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    Infineon Technologies AG IPB05CN10N-G

    MOSFET N-CH 100V 100A D2PAK
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    DigiKey IPB05CN10N-G Reel 1,000
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    • 10000 $2.12112
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    IPB05CN10N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB05CN10NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 100A TO263-3 Original PDF
    IPB05CN10N G Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A TO263-3 Original PDF
    IPB05CN10NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF

    IPB05CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G  2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ -&) Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N 492C86à E2C86Eà PDF

    05CN10N

    Abstract: IPP05CN10N JESD22 PG-TO220-3
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N JESD22 PG-TO220-3 PDF

    IPP05CN10N

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N 8976BF6 PDF

    05CN10N

    Abstract: 05cn10 IPB05CN10N IPP05CN10N JESD22 PG-TO220-3
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N 05cn10 JESD22 PG-TO220-3 PDF

    05CN10N

    Abstract: IEC61249-2-21 IPP05CN10N JESD22 PG-TO220-3 DIODE D100 to220
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N IEC61249-2-21 JESD22 PG-TO220-3 DIODE D100 to220 PDF

    05CN10N

    Abstract: 05cn10 IPP05CN10N JESD22 PG-TO220-3
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N 05cn10 JESD22 PG-TO220-3 PDF

    05CN10N

    Abstract: 05cn10 IPB05CN10NG
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 05CN10N PG-TO262-3 05CN10N 05cn10 IPB05CN10NG PDF

    05CN10N

    Abstract: 05cn10
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 05CN10N PG-TO262-3 05CN10N 05cn10 PDF

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J PDF

    TCA 700 y

    Abstract: BTS 7930 ICE1PS02 igbt eupec TDA16846 equivalent tda16846 TLE72xx ICE1PS01 tda16846 p tca 765
    Text: ООО «ЭФО» ОФИЦИАЛЬНЫЙ ДИСТРИБЬЮТОР Infineon Technologies Силовые полупроводниковые компоненты Инфинеон от производителя №1 в мире w w w. i n f i n e o n . c o m


    Original     		SDB06S60 SDB02S60 SDB04S60 SDB05S60 SDB12S60 SDB08S60 SDB10S60 TCA 700 y BTS 7930 ICE1PS02 igbt eupec TDA16846 equivalent tda16846 TLE72xx ICE1PS01 tda16846 p tca 765 PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP PDF