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    CPD75 Datasheets (1)

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    CPD75 Central Semiconductor 5 Amp Schottky Barrier Rectifier Chip Original PDF

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    CPD75

    Abstract: CZSH10-40C CZSH5-40
    Text: PROCESS CPD75 Schottky Rectifier 5 Amp Schottky Barrier Rectifier Chip PROCESS DETAILS Die Size 72.5 x 72.5 MILS Die Thickness 11.8 mils Anode Bonding Pad Area 63.8 x 63.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY


    Original     		CPD75 CZSH5-40 CZSH10-40C CPD75 CZSH10-40C CZSH5-40 PDF

    CPD75

    Abstract: CZSH10-40C CZSH5-40
    Text: PROCESS CPD75 Central Schottky Rectifier TM Semiconductor Corp. 5 Amp Schottky Barrier Rectifier Chip PROCESS DETAILS Die Size 72.5 x 72.5 MILS Die Thickness 11.8 MILS Anode Bonding Pad Area 63.8 x 63.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD75 CZSH5-40 CZSH10-40C CPD75 CZSH10-40C CZSH5-40 PDF