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    IR SS100 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    8638PSS1006LF Amphenol Communications Solutions D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Socket Solder Bucket 10A, >500 Cycles Visit Amphenol Communications Solutions
    8638PSS1005LF Amphenol Communications Solutions D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Socket Solder Bucket 10A, >200 Cycles Visit Amphenol Communications Solutions

    IR SS100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mbrf1060ctl

    Abstract: No abstract text available
    Text: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1


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    PDF OD-123 BAT54W OT-323 BAT54WS BAT54A OT-23 BAT54C BAT54S mbrf1060ctl

    Untitled

    Abstract: No abstract text available
    Text: SS10015M Ordering number : ENN7979 Schottky Barrier Diode SS10015M 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.32V) (IF=0.5A, VF max=0.35V).


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    PDF SS10015M ENN7979

    marking DF

    Abstract: ECSP1608-4 N3004 SS1003EJ
    Text: SS1003EJ Ordering number : ENN8157 SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).


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    PDF SS1003EJ ENN8157 500mA, marking DF ECSP1608-4 N3004 SS1003EJ

    ECSP1608-4

    Abstract: N3004 SS1003EJ
    Text: SS1003EJ Ordering number : EN8157A SANYO Semiconductors DATA SHEET SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).


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    PDF SS1003EJ EN8157A 500mA, ECSP1608-4 N3004 SS1003EJ

    SS1003M3

    Abstract: No abstract text available
    Text: SS1003M3 Ordering number : EN8372A SANYO Semiconductors DATA SHEET SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=1.0A, VF max=0.43V).


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    PDF SS1003M3 EN8372A SS1003M3

    SS1003M3

    Abstract: No abstract text available
    Text: SS1003M3 Ordering number : ENN8372 SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=0.35mA, VF max=0.43V).


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    PDF SS1003M3 ENN8372 SS1003M3

    "Marking SC"

    Abstract: SS1003M
    Text: SS1003M Ordering number : ENN8347 SS1003M Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small Switching noise. Low forward voltage(IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).


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    PDF SS1003M ENN8347 500mA, "Marking SC" SS1003M

    SS10015M

    Abstract: 138SF 15VIO sanyo SS10015M
    Text: SS10015M 注文コード No. N 7 9 7 9 三洋半導体データシート N ショットキバリアダイオード SS10015M 15V1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


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    PDF SS10015M 15V1A 100mA, 600mm2 53104SB TA-101012 IT07150 IT07152 IT07153 SS10015M 138SF 15VIO sanyo SS10015M

    ECSP1608-4

    Abstract: SS1003EJ 7033a
    Text: SS1003EJ 注文コード No. N 8 1 5 7 A 三洋半導体データシート 半導体ニューズ No.N8157 をさしかえてください。 SS1003EJ ショットキバリアダイオード 30V1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


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    PDF SS1003EJ N8157 30V1A 500mA, 500mA 600mm2 62797GI TB-00000946 O1806 ECSP1608-4 SS1003EJ 7033a

    VR 100K

    Abstract: SS1003M3 ID00435 VR100K
    Text: SS1003M3 注文コード No. N 8 3 7 2 A 三洋半導体データシート 半導体ニューズ No.N8372 をさしかえてください。 SS1003M3 ショットキバリアダイオード 30V1.0A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


    Original
    PDF SS1003M3 N8372 100mA, 72mm2 500mm 62797GI TB-00001532 IT09557 IT09559 VR 100K SS1003M3 ID00435 VR100K

    SS1003M

    Abstract: No abstract text available
    Text: SS1003M 注文コード No. N 8 3 4 7 三洋半導体データシート N SS1003M ショットキバリアダイオード 30V1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


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    PDF SS1003M 30V1A 500mA, 500mA 100mA, 600mm2 62797GI TB-00001441 61005SB SS1003M

