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Infineon Technologies AG IPI045N10N3GXKSA1 MOSFET N-CH 100V 100A TO262-3
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DigiKey	IPI045N10N3GXKSA1	Tube	894		1	1 $4.05 10 $4.05 100 $4.05 1000 $1.43388 10000 $1.43388	Buy Now
Mouser Electronics	IPI045N10N3GXKSA1					1 - 10 - 100 - 1000 $1.43 10000 $1.43	Get Quote
Rochester Electronics	IPI045N10N3GXKSA1		233		1	1 $1.59 10 $1.59 100 $1.49 1000 $1.35 10000 $1.35	Buy Now
TME	IPI045N10N3GXKSA1				1	1 $2.63 10 $1.82 100 $1.64 1000 $1.48 10000 $1.48	Get Quote
EBV Elektronik	IPI045N10N3GXKSA1			17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPI040N06N3GXKSA1 MOSFET N-CH 60V 90A TO262-3
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DigiKey	IPI040N06N3GXKSA1	Tube	500		1	1 $2.9 10 $1.879 100 $2.9 1000 $1.04976 10000 $1.04976	Buy Now
Mouser Electronics	IPI040N06N3GXKSA1		500			1 $2.62 10 $1.75 100 $1.23 1000 $0.983 10000 $0.975	Buy Now
TME	IPI040N06N3GXKSA1		87		1	1 $1.12 10 $0.88 100 $0.8 1000 $0.74 10000 $0.74	Buy Now
EBV Elektronik	IPI040N06N3GXKSA1			15 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPI041N12N3GAKSA1 MOSFET N-CH 120V 120A TO262-3
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DigiKey	IPI041N12N3GAKSA1	Tube	464		1	1 $5.65 10 $5.65 100 $5.65 1000 $2.24588 10000 $2.24588	Buy Now
Avnet Americas	IPI041N12N3GAKSA1	Tube		16 Weeks	500	1 - 10 - 100 - 1000 $1.81161 10000 $1.7667	Buy Now
Mouser Electronics	IPI041N12N3GAKSA1					1 $5.27 10 $5.27 100 $2.59 1000 $2.24 10000 $2.23	Get Quote
Rochester Electronics	IPI041N12N3GAKSA1		325		1	1 $2.5 10 $2.5 100 $2.35 1000 $2.13 10000 $2.13	Buy Now
TME	IPI041N12N3GAKSA1				1	1 $4.4 10 $3.03 100 $2.67 1000 $2.67 10000 $2.67	Get Quote
Infineon Technologies AG IPI04N03LA MOSFET N-CH 25V 80A TO262-3
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DigiKey	IPI04N03LA	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	IPI04N03LA		836		1	1 $0.5139 10 $0.5139 100 $0.4831 1000 $0.4368 10000 $0.4368	Buy Now
Rochester Electronics LLC IPI04N03LA MOSFET N-CH 25V 80A TO262-3
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DigiKey	IPI04N03LA	Tube			562	1 - 10 - 100 - 1000 $0.53 10000 $0.53	Buy Now

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IPI04 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
IPI040N06N3 G	Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 4.0 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 90.0 A;	Original	PDF
IPI040N06N3GHKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A TO262-3	Original	PDF
IPI040N06N3GXKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A	Original	PDF
IPI041N12N3 G	Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); V_DS (max): 120.0 V; R_{DS (on)} (max) (@10V): 4.1 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 120.0 A;	Original	PDF
IPI041N12N3GAKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 120A TO262-3	Original	PDF
IPI045N10N3 G	Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 4.5 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 100.0 A;	Original	PDF
IPI045N10N3GXKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO262-3	Original	PDF
IPI04CN10N G	Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 3.9 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 100.0 A;	Original	PDF
IPI04N03LA	Infineon Technologies	OptiMOS 2 Power-Transistor	Original	PDF
IPI04N03LA	Infineon Technologies	OptiMOS 2 Power-Transistor	Original	PDF

