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    IPI045N10N3 G Price and Stock

    Infineon Technologies AG IPI045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO262-3
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    DigiKey IPI045N10N3GXKSA1 Tube 894 1
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    Rochester Electronics IPI045N10N3GXKSA1 233 1
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    TME IPI045N10N3GXKSA1 1
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    EBV Elektronik IPI045N10N3GXKSA1 17 Weeks 500
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    Infineon Technologies AG IPI045N10N3GXK

    MOSFET N-CH 100V 137A TO262-3
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    Infineon Technologies AG IPI045N10N3 G

    MOSFETs N-Ch 100V 100A I2PAK-3 OptiMOS 3
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    Mouser Electronics IPI045N10N3 G 501
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    IPI045N10N3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPI045N10N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 4.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; Original PDF
    IPI045N10N3GXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO262-3 Original PDF

    IPI045N10N3 G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H- Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &   I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀-(฀ ,&* Y I9 )( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF