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    IRF130 Price and Stock

    Infineon Technologies AG IRF1302S

    MOSFET N-CH 20V 174A D2PAK
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    DigiKey IRF1302S Tube
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    Infineon Technologies AG IRF130

    IRF130 Series 100 V 0.18 Ohm 12 nC Through Hole N-Channel Power MOSFET - TO-3
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    Future Electronics IRF130 Bulk 100
    • 1 $22.04
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    New Jersey Semiconductor Products, Inc. IRF130

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    Bristol Electronics IRF130 3,861 1
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    Vishay Siliconix IRF130

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    Bristol Electronics IRF130 11
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    General Electric Company IRF130

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    Bristol Electronics IRF130 2 1
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    Quest Components IRF130 1
    • 1 $12
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    IRF130 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF130 International Rectifier HEXFET Transistor Original PDF
    IRF130 Intersil 14A, 100V, 0.160 ?, N-Channel Power MOSFET Original PDF
    IRF130 Semelab N-Channel Power MOSFET Original PDF
    IRF130 Fairchild Semiconductor N-Channel Power MOSFETs, 20 A, 60-100 V Scan PDF
    IRF130 FCI POWER MOSFETs Scan PDF
    IRF130 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF130 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF130 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. Scan PDF
    IRF130 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF130 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF130 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRF130 Motorola Switchmode Datasheet Scan PDF
    IRF130 Motorola European Master Selection Guide 1986 Scan PDF
    IRF130 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF130 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    IRF130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF130 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRF130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SHD217302

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD217302A IRF130 SHD217302A SHD217302

    IRF1302L

    Abstract: IRF1302S
    Text: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF IRF1302S IRF1302L AN-994. IRF1302L IRF1302S

    smd diodes s4 1.5w

    Abstract: marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
    Text: IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )  ! VDSS ID(cont) RDS(on) 1 0 .1 6 (0 .4 0 0 )


    Original     		PDF IRF130SMD05N IRFN130SMD05 IRF130SMD05 IRF130SMD05" IRF130SMD05 IRF130SMD05DSG O276AA) 650pF smd diodes s4 1.5w marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a

    irf130

    Abstract: No abstract text available
    Text: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International


    Original     		PDF 90333F IRF130 JANTX2N6756 JANTXV2N6756 O-204AA/AE) MIL-PRF-19500/542] irf130

    Untitled

    Abstract: No abstract text available
    Text: PD - 94591 AUTOMOTIVE MOSFET Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax IRF1302 HEXFET Power MOSFET D VDSS = 20V


    Original     		PDF IRF1302 AN-994. O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF130SMD MECHANICAL DATA Dimensions in mm inches 0 .8 9 (0 .0 3 5 ) m in .  3 .6 0 (0 .1 4 2 ) M a x . ! VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 )


    Original     		PDF IRF130SMD 00A/ms

    IRF130

    Abstract: IRF132 IRF131 IRF133 TA17411 TB334 380uH
    Text: IRF130, IRF131, IRF132, IRF133 S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF130, IRF131, IRF132, IRF133 IRF130 IRF132 IRF131 IRF133 TA17411 TB334 380uH

    Untitled

    Abstract: No abstract text available
    Text: IRF130 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D)9.0 @Temp (øC)100 IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original     		PDF IRF130

    IRF130SMD

    Abstract: smd diode 44a
    Text: IRF130SMD MECHANICAL DATA Dimensions in mm inches  3 .6 0 (0 .1 4 2 ) M a x . ! VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRF130SMD 00A/ms IRF130SMD smd diode 44a

    43a 504 pcb mounted

    Abstract: No abstract text available
    Text: PD - 95407 AUTOMOTIVE MOSFET IRF1302SPbF IRF1302LPbF Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original     		PDF IRF1302SPbF IRF1302LPbF AN-994. 43a 504 pcb mounted

    smd diode 44a

    Abstract: smd BE 44A
    Text: IRF130SMD05DSGN MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 VDSS ID(cont) RDS(on) 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 2 100V 11A Ω 0.19Ω FEATURES