IPI04 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
040n06n Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3 Text: Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS on ,max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A previous engineering	Original	IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N IEC61249-2-21 040n06n 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3	PDF
04CN10N Abstract: IEC61249-2-21 JESD22 PG-TO220-3 Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 3.9 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB04CN10N IPI04CN10N IPP04CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 04CN10N IEC61249-2-21 JESD22 PG-TO220-3	PDF
IPI04N03LA Abstract: diode kv 1236 IPP04N03LA Text: IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPI04N03LA, IPP04N03LA PG-TO262-3-1 PG-TO220-3-1 IPI04N03LA PG-TO262-3-1 04N03LA 04N03LA diode kv 1236 IPP04N03LA	PDF
diode kv 1236 Abstract: No abstract text available Text: IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPI04N03LA, IPP04N03LA PG-TO262-3-1 PG-TO220-3-1 IPI04N03LA PG-TO262-3-1 04N03LA 04N03LA diode kv 1236	PDF
04N03L Abstract: 04N03LA Text: IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mW ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI04N03LA P-TO263-3-2 04N03L 04N03LA	PDF
Untitled Abstract: No abstract text available Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#	Original	IPB042N10N3 IPI045N10N3 IPP045N10N3	PDF
65A3 Abstract: 5E DIODE marking c-9 Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R , ? >=1G, & P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & I9 P ' 3 81>>5< >? A=1<<5E5<	Original	IPB037N06N3 IPI040N06N3 IPP040N06N3 65A3 5E DIODE marking c-9	PDF
Untitled Abstract: No abstract text available Text: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)	Original	IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3	PDF
Untitled Abstract: No abstract text available Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G 3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&	Original	IPB037N06N3 IPI040N06N3 IPP040N06N3 A53C96931C9? 381A75à A1C54 C1A75Cà 931C9?	PDF
04N03LA Abstract: SMD MARKING CODE transistor TO262-3-1 IPB04N03LA IPI04N03LA IPP04N03LA d55a1 Text: IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4181 04N03LA 04N03LA SMD MARKING CODE transistor TO262-3-1 IPB04N03LA IPI04N03LA IPP04N03LA d55a1	PDF
to220 pcb footprint Abstract: to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3 Text: IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS 25 V • Ideal for high-frequency dc/dc converters R DS on ,max 4.2 m: ID 80 A • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPI04N03LA, IPP04N03LA PG-TO262-3 PG-TO220-3 IPI04N03LA 04N03LA to220 pcb footprint to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3	PDF
04N03LA Abstract: IPB04N03LA IPI04N03LA IPP04N03LA D55 SMD CODE MARKING Text: IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4181 04N03LA 04N03LA IPB04N03LA IPI04N03LA IPP04N03LA D55 SMD CODE MARKING	PDF
041N12N Abstract: 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G Text: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)	Original	IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 041N12N 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G	PDF
Untitled Abstract: No abstract text available Text: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 120 V RDS(on),max (TO-263) 3.8 mW ID 120 A • Very low on-resistance R DS(on)	Original	IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3	PDF

04CN10N Abstract: JESD22 PG-TO220-3 IPB04CN10N G 04CN10 Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO 263) 3.9 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)	Original	IPB04CN10N IPI04CN10N IPP04CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 04CN10N 04CN10N JESD22 PG-TO220-3 IPB04CN10N G 04CN10	PDF
Untitled Abstract: No abstract text available Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G 3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀-(฀ ,&* Y I9 )( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#	Original	IPB042N10N3 IPI045N10N3 IPP045N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9?	PDF
04N03LA Abstract: IPB04N03LA IPI04N03LA IPP04N03LA Text: IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level	Original	IPB04N03LA IPI04N03LA, IPP04N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4181 04N03LA 04N03LA IPB04N03LA IPI04N03LA IPP04N03LA	PDF
045n10n Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10	PDF
040n06n Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3 Text: IPB037N06N3 G Type IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 3.7 mΩ ID 90 A • Very low on-resistance R DS(on)	Original	IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N PG-TO263-3 040n06n 037N06N 040n06 d90 smd JESD22 PG-TO220-3	PDF
diode kv 1236 Abstract: 04N03L Text: IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPI04N03LA, IPP04N03LA PG-TO262-3-1 PG-TO220-3-1 IPI04N03LA PG-TO262-3-1 Q67042-S4183 Q67042-S4182 diode kv 1236 04N03L	PDF
Untitled Abstract: No abstract text available Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G 2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ +&1 Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#	Original	IPB04CN10N IPI04CN10N IPP04CN10N 492C86à E2C86Eà	PDF
marking 6d Abstract: IPP04CN10N G diode 6e Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' I; )( K +&1 Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#	Original	IPB04CN10N IPI04CN10N IPP04CN10N marking 6d IPP04CN10N G diode 6e	PDF
S 170 MOSFET TRANSISTOR Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and	Original	B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book	PDF
7408, 7404, 7486, 7432 Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404 Text: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers	OCR Scan	TGC100 20-mA Sink/12mA TDB10LJ 120LJ TDC11LJ TDN11LJ 100MHz 7408, 7404, 7486, 7432 RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404	PDF

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IPI04 Search Results

IPI04 Price and Stock

Infineon Technologies AG IPI045N10N3GXKSA1

Infineon Technologies AG IPI040N06N3GXKSA1

Infineon Technologies AG IPI041N12N3GAKSA1

Infineon Technologies AG IPI04N03LA

Rochester Electronics LLC IPI04N03LA

IPI04 Datasheets (10)

IPI04 Datasheets Context Search

040n06n

04CN10N

IPI04N03LA

diode kv 1236

04N03L

Untitled

65A3

Untitled

Untitled

04N03LA

to220 pcb footprint

04N03LA

041N12N

Untitled

04CN10N

Untitled

04N03LA

045n10n

040n06n

diode kv 1236

Untitled

marking 6d

S 170 MOSFET TRANSISTOR

7408, 7404, 7486, 7432