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    12CNE8N Search Results

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    12CNE8N Price and Stock

    Infineon Technologies AG IPP12CNE8N-G

    MOSFET N-CH 85V 67A TO220-3
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    DigiKey IPP12CNE8N-G Tube
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    Infineon Technologies AG IPB12CNE8N-G

    MOSFET N-CH 85V 67A D2PAK
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    DigiKey IPB12CNE8N-G Reel 1,000
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    Infineon Technologies AG IPD12CNE8N-G

    MOSFET N-CH 85V 67A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD12CNE8N-G Reel 2,500
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    12CNE8N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N

    infineon marking TO-252

    Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N
    Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    12CNE8N

    Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff
    Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IPB12CN10N PG-TO263-3 PG-TO252-3 12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff

    12CNE8N

    Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8 DS68
    Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3 12CNE8N PG-TO220-3 12CNE8 DS68

    PG-TO220-3

    Abstract: IPD12CNE8N IPP12CNE8N
    Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) 85 V 12.4 ID m: 67 A • Very low on-resistance R DS(on)


    Original     		PDF IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3 PG-TO220-3