IS606
Abstract: Isocom Components IS606 rgk 13 VAK* IS605 E91231 IS605 light activated scr VTM resistor 56k
Text: IS605, IS606 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 1.2 DESCRIPTION The IS605, IS606 are optically coupled isolators consisting of infrared light emitting diode and a
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IS605,
IS606
E91231
IS606
DB92481m-AAS/A1
Isocom Components IS606
rgk 13
VAK* IS605
E91231
IS605
light activated scr
VTM resistor 56k
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions
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H11J1-H11J5
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H74C2
Abstract: optoisolator TTL
Text: Optoisolator Specifications H74C1, H74C2 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR TTL Interface T h e H74C1 and H74C2 are gallium arsenide infrared em itting diodes cou p led with light activated silicon controlled rectifiers. They are specifically designed to
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H74C1,
H74C2
H74C1
H74C2
74H00
74S00
optoisolator TTL
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PDF
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H11C2-H11C3
Abstract: Opto-isolator 50V-RGK
Text: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also
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H11C1,
H11C2,
H11C3
H11C3
H11C2-H11C3
Opto-isolator
50V-RGK
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PDF
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MCS2401
Abstract: MCS21 LTT scr
Text: E SOLID STATE Optoelectronic specifications -r~4i-S7 Photon Coupled Isolator MCS21, MCS2401 GaAs Infrared Emitting Diode & Light Activated SCR The G E Solid S tate MCS21 and MCS2401 consist o f a gallium arsenide, infrared«sm itting diode coupled w ith a light activated
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MCS21,
MCS24Ã
MCS21
MCS2401
E51868
33nVW/Â
LTT scr
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4W0E
Abstract: SMEW H11C4 H11C5-H11C6 VP243 GE SCR 1000 H11C5 H11C6 400v transistor the light activated scr
Text: G E SOLID STATE 01 DE J 3ñ7SDñl DOlTOfl b | Optoelectronic Specifications " T -w -s 7 Photon Coupled Isolator H11C4 Ga As Infrared Emitting Diode & Light Activated SCR The GE Solid State H 11C4, H 11C5 and H11C6 are gallium arsenide, infrared emitting diodes coupled with light activated silicon con- j
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3fl75DÃ
H11C4
H11C5,
H11C6^
H11C4,
H11C5
33mW/Â
4W0E
SMEW
H11C4
H11C5-H11C6
VP243
GE SCR 1000
H11C6
400v transistor
the light activated scr
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PDF
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C3012
Abstract: MOC3010 M0c3009-M0c3012 MOC3009 MOC3012 triac 289
Text: SOLID STATE 01 optoelectronic Specifications »E|3ö7S0äl D Dim* Photon Coupled Isolator M 0c3009-M0c3012 G a As Infrared Em itting D iode & Light Activated Triac D river The GE Solid State M0c3009-M0c3012 series consists of a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch,
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MOC3009-MC
C3012
M0c3009-M0c3012
MOC3009
MOC3010
MOC301I
MOC3012
C3012
triac 289
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PDF
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13001 TRANSISTOR
Abstract: CNY30 CNY30-CNY34 GE SCR 1000 1000C AN006 CNY34 INS080I4
Text: G E SOLI» STATE 01 Optoelectronic Specifications DE|3fl750fll OanflBG 0 | T ^ h 3-7 Photon Coupled Isolator CNY30-CNY34 Ga As Infrared Emitting Diode & light Activated SCR The GE Solid State CNY30 and CNY34 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con
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3fl750Ã
T-V/-77
CNY30-CNY34
CNY30
CNY34
220VAC
13001 TRANSISTOR
CNY30-CNY34
GE SCR 1000
1000C
AN006
INS080I4
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PDF
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dual infrared diode
Abstract: GE3011 GE-301
Text: Generic Optolsolator Specifications _ G E 3 0 0 9 -G E 3 0 1 2 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e GE3009>GE30r.2 series consists o f a gallium arsenide, infrared em itting diode coupled with a light activated silicon bilateral switch, w hich functions
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GE3009
GE30r
GE3010
GE3011
GE3012
dual infrared diode
GE-301
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PDF
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M0C3020
Abstract: M0c3020-M0c3023 0C302
Text: Optoisolator Specifications _ M0c3020-M0c3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M 0c3020-M 0c3023 series c o n sists o f a gallium a rsen id e, infrared e m ittin g d io d e c o u p le d with a light activated silic o n bilateral switch,
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M0c3020-M0c3023
0c3020-M
0c3023
M0C3020
M0c3020-M0c3023
0C302
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PDF
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4n4001
Abstract: 4N4U 4N40 4N39 GE SCR 1000
Text: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con
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3fl750fll
220VAC
the4N40
4n4001
4N4U
4N40
4N39
GE SCR 1000
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PDF
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moc3020 triac driver
Abstract: MOC302I M0c3020-M0c3023 OPTOISOLATOR TRIAC DRIVER
Text: Optoisolator Specifications M 0c3020-M 0c3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M O C3020-M CC3023 series consists o f a gallium arsenide, in fra re d em itting diode coupled with a light activated silicon bilateral switch,
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0c3020-M
0c3023
C3020-M
CC3023
MOC3020
MOC302I
MOC3022
MOC3023
moc3020 triac driver
M0c3020-M0c3023
OPTOISOLATOR TRIAC DRIVER
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Untitled
Abstract: No abstract text available
