ifu320
Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334
Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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PDF
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IRFR320,
IRFU320
TA17404.
ifu320
ifr320
irfu320
IRFR320
IRFR3209A
TA17404
TB334
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ifu320
Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404
Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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PDF
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IRFR320,
IRFU320
TA17404.
ifu320
ifr320
irfu320
TB334
IRFR320
IRFR3209A
TA17404
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ifr320
Abstract: ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334
Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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PDF
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IRFR320,
IRFU320
TA17404.
ifr320
ifu320
irfu320
IRFR320
IRFR3209A
TA17404
TB334
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ifu320
Abstract: IFR321 ifr320 IRFR322 IFU321 IRFU322 IRFR320 IRFR321 IFR322 irfu320
Text: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 S E M I C O N D U C T O R 2.6A and 3.1A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1A, 350V and 400V These are N-Channel enhancement mode silicon gate
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Original
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PDF
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IRFR320,
IRFR321,
IRFR322,
IRFU320,
IRFU321,
IRFU322
TA17404.
ifu320
IFR321
ifr320
IRFR322
IFU321
IRFU322
IRFR320
IRFR321
IFR322
irfu320
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IFU320
Abstract: ifr320 fu320
Text: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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PDF
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IRFR320,
FU320
IRFU320
IFU320
ifr320
fu320
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ifu320
Abstract: IFR321 ifr320 IRFU320
Text: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 H A R R IS SEMICONDUCTOR 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1 A, 350V and 400V These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRFR320,
IRFR321,
IRFR322,
IRFU320,
IRFU321,
IRFU322
ifu320
IFR321
ifr320
IRFU320
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Untitled
Abstract: No abstract text available
Text: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRFR320,
IRFR321,
IRFR322,
IRFU320,
IRFU321,
IRFU322
RFR322,
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ifu320
Abstract: fu320 IFR321 fr320
Text: IRFR320/321/322 IRFU320/321/322 HARRIS N-Channel Power MOSFETs Avalanche-Energy-Rated A u g u st 1991 Packages Features IR F U 3 2 0 /3 2 1 /3 2 2 T O -2 5 1 A A TOP VIEW • 2.6A and 3.1A, 350V and 400V • rDS on = 1 .8 0 fl and 2.5CI > SOURCE • Single Pulse Avalanche Energy Rated
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OCR Scan
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PDF
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IRFR320/321/322
IRFU320/321/322
IRFR320,
IRFR321,
IRFR322,
IRFU320,
IRFU321
IRFU322
ifu320
fu320
IFR321
fr320
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