Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
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G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E01
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.
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G12430
G12430-016D
G12430-032D
G12430-046D
40-pin
48-pin
18-pin
KIRD1124E02
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1C12
Abstract: 1300nm TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm
Text: TPA-1C12 InGaAs PIN photodiode Array FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Surface reflectivity 2 Responsivity uniformity Dark Current
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TPA-1C12
1300nm
1300nm
1E-10
1E-11
1E-12
1E-13
250x250
1C12
TPA photodiode
photo diode array InGaAs
TPA-1C12
PIN 1300nm
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InGaAs PIN photodiode Long Wavelength 2.6
Abstract: THOMSON-CSF PRODUCTS ir photodiode array ingaas QS 7779 BP 40 Diagramm R T Thomson-CSF diodes
Text: TH7426A/27A NEAR INFRARED InGaAs LINEAR IMAGE SENSOR 300 PIXELS DESCRIPTION These devices are based on a 300 InGaAs photodiode linear array, with a 26µm pitch, using an in line pixel layout or a staggered pixel layout. Two 150:1 CCD multiplexor chips, offering memory and delayed readout capability, are hybridized on both sides of the
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TH7426A/27A
TH74KA26A/TH74KA27A
TH74KB26A/TH74KB27A.
DSTH7426A/27AT/0398
InGaAs PIN photodiode Long Wavelength 2.6
THOMSON-CSF PRODUCTS
ir photodiode array ingaas
QS 7779
BP 40 Diagramm R T
Thomson-CSF diodes
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THOMSON-CSF linear array CCD
Abstract: silicon vidicon BP 40 Diagramm R T
Text: TH7422B NEAR INFRARED InGaAs LINEAR SENSOR 300 PIXELS DESCRIPTION This device is based on a 300 InGaAs photodiode linear array, with a 26µm pitch, using an in line pixel layout. Two 150:1 CCD multiplexors chips, offering memory and delayed readout capability, are hybridized on both sides of
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TH7422B
74KA22B
74KB22B.
THOMSON-CSF linear array CCD
silicon vidicon
BP 40 Diagramm R T
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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650nm 5mw laser
Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Text: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
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1550nm
650nm 5mw laser
ird300
laser range finder schematics
500mW 808nm infrared laser diode driver circuit
650nm laser diode 200mw
circuit diagram of radar range finder
LD-808-500G
t15f-xyz-wm
LD-808-1000G
LD-650-5A
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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uv phototransistor
Abstract: CLD240E CLD271 CLD240 LED NIGHT LAMP CIRCUIT CLL133 cll135 CLD340 CL9P5L CLL136
Text: Clairex OPTOELECTRONIC Technologies, Inc. PACKAGING & PRODUCTS 1301 East Plano Parkway Plano, Texas 75074-8524 PH: 972-265-4900 FAX: 972-265-4949 www.clairex.com CLAIREX TODAY Clairex Technologies, incorporated in Texas in 1994, has grown to become an internationally recognized leader in
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390nm
465nm
525nm
660nm
850nm
uv phototransistor
CLD240E
CLD271
CLD240
LED NIGHT LAMP CIRCUIT
CLL133
cll135
CLD340
CL9P5L
CLL136
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R7600U-300
Abstract: MOST150 S11518
Text: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07
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G11608
G11608-256DA
G11608-512DA
DE128228814
R7600U-300
MOST150
S11518
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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Sensors PSD
Abstract: No abstract text available
Text: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches
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16-element
C9004)
KACCC0426EB
Sensors PSD
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ic 555 use with metal detector
Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Text: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.
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laser range finder schematics
Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series
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C10500
Abstract: linear CCD 512 TDI cmos image sensor
Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide
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KAPD0002E12
C10500
linear CCD 512
TDI cmos image sensor
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Laser Diode 808 2 pin 1000 mw
Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
Text: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm
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R6094 pmt divider circuit
Abstract: Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray
Text: New CCD for Low-Light Scientific Applications High-Speed InGaAs APD + TIA ROSA Highly Sensitive Image Intensifier with Large Active Area Flat-Panel Sensor Product Line Extended The Improved Macro Imaging System AEQUORIA Imaging-Based Plate Reader FDSS for HighThroughput
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31-Nov
R6094 pmt divider circuit
Hamamatsu r6094
C9321CA-02
R4110U-74
AUTOMATIC STREET LIGHT CONTROLLER using IR sensor
InGaas PIN photodiode chip back illuminated
apd raman
wafer 60g
H9656
sensor x-ray
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Image sensors
Abstract: ccd sensors
Text: Image sensors 1 CCD image sensors 1-1 1-2 1-3 1-4 Structure and operating principle Characteristics How to use New approaches CHAPTER 05 6 Photodiode arrays with amplifiers 6-1 6-2 6-3 6-4 6-5 Features Structure Operating principle Characteristics How to use
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14-Bit
Image sensors
ccd sensors
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InGaAs PIN photodiode Long Wavelength 2.6
Abstract: ir photodiode array ingaas
Text: InGaAs PIN Photodiodes Near IR detectors with low noise and superior frequency response • Standard types Standard types cover a spectral response from 0.9 to 1.7 |im, and available with 7 active areas ranging from 0.08 mm to 5.0 mm in diam eter. Applications include optical communications, power meter, near
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256-element
InGaAs PIN photodiode Long Wavelength 2.6
ir photodiode array ingaas
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IR photodiode array
Abstract: No abstract text available
Text: InGaAs PIN Photodiodes Near IR detectors with low noise and superior frequency response • Standard types S tan d ard types co ver a spectral resp onse from 0 .9 to 1.7 pirn, and available with 7 active areas ranging from 0 .0 8 mm to 5 .0 mm in diam eter. Applications include optical com m unications, power m eter, near
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES □□16244 7T4 PD7XX9 SERIES N°"c' . i i *1 S o n * P « 'a InGaAs PIN PHOTO DIODES TYPE NAME DESCRIPTION FEATURES P D 7 X X 9 series are InGaAs photodiode array which # has # <t> 4 0 u m active diam eter # 2 5 0 u m spacing betw een sensitive area
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1300nm
1300nm,
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InGaAs Epitaxx linear
Abstract: D000G1 EPITAXX silicon photodiode array linear array photodiode element photodiode 256 elements silicon
Text: EP I T A X X INC 3 3 b 0 4 Qb OO OO CH ? 54E D EPITAXX M ETX30 & 100MLA 64,128 & 256 T M I-s s InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;
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33b04Qb
100MLA
30MLA
30x30
100x30
05x025
025X05
InGaAs Epitaxx linear
D000G1
EPITAXX
silicon photodiode array
linear array photodiode element
photodiode 256 elements silicon
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APD InGaAs array
Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
Text: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4
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S1226,
S1227
S1336,
S1337
S2386,
S2387
C2719,
C6386
H4741,
H3651,
APD InGaAs array
Photodiodes
Pyroelectric Detectors
Image Sensors
Photodiode apd amplifier VISIBLE
Photodiode Array Detectors
INSB PHOTODIODE
Avalanche cmos detector
H4741
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