Text: Oplolsolator Specifications_ M 0c3009-M 0c3012 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e MOC3009-MOC3012 series consists o f a gallium arsen id e, in frared em itting d io d e co u p led with a light activated silicon bilateral switch,
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0c3009-M
0c3012
MOC3009-MOC3012
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PDF
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1J2H
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions
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OCR Scan
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H11J1-H11J5
1J2H
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PDF
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Untitled
Abstract: No abstract text available
Text: Generic Optoisolator Specifications_ G E3020-G E 3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e GE3020-GE3023 series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led with a light activated silicon bilateral switch, w hich functions
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E3020-G
GE3020-GE3023
GE3020
GE3021
GE3022
GE3023
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PDF
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Untitled
Abstract: No abstract text available
Text: European “Pro Electron” Registered T y p e s _ CNY30, CNY34 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T h e CNY30 a n d CNY34 consist o f a gallium arsen id e, in fra re d em itting d io d e coupled with a light activated silicon
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CNY30,
CNY34
CNY30
CNY34
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PDF
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H11M3
Abstract: H11M4 diODE 1k
Text: ÖUALITY TECHNOLOGIES CORP S7E D Optoisolator Specifications. b * i 0 • H11M3, H11M4 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR The HI 1M3 and HI 1M4 contain a gallhim-aluminum-arsenide, infrared emitting diode coupled to a unique high voltage silicon controlled
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H11M3,
H11M4
74bbflSl
H11M3
H11M4
diODE 1k
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PDF
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GE3021
Abstract: GE3023 GE3022 GE3020-GE3023 GE3020 triac light switch
Text: G E SOLI» STATE 01 DE|3fl7SDñl GDnflSt 7 Optoelectronic Specifications- -r-WI-81 Photon Coupled Isolator GE3020-GE3023 Ga As Infrared Emitting Diode & Light Activated Triac Driver
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GE3020-GE3023
GE3020-GE3023
GE3020
GE3021
GE3022
GE3023
triac light switch
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PDF
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Untitled
Abstract: No abstract text available
Text: O ptoisolator S p e c ific a tio n s _ M 0c3009-M 0c3012 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M 0c3 0 0 9 -M 0 c3 0 1 2 series c o n sists o f a gallium a rsen id e, infrared e m ittin g d io d e c o u p le d with a ligh t activated silico n bilateral switch,
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0c3009-M
0c3012
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PDF
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mcs2
Abstract: S2400M
Text: Generic Optoisolator Specifications M C S2 , M CS2400 Optoisolator G aA s Infrared Emitting Diode and Light Activated S C R T h e MCS2 a n d MCS2400 consist o f a gallium arsen id e, in frared em itting d io d e coupled with a light activated silicon co n tro lled rectifier in a dual in-line package. T h e se devices
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CS2400
MCS2400
mcs2
S2400M
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PDF
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Untitled
Abstract: No abstract text available
Text: European “Pro Electron" Registered T y p e s _ CNY30, CNY34 Optoisofator Ga As Infrared Emitting Diode and Light Activated SCR SVMBOL C H K INFRARED EM ITTIN G DIODE Power Dissipation -55°C to 50°C *100 Forward Current (Continuous) 60 (-55°C to 50°C)
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CNY30,
CNY34
CXY34
CNY34
100/i.
220VA
CNY30
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PDF
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Untitled
Abstract: No abstract text available
Text: G e n e ric O ptolsolator Specification s GE3009-GE3012 Optoisolator G aAs Infrared Emitting Diode and Light Activated Triac Driver T h e GE3009-GE3012 series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a light activated silicon bilateral switch, w hich fun ctio n s
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OCR Scan
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GE3009-GE3012
GE3009-GE3012
GE3009
GE3010
GE3011
GE3012
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PDF
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MCS2401
Abstract: No abstract text available
Text: Generic Optoisolator Specifications M CS21, MCS2401 Optoisolator G a A s Infrared Emitting Diode and Light Activated S C R T h e MCS21 a n d MCS2401 consist o f a gallium arsenide, in fra re d em itting d io d e co u p led with a light activated silicon co n tro lled rectifier in a dual in-line package. T h e se devices
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OCR Scan
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MCS2401
MCS21
MCS2401
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PDF
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27K12
Abstract: CS2400
Text: Generic Optoisolator Specifications M CS2, M CS2400 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T h e MCS2 a n d MCS2400 consist o f a gallium arsen id e, in fra re d em itting d io d e co u p led w ith a light activated silicon c o n tro lle d rectifier in a dual in-line package. T h e se devices
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OCR Scan
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MCS2400
E51868
0110b
MCS2400
27K12
CS2400
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PDF
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