3C80
3c80 material
55310-a2 core
EI187-3C80
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irf630
Abstract: RD161
Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA
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IRF630
O-220
irf630
RD161
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f630
Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec
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IRF63Q
IRFG31
IRFB32
IRF633
TQ-220AB
C-245
IRF630,
IRF631,
IRF632,
IRF633
f630
IRF630 HEXFET TRANSISTORS
F633
IRF632
alps 103
DIODE C244
mosfet f630
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Untitled
Abstract: No abstract text available
Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF630,
RF1S630SM
400i2
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irf 4110
Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 IRF630 IRF631 irf 1962 SS-AT9
Text: MOTOROLA SC X S T R S /R F IME D II b3fej?554 0 0 0 ^ ^ 3 3 MOTOROLA I • SEMICONDUCTOR TECHNICAL DATA IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed fo r low
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IRF630
IRF631
IRF632
IRF630,
IRF632
irf 4110
for IRF630
1RF631
IRF6322
MOTOROLA IRF630
MTM8N20
irf 1962
SS-AT9
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Untitled
Abstract: No abstract text available
Text: International jag Rectifier • uêSS^SS 0 0 1 4 7 1 b 3bT B I N R PD-9.3091 I P p e o n INTERNATIONAL R ECTIFIER bSE HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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IRF630
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PDF
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid
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IRF630
21A-06
O-220AB)
b3b7254
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IRF630 HARRIS
Abstract: Transistor irf230 BUZ30 5A/IRF630 HARRIS
Text: HARRIS SEMICOND SECTOR tflE D • M30E271 QOS1 1 1 4 S E M I C O N D U C T O R January 1993 N “C h 3 n n l M O S C h ip Die Features • HAS PCF230W HARRIS a ■ Passivated • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni
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M30E271
PCF230W
Mil-Std-750,
IRF630
BUZ30
IRF230
2N6758
IRFF230
2N6798
PCF230W
IRF630 HARRIS
Transistor irf230
5A/IRF630 HARRIS
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55310-A2
Abstract: 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702
Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequen
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OCR Scan
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U-150
UCC3570
48-toSV
187-3C80
26AWG
31AWG
25AWG
T68-52D
20AWG
262LYF-0077M
55310-A2
4N25 PHILIPS
MTP3N80E
clock u150
100 watt hf mosfet 12 volt
U150D
TOKO 3702
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