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    KEMET Corporation HT05CN101KN

    CAP CER 100PF 100V C0G/NP0 RAD
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    KEMET Corporation HT05CN103KN

    CAP CER 10000PF 100V C0G/NP0 RAD
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    KEMET Corporation HT05CN101JN

    CAP CER 100PF 100V NP0 RADIAL
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    KEMET Corporation HT05CN102KN

    CAP CER 1000PF 100V NP0 RADIAL
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    KEMET Corporation HT05CN102JN

    CAP CER 1000PF 100V C0G/NP0 RAD
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    05CN10 Datasheets Context Search

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    05CN10L

    Abstract: 05cn10 IPP05CN10L G
    Text: 05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP05CN10L PG-TO220-3 05CN10L 05CN10L 05cn10 IPP05CN10L G

    05CN10N

    Abstract: IPP05CN10N JESD22 PG-TO220-3
    Text: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N JESD22 PG-TO220-3

    05CN10N

    Abstract: 05cn10 IPB05CN10N IPP05CN10N JESD22 PG-TO220-3
    Text: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N 05cn10 JESD22 PG-TO220-3

    05CN10N

    Abstract: IEC61249-2-21 IPP05CN10N JESD22 PG-TO220-3 DIODE D100 to220
    Text: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N IEC61249-2-21 JESD22 PG-TO220-3 DIODE D100 to220

    05cn10l

    Abstract: JESD22 PG-TO220-3
    Text: 05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP05CN10L PG-TO220-3 05CN10L 05cn10l JESD22 PG-TO220-3

    05CN10N

    Abstract: 05cn10 IPP05CN10N JESD22 PG-TO220-3
    Text: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N 05cn10 JESD22 PG-TO220-3

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    05CN10N

    Abstract: 05cn10 IPB05CN10NG
    Text: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 05CN10N PG-TO262-3 05CN10N 05cn10 IPB05CN10NG

    05CN10N

    Abstract: 05cn10
    Text: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 05CN10N PG-TO262-3 05CN10N 05cn10