IPP12 Search Results

IPP12 Price and Stock

Filter by Manufacturer


Infineon Technologies AG IPP120N08S403AKSA1 MOSFET N-CH 80V 120A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP120N08S403AKSA1	Tube	8,103		1	1 $5.34 10 $5.34 100 $5.34 1000 $5.34 10000 $5.34	Buy Now
Avnet Americas	IPP120N08S403AKSA1	Tube		12 Weeks	500	1 - 10 - 100 - 1000 $2.74052 10000 $2.67589	Buy Now
Mouser Electronics	IPP120N08S403AKSA1		1,662			1 $4.05 10 $3.18 100 $2.7 1000 $2.69 10000 $2.69	Buy Now
Newark	IPP120N08S403AKSA1	Bulk	358		1	1 $4.21 10 $3.31 100 $2.81 1000 $2.8 10000 $2.8	Buy Now
Rochester Electronics	IPP120N08S403AKSA1		655		1	1 $2.99 10 $2.99 100 $2.81 1000 $2.54 10000 $2.54	Buy Now

Chip One Stop	IPP120N08S403AKSA1	Tube	365			1 $3.88 10 $3.05 100 $2.59 1000 $2.58 10000 $2.58	Buy Now
EBV Elektronik	IPP120N08S403AKSA1			13 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPP129N10NF2SAKMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP129N10NF2SAKMA1	Tube	1,382		1	1 $2.1 10 $2.1 100 $2.1 1000 $0.66881 10000 $0.58738	Buy Now
Avnet Americas	IPP129N10NF2SAKMA1	Tube		12 Weeks	1,000	1 - 10 - 100 - 1000 $0.47775 10000 $0.46209	Buy Now
Mouser Electronics	IPP129N10NF2SAKMA1		1,200			1 $1.85 10 $1.02 100 $0.906 1000 $0.587 10000 $0.587	Buy Now
Newark	IPP129N10NF2SAKMA1	Bulk	1,227		1	1 $1.62 10 $0.936 100 $0.849 1000 $0.64 10000 $0.61	Buy Now
Chip One Stop	IPP129N10NF2SAKMA1	Tube	1,030			1 $1.43 10 $0.828 100 $0.75 1000 $0.577 10000 $0.577	Buy Now

EBV Elektronik	IPP129N10NF2SAKMA1			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPP120N20NFDAKSA1 MOSFET N-CH 200V 84A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP120N20NFDAKSA1	Tube	720		1	1 $6.66 10 $6.66 100 $6.66 1000 $2.80038 10000 $2.80038	Buy Now
Avnet Americas	IPP120N20NFDAKSA1	Tube	482		50	1 - 10 - 100 $2.25895 1000 $2.20294 10000 $2.20294	Buy Now
Mouser Electronics	IPP120N20NFDAKSA1		1,822			1 $5.69 10 $5.04 100 $2.81 1000 $2.8 10000 $2.8	Buy Now
Newark	IPP120N20NFDAKSA1	Bulk			1	1 $5.92 10 $5.24 100 $2.92 1000 $2.91 10000 $2.91	Buy Now
TME	IPP120N20NFDAKSA1		34		1	1 $5.78 10 $4.41 100 $3.29 1000 $3.29 10000 $3.29	Buy Now

Chip One Stop	IPP120N20NFDAKSA1	Tube	5,454			1 $6.08 10 $5.11 100 $2.85 1000 $2.54 10000 $2.08	Buy Now
EBV Elektronik	IPP120N20NFDAKSA1		1,000	17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPP120N20NFDAKSA1		1,000		1	1 - 10 - 100 - 1000 $3.27 10000 $3.27	Buy Now
Win Source Electronics	IPP120N20NFDAKSA1		12,131			1 - 10 - 100 $3.0384 1000 $2.7241 10000 $2.7241	Buy Now
Infineon Technologies AG IPP120N04S402AKSA1 MOSFET N-CH 40V 120A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP120N04S402AKSA1	Tube	302		1	1 $3.24 10 $2.111 100 $3.24 1000 $1.10508 10000 $1.06063	Buy Now
Mouser Electronics	IPP120N04S402AKSA1					1 $2.89 10 $1.97 100 $1.4 1000 $1.06 10000 $1.06	Get Quote
EBV Elektronik	IPP120N04S402AKSA1			13 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPP120P04P4L03AKSA2 MOSFET P-CH 40V 120A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP120P04P4L03AKSA2	Tube	208		1	1 $4.78 10 $4.78 100 $4.78 1000 $4.78 10000 $4.78	Buy Now
Mouser Electronics	IPP120P04P4L03AKSA2		2,544			1 $4.36 10 $4.1 100 $2.15 1000 $1.97 10000 $1.97	Buy Now
Newark	IPP120P04P4L03AKSA2	Bulk	940		1	1 $3.35 10 $2.85 100 $1.71 1000 $1.71 10000 $1.71	Buy Now
Rochester Electronics	IPP120P04P4L03AKSA2		295		1	1 $1.92 10 $1.92 100 $1.8 1000 $1.63 10000 $1.63	Buy Now
Chip One Stop	IPP120P04P4L03AKSA2	Tube	257			1 $3.69 10 $3.27 100 $1.89 1000 $1.89 10000 $1.89	Buy Now

