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    IRF MOSFET 100A 200V Search Results

    IRF MOSFET 100A 200V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF MOSFET 100A 200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF MOSFET 100A 200v

    Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
    Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current


    Original     		PDF IRF5801PbF 10sec. IRF MOSFET 100A 200v IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806

    AN1001

    Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
    Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-95474A IRF5801PbF AN1001) 10sec. AN1001 IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001

    Untitled

    Abstract: No abstract text available
    Text: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF 5355A IRFR15N20DPbF IRFU15N20DPbF AN1001) IRFR15N20D IRFU15N20D AN-994.

    AN1001

    Abstract: EIA-541 IRFU120 IRFU220N R120 U120 4.5V TO 100V INPUT REGULATOR
    Text: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF 5063A IRFR220NPbF IRFU220NPbF AN1001) IRFR22ON IRFU220N AN-994. AN1001 EIA-541 IRFU120 IRFU220N R120 U120 4.5V TO 100V INPUT REGULATOR

    IRF MOSFET 10A P

    Abstract: IRF P CHANNEL MOSFET 10A 100V IRF 10A IRF P CHANNEL MOSFET 100v MOSFET 150 N IRF power Diode 200V 10A 12v 10A regulator IRF AN1001 AN1001 EIA-541
    Text: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF 5355A IRFR15N20DPbF IRFU15N20DPbF AN1001) IRFR15N20D IRFU15N20D AN-994. IRF MOSFET 10A P IRF P CHANNEL MOSFET 10A 100V IRF 10A IRF P CHANNEL MOSFET 100v MOSFET 150 N IRF power Diode 200V 10A 12v 10A regulator IRF AN1001 AN1001 EIA-541

    sit transistor

    Abstract: IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET 10A 100V power Diode 200V 10A AN1001 EIA-541 IRFU120 IRFU220N R120
    Text: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF 5063A IRFR220NPbF IRFU220NPbF AN1001) IRFR22ON IRFU220N AN-994. sit transistor IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET 10A 100V power Diode 200V 10A AN1001 EIA-541 IRFU120 IRFU220N R120

    IRF 870

    Abstract: mosfet IRF 870 IRFR9214 IRFU9214
    Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S


    Original     		PDF 5375A IRFR/U9214PbF IRFR9214) IRFU9214) -250V O-252AA) EIA-481 EIA-541. EIA-481. IRF 870 mosfet IRF 870 IRFR9214 IRFU9214

    Untitled

    Abstract: No abstract text available
    Text: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF 5355A IRFR15N20DPbF IRFU15N20DPbF AN1001) IRFR15N20D IRFU15N20D AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF 5063A IRFR220NPbF IRFU220NPbF AN1001) IRFR22ON IRFU220N AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S


    Original     		PDF 5375A IRFR/U9214PbF IRFR9214) IRFU9214) -250V 08-Mar-07

    IRFS630A

    Abstract: No abstract text available
    Text: IRFS630A Advanced Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0 . 4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10H A (M ax.) @ V DS = 200V I Low Rds(0n) ■ 0.333 £1 (Typ.)


    OCR Scan     		PDF IRFS630A Fig12. IRFS630A

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I740A A d van ced Power MOSFET FEATURES B V DSS = 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance In = 1 0 0 .5 5 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K


    OCR Scan     		PDF IRFW/I740A /I740A

    Untitled

    Abstract: No abstract text available
    Text: IR F W /I7 4 0 A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -5 5 ÌÌ 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRFW/I740A

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I730A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .0 Î 2 5 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFW/I730A

    Untitled

    Abstract: No abstract text available
    Text: IRF614 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 .0 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF614

    Untitled

    Abstract: No abstract text available
    Text: IRF614A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 .0 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF614A

    ifr 350 mosfet

    Abstract: IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet
    Text: IRL620A Advanced Power MOSFET FEATURES 200 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA M ax. @ VOS = 200V Lower RDS(ON) : 0.609 i l (Typ.)


    OCR Scan     		PDF IRL620A O-220 003T14ti 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D ifr 350 mosfet IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet

    IRF MOSFET 100A 200v

    Abstract: IRF MOSFET driver IRF 250V 100A IRf 48 MOSFET MOSFET 150 N IRF IRF 100A MOSFET IRF power mosfet IRF soc 8a mosfet irf 150
    Text: IRFW/I614A A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^D S o n = ♦ Lower Input Capacitance _Q ♦ Improved Gate Charge CO c\i II ♦ Rugged Gate Oxide Technology 250 V 2.0 a A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFW/I614A /I614 IRF MOSFET 100A 200v IRF MOSFET driver IRF 250V 100A IRf 48 MOSFET MOSFET 150 N IRF IRF 100A MOSFET IRF power mosfet IRF soc 8a mosfet irf 150

    Untitled

    Abstract: No abstract text available
    Text: IRFS610A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V I Low Rds(0 n) ■ 1.169 £1 (Typ.) LO Rugged Gate Oxide Technology


    OCR Scan     		PDF IRFS610A

    IRF MOSFET 100A 200v

    Abstract: MOSFET 150 N IRF
    Text: IRFW/I740A A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFW/I740A IRF MOSFET 100A 200v MOSFET 150 N IRF

    Untitled

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES BV • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge dss = ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea ■


    OCR Scan     		PDF IRFS250A

    f9240

    Abstract: irf9240r irf 44 n rf924
    Text: HARRIS IR F 9 2 40 , IR F9241 IRF9242, IRF9243 Avalanche Energy Rated P-Channel Power MOSFETs A ugust 1991 Features Package T O -2Û 4A A BOTTOM VIEW • -9A and -11A , -15 0 V and -200V • rDS ON = 0 .5 0 0 and 0 .7 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF F9241 -200V IRF9240, IRF9241, IRF9242 IRF9243 conveRF9242, F9243 4J26Q f9240 irf9240r irf 44 n rf924

    f640

    Abstract: IR 643 643R
    Text: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F640/641/642/643 F640R/641R/642R /643R IRF640, IRF641, IRF642, IRF640R, IRF641R, IRF642R IRF643R f640 IR 643 643R

    L02A

    Abstract: No abstract text available
    Text: IRFW/T710A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A M ax. @ VDS= 400V


    OCR Scan     		PDF IRFW/T710A IRFW/I710A L02A