    Original     		PDF IRF130SMD05DSGN 00A/s smd diode 44a smd BE 44A

    IRF130

    Abstract: No abstract text available
    Text: roduct*., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS Features: Product Summary Part Number IRF130 BVDSS RDS(on) ID •


    Original     		PDF IRF130 IRF130

    QR204

    Abstract: CECC Detail Specifications 2N2369 equivalent
    Text: IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )  ! VDSS ID(cont) RDS(on) 1 0 .1 6 (0 .4 0 0 )


    Original     		PDF IRF130SMD05N IRFN130SMD05 IRF130SMD05 IRF130SMD05DSG O276AA) 650pF MIL-PRF-19500, CPR\10192006\SEME\IRF130. 03-Jan-2007 QR204 CECC Detail Specifications 2N2369 equivalent

    irf 210 mosfet

    Abstract: No abstract text available
    Text: PD - 95499 AUTOMOTIVE MOSFET IRF1302PbF HEXFET Power MOSFET Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 20V


    Original     		PDF IRF1302PbF AN-994. O-220 irf 210 mosfet

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    IRf 48 MOSFET

    Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
    Text: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF130, IRF131, IRF132, IRF133 0V-100V 92CS-33741 IRF132 IRF133 IRf 48 MOSFET MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A

    D86DL2

    Abstract: IRF130 CPD75
    Text: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 14.0 AMPERES


    OCR Scan     		PDF IRF130 D86DL2 250MA, Rds10Ni CPD75

    IRF130

    Abstract: irf131 142SA
    Text: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF D0DS074 IRF130/131/132/133 IRF130 IRF131 IRF132 IRF133 00US435 F--13 142SA

    1RF130

    Abstract: IRFI30 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs IRF132 MOSFET 150 N IRF T39 diode IRF130
    Text: •01 D eT J ^ Ö V S O A I 3875081 G E SOLID STATE Standard Power M OSFETs OOlflEbT T f " 01E 18269 D T " ‘3 ? ‘"/i _ IRF130, IRF131, IRF132, IRF133 File N u m b e r 1 566 Power MOS Field-Effect Transistors


    OCR Scan     		PDF IRF130, IRF131, IRF132, IRF133 12Aand 0V-100V IRF132 1RF130 IRFI30 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs MOSFET 150 N IRF T39 diode IRF130

    irf130

    Abstract: IRF133 IRF132 IRF131 IRF130 mosfet
    Text: IRF130, IRF131, IRF132, IRF133 HARRIS S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF130, IRF131, IRF132, IRF133 TA17411. irf130 IRF133 IRF132 IRF131 IRF130 mosfet

    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10

    IRF530

    Abstract: irf531 VN1200A IRF130 IRF532 VN0801D 100VI vn1200d IRF131 IRF132
    Text: • IRF133 ■ IRF131 s?UL IRF130 IRF530 ■ IRF531 ■ IRF132 C4 ■ IRF131 ■ s ■ UL ■ OC ■ ■ IRF130 « OC ■ IRF132 ■ IRF133 ■ IRF532 ■ IRF533 S Siliconix 100VMOSPOWER N-Channel Enhancement Mode CO IO These power FETs are designed especially for audio amplifiers,


    OCR Scan     		PDF IRF130 IRF131 IRF132 IRF133 IRF530 IRF531 IRF532 IRF533 IRF130 IRF131 IRF530 irf531 VN1200A IRF532 VN0801D 100VI vn1200d IRF132

    IRF150 To220 package

    Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
    Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232


    OCR Scan     		PDF Q0D01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF150 To220 package irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V

    IRF130 mosfet

    Abstract: irf133 83AD IRF133 international rectifier and/IRF133 irf132
    Text: HE D I 40 5 5 4 5 2 OGOTOSG 1 | Data Sheet No. PD-9.303H INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IO R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF130 IRF131 IRF132


    OCR Scan     		PDF T-39-11 IRF130 IRF131 IRF132 IRF133 T0-204AA IRF130, IRF131, IRF132, IRF133 IRF130 mosfet 83AD IRF133 international rectifier and/IRF133