IRFP340
Abstract: IRFP-341 IRFP341
Text: h a r r is s e m ic o n d u c to r IR F P 3 4 0 , IR F P 3 4 1 , IR F P 3 4 2 , IR F P 3 4 3 11A and 8.7A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 11A and 8.7A, 350V and 400V • Linear Transfer Characteristics
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TA17424.
IRFP340,
IRFP341,
IRFP342,
IRFP343
IRFP343
IRFP340
IRFP-341
IRFP341
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GH mosfet
Abstract: FDS6815
Text: FDS6815 July 1999 P /\IR C H II_D ADVANCE INFORMATION EMl C O N D U C TO R ! FDS6815 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced
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FDS6815
FDS6815
GH mosfet
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Untitled
Abstract: No abstract text available
Text: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V
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IRFR/U5410
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irfp 9240
Abstract: irfp 240 IRFP p-channel irfp9240
Text: HARRIS IR F P 9 2 4 0 /P 9 2 4 1 IR FP 9242/P 9243 Avalanche Energy Rated P-Channel Power MOSFETs May 1992 Package Features T O -2 4 7 • -10A and -12A , -2 0 0 V and -15 0 V T O P VIEW • fDS ON = 0 .5 0 ft and 0.7ft • Single Pulse Avalanche Energy Rated
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9242/P
IRFP9240,
IRFP9241,
IRFP9242
IRFP9243
92CS-43281
irfp 9240
irfp 240
IRFP p-channel
irfp9240
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Untitled
Abstract: No abstract text available
Text: H A R R IS sem iconductor IR F 9230, IR F 9231, IR F9232, IR F 9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs J a n u a ry 1998 Features Description • -5.5A a n d -6 .5 A ,-1 5 0 V a n d -2 0 0 V • High Input Impedance
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F9232,
-150V
-200V,
IRF9230,
IRF9231,
RF9232,
IRF9233
RF9231,
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PDF
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F9232
Abstract: No abstract text available
Text: IR F 9230, IR F9231 IR F 9232, IR F9233 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • - 5 .5 A a n d - 6 .5 A , - 1 5 0 V a n d - 2 0 0 V • r D S O N = 0 . 8 0 Î Î a n d 1 . 2 f i SOURCE
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F9231
F9233
92CS-4?
92CS-43305
F9232
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PDF
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Untitled
Abstract: No abstract text available
Text: November 1998 F A IR C H IL D SEM IC ONDUCTO R tm FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDN336P
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PDF
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LS025
Abstract: ci 415A FDG6302P SC70-6
Text: July 1999 F = A IR O H II_ D SEMICONDUCTOR tm FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This
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FDG6302P
SC70-6
OT-23
FDG6302P
LS025
ci 415A
SC70-6
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PDF
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Untitled
Abstract: No abstract text available
Text: October 1998 F A IR C H IL D SEM IC O N D UC TO R tm FDS6675 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDS6675
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PDF
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IRF9510 harris
Abstract: No abstract text available
Text: h a r r is s e m ic o n d u c to r I R F 9 5 1 0 , I R F 9 5 1 1, IR F 9 5 1 2 , IR F 9 5 1 3 -2.5A and -3.0A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Description Features -2.5A and -3.0A, -80V and -100V High Input Impedance These are P-Channel enhancem ent mode silicon gate
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-100V,
-100V
IRF9510,
IRF9511,
IRF9512,
IRF9513
IRF9510 harris
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PDF
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D Ju,y1999 SEMICONDUCTOR tm FDG6304P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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y1999
FDG6304P
FDG6304P
34bTb74
0Pb28c
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PDF
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IRF9511
Abstract: IRF9513 IRF9510 IRF9512 100-C
Text: Rugged Power MOSFETs File Number 2214 IR F9510, IR F 9 5 1 1 IR F9512, IR F9513 Avalanche-Energy-Rated P-Channel Power MOSFETs -2.5A, a n d -3.0A, -60V a n d -100V rDsion = 1.20 a n d 1.60 t e r m in a l d ia g r a m Feature*: o • S in g le pulse a va lan ch e e n e rg y rated
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IRF9510,
IRF9511
IRF9512,
IRF9513
-100V
92CS-43262
IRF9511,
IRF9512and
IRF9513
IRF9511
IRF9510
IRF9512
100-C
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PDF
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier PD - 9.1099B IR F 7 1 0 7 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching N-CHANNEL MOSFET
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1099B
55MS2
002b511
IRF7107
002b5
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PDF
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D Ju|y1996 SEM ICONDUCTO R NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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y1996
NDS8958
-30Vady-
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IRFP9140N
Abstract: 100v 23A P-Channel MOSFET 9140N 1492-A
Text: I , ,• I P D - 9 .1492A In ternational 10R Rectifier IR F P 9140N P R E L IM INARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175 °C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated
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9140N
-100V
O-247
IRFP9140N
100v 23A P-Channel MOSFET
9140N
1492-A
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PDF
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Untitled
Abstract: No abstract text available
Text: F /\IR C H II_ D June 1999 M IC D N D U C T D R i FDC638P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDC638P
DC/567
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PDF
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D October 1998 S E M I C O N D U C T O R tm FDS4435 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDS4435
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PDF
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Untitled
Abstract: No abstract text available
Text: F A IR C H II- D S E M IC O N D U C T O R November 1998 tm FDS65 75 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDS65
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PDF
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Untitled
Abstract: No abstract text available
Text: November 1998 F A IR C H IL D S E M IC O N D U C T O R M FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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OCR Scan
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FDN336P
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PDF
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Untitled
Abstract: No abstract text available
Text: May 1998 F A IR C H IL D iM IC D N D U C T O R ! FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high
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FDS8934A
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PDF
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Untitled
Abstract: No abstract text available
Text: International l ü Rectifier Provisional Data Sheet No. PD-9.1392 AVALANCHE ENERGY AND dv/dt RATED IR H 9 2 5 0 HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.315Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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IRLML6402
Abstract: irlml6402 sot23 ir JT2000 IRLML2803 Micro3 AN-994 IRLML2402 IRLML5103 IRLML6302 marking BSs sot23
Text: P D -93755 International 3BR Rectifier IR L M L 6 4 0 2 HEXFET Power MOSFET Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V d s s = -2 0 V RüS(on) = 0.065Î2 Description These P-Channel MOSFETs from International Rectifier utilize
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OT-23
EIA-481
EIA-541.
IRLML6402
irlml6402 sot23 ir
JT2000
IRLML2803
Micro3
AN-994
IRLML2402
IRLML5103
IRLML6302
marking BSs sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H
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IRFF9120,
IRFF9121,
IRFF9122
IRFF9123
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PDF
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FR9214
Abstract: No abstract text available
Text: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A
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IRFU9214N
IRFR/U9214
-250V
EIA-481.
FR9214
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PDF
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