    ECSP1608-4

    Abstract: SB1003EJ SB1003M SS1003EJ SS1003M 16084 ecsp 1608-4 PACKAGE sanyo
    Text: PRODUCT INFORMATION Vol.180 PicoSBD One Ampere-Rated Two-Terminal Leadless Schottky Barrier Diode Series Developed New devices achieve the industry's highest rated current of 1 A in a 1608 size device SS1003EJ, SB1003EJ, SS1003M and SB1003M Overview The market for miniature portable equipment powered by rechargeable batteries, equipment such as


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    PDF SS1003EJ, SB1003EJ, SS1003M SB1003M ECSP1608-4 SB1003EJ SB1003M SS1003EJ 16084 ecsp 1608-4 PACKAGE sanyo

    Untitled

    Abstract: No abstract text available
    Text: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)


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    PDF EN8690 CPH5848 MCH3306) SS10015M)

    MCH3339

    Abstract: MCH5823 SS10015M
    Text: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)


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    PDF MCH5823 ENN7757 MCH3339) SS10015M) MCH3339 MCH5823 SS10015M

    86886

    Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
    Text: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)


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    PDF CPH5846 EN8688 MCH3309) SS10015M) 86886 diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001

    D1004

    Abstract: MCH3405 MCH5811 SS10015M
    Text: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)


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    PDF MCH5811 ENN8059 MCH3405) SS10015M) D1004 MCH3405 MCH5811 SS10015M

    MCH3307

    Abstract: MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


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    PDF MCH5836 ENA0780 MCH3307) SS10015M) A0780-6/6 MCH3307 MCH5836 SS10015M

    SS1001

    Abstract: MCH5837 mosfet yb SS10015M TA72
    Text: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


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    PDF MCH5837 ENA0781 SS10015M) A0781-6/6 SS1001 MCH5837 mosfet yb SS10015M TA72

    SS1001

    Abstract: MCH3307 MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780A SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


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    PDF MCH5836 ENA0780A MCH3307) SS10015M) PW10s, A0780-6/6 SS1001 MCH3307 MCH5836 SS10015M

    SS10015M

    Abstract: VEC2820
    Text: VEC2820 Ordering number : ENA0849 SANYO Semiconductors DATA SHEET VEC2820 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode SS10015M contained in one


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    PDF VEC2820 ENA0849 SS10015M) A0849-6/6 SS10015M VEC2820

    SS1001

    Abstract: ENA0781A MCH5837 SS10015M
    Text: MCH5837 Ordering number : ENA0781A SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


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    PDF MCH5837 ENA0781A SS10015M) A0781-6/6 SS1001 ENA0781A MCH5837 SS10015M

    MCH3339

    Abstract: MCH5823 SS10015M
    Text: MCH5823 注文コード No. N 7 7 5 7 三洋半導体データシート N MCH5823 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ MCH3339 とショットキバリアダイオード(SS10015M)を 1 パッケージに


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    PDF MCH5823 MCH3339) SS10015M) 900mm2 D2004PE TB-00001070 IT07151 MCH3339 MCH5823 SS10015M

    MCH5846

    Abstract: SS10015M CPH5846 MCH3309
    Text: CPH5846 注文コード No. N 8 6 8 8 三洋半導体データシート N CPH5846 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタ MCH3309 とショットキバリアダイオード(SS10015M)を 1 パッケージに


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    PDF CPH5846 MCH3309) SS10015M) 900mm2 N0106PE TC-00000270 IT07150 IT07152 MCH5846 SS10015M CPH5846 MCH3309

    A0849

    Abstract: SS10015M VEC2820
    Text: VEC2820 注文コード No. N A 0 8 4 9 三洋半導体データシート N VEC2820 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタとショットキバリアダイオード SS10015M を 1 パッケージに内蔵した複


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    PDF VEC2820 SS10015M) 900mm2 60607PE TC-00000736 A0849-1/6 IT07152 IT07153 A0849 SS10015M VEC2820