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    G8050 Search Results

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    G8050 Price and Stock

    Rochester Electronics LLC RURG8050

    DIODE AVALANCHE 500V 80A TO247-2
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    Panasonic Electronic Components ECW-FG80505J

    CAP FILM 5.0UF 800VDC RADIAL
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    Mouser Electronics ECW-FG80505J
    • 1 $3.34
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    Master Electronics ECW-FG80505J 300
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    Panasonic Electronic Components ECW-FG80505JA

    CAP FILM 5.0UF 800VDC RADIAL
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    Mouser Electronics ECW-FG80505JA
    • 1 $3.51
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    Master Electronics ECW-FG80505JA
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    Festo FENG-80-50-KF

    GUIDE UNIT
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    DigiKey FENG-80-50-KF Bulk 1
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    Festo FENG-80-500-KF

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    DigiKey FENG-80-500-KF Bulk 1
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    G8050 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    G8050 GTM NPN EPITAXIAL TRANSISTOR Original PDF
    G8050 Hamamatsu InGaAs linear image sensor, Image sensor for DWDM wavelength monitor Original PDF
    G8050-256R Hamamatsu InGaAs linear image sensor, Image sensor for DWDM wavelength monitor Original PDF
    G8050-256R Hamamatsu Photonics InGaAs Linear image sensor Original PDF
    G8050-256S Hamamatsu InGaAs linear image sensor, Image sensor for DWDM wavelength monitor Original PDF
    G8050-256S Hamamatsu Photonics InGaAs Linear image sensor Original PDF
    G8050S GTM NPN EPITAXIAL TRANSISTOR Original PDF

    G8050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G8053

    Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
    Text: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original
    PDF G8050 G8053 SE-171 KMIR1009E03 G8053-512R G8053-512S G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S

    G8050

    Abstract: G8550
    Text: CORPORATION G8050 ISSUED DATE :2004/12/27 REVISED DATE : N P N E P ITAX IA L T R AN S IS T O R Description The G8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features *High Collector current IC: 1.5A *Complementary to G8550


    Original
    PDF G8050 G8050 G8550 G8550

    G8050S

    Abstract: G8550S
    Text: CORPORATION G8050S ISSUED DATE :2004/04/22 REVISED DATE :2004/11/29B N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio


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    PDF G8050S 2004/11/29B G8050S 700mA G8550S G8550S

    G8050S

    Abstract: G8550S TANSISTOR
    Text: CORPORATION G8550S ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B PNP EPITAXIAL PLANAR TANSISTOR Description The G8550S is designed for general purpose amplifier applications. Features * High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S


    Original
    PDF G8550S 2004/11/29B G8550S 150mA G8050S G8050S TANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: NEW IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensors for DWDM monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier made up of C-MOS


    Original
    PDF G8050 G8053

    CDS light sensor

    Abstract: G8050 G8051 G8052 G8052-256D G8053 G8053-512D infrared cmos digital image
    Text: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original
    PDF G8050 G8053 SE-171 KMIR1009E04 CDS light sensor G8051 G8052 G8052-256D G8053-512D infrared cmos digital image

    G8550

    Abstract: G8050
    Text: CORPORATION G8550 ISSUED DATE :2004/12/27 REVISED DATE : P N P E P ITAX I A L T R AN S IS T O R Description The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features *High Collector current IC: 1.5A


    Original
    PDF G8550 G8550 G8050 G8050

    G8051-512R

    Abstract: C8060 C8061 C8062 G8050-256R G8050-256S G8051-512S G8052-256R G8052-256S G8053-512R
    Text: IMAGE SENSOR InGaAs multichannel detector head C8060, C8061, C8062 Designed for InGaAs linear image sensor C8060, C8061, C8062 series are high sensitivity multichannel detector heads for use with InGaAs linear image sensors. C8060 is designed for the non-cooled InGaAs linear image sensors, while C8061 and C8062 for the thermoelectrically cooled InGaAs


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    PDF C8060, C8061, C8062 C8062 C8060 C8061 G8051-512R C8060 G8050-256R G8050-256S G8051-512S G8052-256R G8052-256S G8053-512R

    ICX655AL

    Abstract: KAF-4202 ICX655ALA CCD47-20 KDS88 CCD-42-40 CCD133ADC IS230-1340-75S-R29-L14 CCD44-82 CCD230-42
    Text: SO C I ATI O IN DU ST RY AU T RoHS Compliant ISO 9001 Certified NT ME RN VE GO AS INTERCONNECTION SPECIALISTS G IN ANDON TED IMA MA G O N EDUCATION Image Sensor to Socket Cross Reference Altasens Altasens Part Number 2460-1280X720 2460-1280X1024 2462-1280X720


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    PDF 2460-1280X720 2460-1280X1024 2462-1280X720 2462-1280X1024 2463-1280X720 2463-1280X1024 2560-1280X720 2560-1280X1024 2562-1280X720 2562-1280X1024 ICX655AL KAF-4202 ICX655ALA CCD47-20 KDS88 CCD-42-40 CCD133ADC IS230-1340-75S-R29-L14 CCD44-82 CCD230-42

    Untitled

    Abstract: No abstract text available
    Text: InGaAs multichannel detector head C8061-01 C8062-01 Designed for InGaAs linear image sensor The C8061/C8062-01 are multichannel detector heads for use with InGaAs linear image sensors. The C8061-01 is designed for the one-stage TE-cooled InGaAs linear image sensors and the C8062-01 for two-stage TE-cooled InGaAs linear image


    Original
    PDF C8061-01 C8062-01 C8061/C8062-01 C8061-01 C8062-01 C8061-01: C8062-01: B1201,

    IC 4435

    Abstract: CI 4835 b 4435 ic CI 4835 d Ci 2035 C8D15DS29D1 G-80A hp 3760 C8D20DS29C2 C8D10DS29C2
    Text: ThomasiBetts _ Cardedge Cantilever Beam-Dip Solder .100" CENTER-TO-CENTER .200" ROW-TO-ROW DIP SOLDER TAILS .300" CARD SLOT DEPTH TO LR49571 E60980 P h y s ic a l P r o p e r t ie s I n su latio n R e s is t a n c e : 5000 megohms minimum. I n ser tio n /W ith d r a w a l F o r c e D a u g h t e r C a r d :


    OCR Scan
    PDF LR49571 E60980 C8D20DS29A3 C8D22DS29A3 C8D25DS29A3 C8028DS29A3 C8D30DS2aA3 C8D31DS29A3 C8D35DS29A3 C8D36DS29A3 IC 4435 CI 4835 b 4435 ic CI 4835 d Ci 2035 C8D15DS29D1 G-80A hp 3760 C8D20DS29C2 C8D10DS29C2