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    IR MOSFETS Search Results

    IR MOSFETS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IR MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-999

    Abstract: No abstract text available
    Text: Application Note AN-999 International Rectifier’s Total Dose Radiation Hardness Assurance RHA Test Program Table of Contents Page Baseline Requirements .1 IR


    Original     		PDF AN-999 300Krad 600Krad AN-999

    AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

    Abstract: IRS2092 pcb IRS2092 IRS20955 IRS2092S mosfet audio amplifier circuit high power fet audio amplifier schematic irs2092 amplifier class d amplifier schematic IRAUDAMP
    Text: Application Note AN-1135 PCB Layout with IR Class D Audio Gate Drivers By Jun Honda, Connie Huang Table of Contents Page Application Note AN-1135 . 1 0. Introduction . 2


    Original     		PDF AN-1135 IRS2092 AUDIO MOSFET POWER AMPLIFIER SCHEMATIC IRS2092 pcb IRS2092 IRS20955 IRS2092S mosfet audio amplifier circuit high power fet audio amplifier schematic irs2092 amplifier class d amplifier schematic IRAUDAMP

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: FREDERICK COMPONENTS V C POW ER M O SF E T s VD S I D 25TC 1 0 0 °C Rd A (V ) s W ) C IS S td m *D (o h m s) (P F ) (A ) (W ) P ackage IR F 1 2 0 IR F 1 2 2 IR F 1 2 3 IR F 1 3 0 IR F 1 3 1 IR F 1 3 2 IR F 1 3 3 IR F 1 4 0 IR F 1 4 1 IR F 1 4 2 IR F 1 4 3


    OCR Scan     		PDF

    IRF150R

    Abstract: IRF151R IRF152R IRF153R
    Text: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF150R, IRF151R, IRF152R, IRF153R 0V-100V 92cs-42c9s IRF152R IRF153R IRF150R IRF151R

    IRFP340

    Abstract: IRFP-341 IRFP341
    Text: h a r r is s e m ic o n d u c to r IR F P 3 4 0 , IR F P 3 4 1 , IR F P 3 4 2 , IR F P 3 4 3 11A and 8.7A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 11A and 8.7A, 350V and 400V • Linear Transfer Characteristics


    OCR Scan     		PDF TA17424. IRFP340, IRFP341, IRFP342, IRFP343 IRFP343 IRFP340 IRFP-341 IRFP341

    IRF9511

    Abstract: IRF9513 IRF9510 IRF9512 100-C
    Text: Rugged Power MOSFETs File Number 2214 IR F9510, IR F 9 5 1 1 IR F9512, IR F9513 Avalanche-Energy-Rated P-Channel Power MOSFETs -2.5A, a n d -3.0A, -60V a n d -100V rDsion = 1.20 a n d 1.60 t e r m in a l d ia g r a m Feature*: o • S in g le pulse a va lan ch e e n e rg y rated


    OCR Scan     		PDF IRF9510, IRF9511 IRF9512, IRF9513 -100V 92CS-43262 IRF9511, IRF9512and IRF9513 IRF9511 IRF9510 IRF9512 100-C

    sj 76a

    Abstract: 377D IRFF430 IRFF431 IRFF432 IRFF433 IRF 250V 100A g385 125CV
    Text: HE D | 4055452 0GGc14Qb 3 | Data Sheet No. PD-9.377D I«R INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER T-39-09 HEXFET TRA N SISTO RS IR FF4 3 0 IRFF431 N-CHANNEL POWER MOSFETs TO-39 P A C K A G E IR FF4 3 2 IR FF4 3 3 500 Volt, 1.5 Ohm HEXFET


    OCR Scan     		PDF T-39-09 G-388 sj 76a 377D IRFF430 IRFF431 IRFF432 IRFF433 IRF 250V 100A g385 125CV

    ifr110

    Abstract: No abstract text available
    Text: IR F R 1 1 0 , IR F U 1 1 0 Semiconductor D ata S h eet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the


    OCR Scan     		PDF 540i2 IRFR110, IRFU110 ifr110

    j332

    Abstract: J333 g559 IRFJ330 IRFJ331 IRFJ332 IRFJ333 9405A w sa 45a diode
    Text: h e D I MassMsa a c m s a o a | Data Sheet No. PD-9.405A IN TERNATI ONAL RE CT IF IER r IN T E R N A T IO N A L H E X F E T - 3 R E C T IF IE R ? - T 6 ? & R IR F J 3 3 0 T R A N S IS T O R S IR F J 3 3 1 N-GHANNEL POWER MQSFETs IR F J 3 3 2 IR F J 3 3 3


    OCR Scan     		PDF mass452 G-561 IRFJ330, IRFJ331, IRFJ332, IRFJ333 T-39-09 75BVoss G-562 j332 J333 g559 IRFJ330 IRFJ331 IRFJ332 9405A w sa 45a diode

    9517A

    Abstract: irf 4110 irfu9022 IRFR9020 IRFR9022 IRFU9020 7n20 LG 57A 1U40
    Text: HE 0 | 4Û55452 QQQûaib ü T-37-25 Data Sheet No. PD-9.517A | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS020 IR F R 9 0 S S IR F U 9 0 2 0 IR F U 9 Q S 2 P -C H A N N E L Product Summary -50 Volt, 0.20 Ohm HEXFET


