PIN photodiode crosstalk
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
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KIRD1053E01
PIN photodiode crosstalk
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G8909-01
Abstract: KIRD1053J02 1na100
Text: PHOTODIODE InGaAs PINフォトダイオードアレイ G8909-01 DWDMモニタ用フォトダイオードアレイ 特長 用途 l 250 µmピッチ, 40 ch 並列出力 l 低クロストーク l 高いチップ位置精度: ±0.05 mm l AWG付DWDMモニタ • 一般定格
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G8909-01
KIRDB0268JA
KIRDA0158JB
435-85581126-1TEL
434-3311FAX
KIRD1053J02
G8909-01
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1na100
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InGaas PIN photodiode chip
Abstract: G8909-01 KIRD1053E02 SE-171
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
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KIRD1053E02
InGaas PIN photodiode chip
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g890901
Abstract: G8909-01
Text: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value
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G8909-01
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
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DWDM AWG
Abstract: InGaAs photodiode array chip
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
SE-171
KIRD1053E02
DWDM AWG
InGaAs photodiode array chip
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Untitled
Abstract: No abstract text available
Text: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用
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Abstract: No abstract text available
Text: InGaAs PINフォトダイオードアレイ G8909-01 DWDMモニタ用フォトダイオードアレイ 特長 用途 250 µmピッチ, 40 ch 並列出力 低クロストーク AWG付DWDMモニタ 高いチップ位置精度: ±0.05 mm 構成 項目 仕様
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G8909-01
KIRDB0267JA
KIRDB0268JA
KIRDB0269JB
KIRDA0158JB
KIRD1053J03
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photo diode array InGaAs
Abstract: G8909-01 InGaAs photodiode array chip KIRD1053E02 SE-171
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
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KIRD1053E02
photo diode array InGaAs
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InGaAs photodiode array chip
Abstract: G8909-01 KIRD1053E01 SE-171 50 um photodiode
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance l DWDM monitor with AWG • General ratings Parameter Active area
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G8909-01
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InGaAs photodiode array chip
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Selection guide
Abstract: No abstract text available
Text: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high
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KIRD0005E02
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Untitled
Abstract: No abstract text available
Text: セレクションガイド 2015.6 InGaAs フォトダイオード 低 ノイ ズ で 優 れ た 周 波 数 特 性 の 近 赤 外 線 検 出 素 子 InGaAs PHOTODIODE 当社独自の化合物半導体プロセス技術を生かしたInGaAsフォトダイオードは
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Selection guide
Abstract: Infrared detectors P13243-011MA
Text: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,
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KIRD0001E08
Selection guide
Infrared detectors
P13243-011MA
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value
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