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    INGAAS PHOTODIODE ARRAY CHIP Search Results

    INGAAS PHOTODIODE ARRAY CHIP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS12V65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 12 A, DFN8×8 Visit Toshiba Electronic Devices & Storage Corporation

    INGAAS PHOTODIODE ARRAY CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PIN photodiode crosstalk

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E01 PIN photodiode crosstalk

    InGaas PIN photodiode chip

    Abstract: G8909-01 KIRD1053E02 SE-171
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E02 InGaas PIN photodiode chip G8909-01 KIRD1053E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E02

    DWDM AWG

    Abstract: InGaAs photodiode array chip
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E02 DWDM AWG InGaAs photodiode array chip

    photo diode array InGaAs

    Abstract: G8909-01 InGaAs photodiode array chip KIRD1053E02 SE-171
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter


    Original     		PDF G8909-01 SE-171 KIRD1053E02 photo diode array InGaAs G8909-01 InGaAs photodiode array chip KIRD1053E02

    InGaAs photodiode array chip

    Abstract: G8909-01 KIRD1053E01 SE-171 50 um photodiode
    Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance l DWDM monitor with AWG • General ratings Parameter Active area


    Original     		PDF G8909-01 SE-171 KIRD1053E01 InGaAs photodiode array chip G8909-01 KIRD1053E01 50 um photodiode

    g890901

    Abstract: G8909-01
    Text: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value


    Original     		PDF G8909-01 KIRD1053E03 g890901 G8909-01

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value


    Original     		PDF G8909-01 KIRD1053E03

    InGaAs photodiode array chip

    Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
    Text: InGaAs linear image sensors G11135 series Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,


    Original     		PDF G11135 SE-171 KMIR1018E06 InGaAs photodiode array chip charge amplifier array Image Sensors G11135-512DE

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E02

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E01

    G8053

    Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
    Text: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G8050 G8053 SE-171 KMIR1009E03 G8053-512R G8053-512S G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S

    C7557

    Abstract: C8061-01 C8062-01 G9201 G9202 G9203 G9203-256D G9204 G9204-512D
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E02 C7557 C8061-01 C8062-01 G9202 G9203 G9203-256D G9204-512D

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 B1201, KMIR1011E11

    G9204

    Abstract: C7557 C8061-01 G9201 G9202 G9203 G9203-256D G9204-512D infrared cmos digital image Photodiode Array 32 element
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E05 C7557 C8061-01 G9202 G9203 G9203-256D G9204-512D infrared cmos digital image Photodiode Array 32 element

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E03

    detector ingaas

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E09 detector ingaas

    CDS light sensor

    Abstract: G8050 G8051 G8052 G8052-256D G8053 G8053-512D infrared cmos digital image
    Text: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G8050 G8053 SE-171 KMIR1009E04 CDS light sensor G8051 G8052 G8052-256D G8053-512D infrared cmos digital image

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E04

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E05

    transistor C4159

    Abstract: No abstract text available
    Text: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a


    OCR Scan     		PDF G6891, G6893 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, transistor C4159

    C7557 Software

    Abstract: high frequency linear cmos IMAGE SENSOR G7233 INGaAS CCD long range detector in circuit
    Text: InGaAs Linear Image Sensors_ Spectral Response Range: 0 .9 to 2 .6 jim Incorporating InGaAs array C-MOS readout chip in one package The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel


    OCR Scan     		PDF G7231/G7233 C7557 C7557 Software high frequency linear cmos IMAGE SENSOR G7233 INGaAS CCD long range detector in circuit