    OCR Scan     		PDF T-37-25 IRFR9020, IRFR9022, IRFU9020, IRFU9022 T-37-25 IRFR9020TR 9517A irf 4110 IRFR9020 IRFR9022 IRFU9020 7n20 LG 57A 1U40

    u212

    Abstract: IRFR122 u210 irfr210 U2-12
    Text: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF 7Tb4142 DD1233S IHFR210/212 IRFU210/212 IRFR210/U210 IRFR122/U212 IRFR210/21 IRFU210/212 IRFR212/U212 u212 IRFR122 u210 irfr210 U2-12

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60019J International 1QR Rectifier_ IR 2 1 3 0 /IR 2 1 3 2 PHASE BRIDGE DRIVER 3 Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    OCR Scan     		PDF PD60019J IR2130/IR2132

    IRF9130 mosfet

    Abstract: IRF9130 501 mosfet transistor IRF9132 gate driver for mosfet irf9130 IRF9131 IRF9133 92CS-43394
    Text: Rugged Power MOSFETs File N um ber 2220 IR F9130, IRF9131 IRF9132, IR F9133 Avalanche-Energy-Rated P-Channel Power MOSFETs - 1 0 A Td s a n d o n = - 1 2 A , 0 . 3 0 0 - 6 0 V a n d a n d TERMINAL DIAGRAM - 1 0 0 V 0 . 4 0 0 Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF9130, IRF9131 IRF9132, IRF9133 -100V 92CS-43262 IRF9131, IRF9132 IRF9133 IRF9130 mosfet IRF9130 501 mosfet transistor gate driver for mosfet irf9130 IRF9131 92CS-43394

    Untitled

    Abstract: No abstract text available
    Text: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V


    OCR Scan     		PDF IRFR/U5410

    k3226

    Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
    Text: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.


    OCR Scan     		PDF T-39-11 4fl5545H IRF234, IRF235 k3226 LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234

    Untitled

    Abstract: No abstract text available
    Text: International \IQR}Rectifier Provisional Datasheet No. PD-9.1397 REPETITIVE AVALANCHE AND dv/dt RATED IR H N A7260 IR H N A 8260 HEXFET T R A N S IS T O R N-CHANNEL MEGA RAD HARD 200 Volt, 0.070Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology


    OCR Scan     		PDF A7260

    Untitled

    Abstract: No abstract text available
    Text: PD - 91302C International IQ R Rectifier IR F R /U 4 1 0 5 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IR FR 4105 Straight Lead (IRFU 4105) Fast Switching Fully Avalanche Rated V dss = 55V RüS(on) = 0.045Î2 Description


    OCR Scan     		PDF 91302C MS-022-BE

    Diode LT 228

    Abstract: No abstract text available
    Text: PD - 9.1365A International IQ R Rectifier IR F R /U 1 2 0 N PRELIMINARY HEXFET Power MOSFET S u rfa c e M o u n t IR F R 1 2 0 N S tra ig h t Lead (IR F U 1 2 0 N ) A d v a n c e d P ro ce ss T e c h n o lo g y F ast S w itch in g F ully A v a la n c h e R ated


    OCR Scan     		PDF

    IRF P 914 D

    Abstract: G-367 IRFF322
    Text: H E D | 4 flS S 4 S a 000=1300 S | Data Sheet No. PD-9.356D IN T E R N A T IO N A L R E C T IF I E R T - 3 9 - o T INTERNATIONAL RECTIFIER IO R HEXFET TR A N S IS TO R S IRFF3SO IRFF3S1 INJ-CHANNEL POWER MOSFETs TO-3S PACKAGE IR F F 3 2 2 IR F F 3 S 3 400 Volt, 1.8 Ohm HEXFET


    OCR Scan     		PDF G-370 IRF P 914 D G-367 IRFF322

    PC xt MOTHERBOARD CIRCUIT diagram

    Abstract: No abstract text available
    Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC5035 Dual Adjustable Voltage Regulators w/Enable Features Description • Combines switching regulator and low dropout linear regulator in single chip • Each output voltage adjustable from 1.5V to 3.6V


    OCR Scan     		PDF RC5035 RC5035 P54/P55 S30005035 PC xt MOTHERBOARD CIRCUIT diagram

    IRFPE60

    Abstract: dioda rectifier IRFPE50 IRFPE52 MOSFET 800V 10A UJ 7.8A UJ 78A dioda J2E S/IRFPE52 -250/IRFPE60
    Text: INTERNATIONAL RECTIFIER HE D I 4055452 0000044 Data Sheet No. PD-9.573A 7 ^ 3 J- i S ' I NT ERNATIONAL R E C T I FI ER INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE AND dv/dt RATED H E X F E T T R A N S IS T O R B IR F P E 5 Q IR F P E 5 2 :r N-CHANNEL


    OCR Scan     		PDF 554s2 O-247AC C-599 IRFPE50, IRFPE52 C-600 IRFPE60 dioda rectifier IRFPE50 MOSFET 800V 10A UJ 7.8A UJ 78A dioda J2E S/IRFPE52 -250/IRFPE60

    ifr220

    Abstract: No abstract text available
    Text: IRFR220, IR FU220 Semiconductor July 1999 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRFR220, FU220 IRFU220 ifr220

    IFU320

    Abstract: ifr320 fu320
    Text: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRFR320, FU320 IRFU320 IFU320 ifr320 fu320