EBV Elektronik	IPP120P04P4L03AKSA2			13 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more IPP12 price and stock on Findchips.com

IPP12 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
IPP120N04S3-02	Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 2.3 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.5 K/W;	Original	PDF
IPP120N04S302AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3	Original	PDF
IPP120N04S4-01	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO220-3-1	Original	PDF
IPP120N04S401AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3-1	Original	PDF
IPP120N04S4-02	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO220-3-1	Original	PDF
IPP120N04S402AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3-1	Original	PDF
IPP120N06NG	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF
IPP120N06NG	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 75A TO-220	Original	PDF
IPP120N06NGAKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 75A TO-220	Original	PDF
IPP120N06S4-02	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 2.8 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.8 K/W;	Original	PDF
IPP120N06S402AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF
IPP120N06S402AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A PG-TO220-3	Original	PDF
IPP120N06S4-03	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 3.2 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.9 K/W;	Original	PDF
IPP120N06S403AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF

IPP120N06S403AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A PG-TO220-3	Original	PDF
IPP120N06S4-H1	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 2.4 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.6 K/W;	Original	PDF
IPP120N06S4H1AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF
IPP120N06S4H1AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF
IPP120N08S403AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO220-3	Original	PDF
IPP120N08S404AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO220-3	Original	PDF

IPP12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
120N06N Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng	PDF
IPB120N06N Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10	PDF
12CN10N Abstract: No abstract text available Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N	PDF
4N06H1 Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 Text: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10	PDF
12CN10N Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)	Original	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a	PDF
4N0401 Abstract: IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2 Text: IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.5 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0401 IPI120N04S4-01 4N0401 IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2	PDF
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3	PDF
4n0603 Abstract: 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2 Text: IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.8 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0603 IPI120N06S4-03 4n0603 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2	PDF
12CN10L Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L 12CN10L D345 JESD22 PG-TO220-3 10069a IPP12CN10LG	PDF
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N	PDF
12CN10L Abstract: D345 c25 diode to220 D83a Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3 12CN10L D345 c25 diode to220 D83a	PDF
120N06N Abstract: 120N06 Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 120N06N 120N06	PDF

3PN0402 Abstract: IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package Text: IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1	Original	IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0402 IPI120N04S3-02 3PN0402 IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package	PDF
120N06N Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 68-1n 120N06N 120N06 ipp120n06ng IPP120N06N G	PDF
AE8 diode Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/ D4@A8 >= X" /- I9 6 O R >? 4@0B 8=6 B	Original	IPB120N06N IPP120N06N AE8 diode 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G	PDF
4P04L03 Abstract: IPP120P04P4L-03 IPB120P04P4L-03 Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1	Original	IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03	PDF
infineon marking TO-252 Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N	PDF
12CN10N Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G	PDF
12CN10N Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N	PDF
4n0602 Abstract: 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2 Text: IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.4 mΩ ID 120 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0602 IPI120N06S4-02 4n0602 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2	PDF
4N0402 Abstract: IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2 Text: IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.8 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0402 IPI120N04S4-02 4N0402 IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2	PDF
126N10N Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3 Text: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)	Original	IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3	PDF

Privacy Settings

IPP12 Search Results

IPP12 Price and Stock

Infineon Technologies AG IPP120N08S403AKSA1

Infineon Technologies AG IPP129N10NF2SAKMA1

Infineon Technologies AG IPP120N20NFDAKSA1

Infineon Technologies AG IPP120N04S402AKSA1

Infineon Technologies AG IPP120P04P4L03AKSA2

IPP12 Datasheets (41)

IPP12 Datasheets Context Search

120N06N

IPB120N06N

12CN10N

12CN10N

4N06H1

12CN10N

12CN10N

4N0401

Untitled

4n0603

12CN10L

Untitled

12CN10L

120N06N

3PN0402

120N06N

AE8 diode

4P04L03

infineon marking TO-252

12CN10N

12CN10N

4n0602

4N0402

126N10N