Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INFINION FET Search Results

    INFINION FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
    AD820ARMZ-R7 Analog Devices FET INPT, SINGLE SPLY AMP Visit Analog Devices Buy
    ADA4817-1ARDZ-R7 Analog Devices High Speed FET Input Amp Visit Analog Devices Buy
    AD8220WARMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8220BRMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy

    INFINION FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM7805 smd

    Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PDF PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 smd LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds

    LM7805 smd

    Abstract: LM7805 smd transistor marking C14
    Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency


    Original     		PDF PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 LM7805 smd LM7805 smd transistor marking C14

    creative 5.1 audio circuit

    Abstract: p07003 BOXD815EEAA D815EEA P070031 PBA FET A10379-402 a10380 CMOS BATTERY P07-0031
    Text: Product Change Notification # 101471-00 Information in this document is provided in connection with Intelâ â products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s


    Original     		PDF BOXD815EEAA BOXD815EEAAL A10380-402 A10378-402 A10380-403 A10378-403 creative 5.1 audio circuit p07003 BOXD815EEAA D815EEA P070031 PBA FET A10379-402 a10380 CMOS BATTERY P07-0031

    LM7805 M SMD

    Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PDF PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1

    LM7805 smd 8 pin

    Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the DCS band. Full gold metallization ensures


    Original     		PDF PTFA181001E PTFA181001F 100-watt, H-30248-2 H-31248-2 1880dangerous

    R80515 evatronix

    Abstract: R80515 Evatronix SAB80C537 80C31 ASM51 16 BIT ALU design with verilog hdl code
    Text: R80515 8-bit Microcontroller Megafunction General Description The R80515 is a fast, single-chip, 8-bit microcontroller that executes all ASM51 instructions. It has the same instruction set as the 80C31, but executes operations an average of 8 times faster.


    Original     		PDF R80515 R80515 ASM51 80C31, 16-bit R80515 evatronix Evatronix SAB80C537 80C31 16 BIT ALU design with verilog hdl code

    elna capacitor 22uf

    Abstract: No abstract text available
    Text: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the


    Original     		PDF PTFA041001E PTFA041001F 100-watt, H-30248-2 PTFA041001FT H-31248-2 elna capacitor 22uf

    LM7805

    Abstract: H-30265-2 lm 2094
    Text: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210701E PTFA210701E 70-watt, H-30265-2 PTFA210701F* H-31265-2 LM7805 H-30265-2 lm 2094

    PTFA043002

    Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010

    PTFA082201E

    Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt RO4350 elna 50v elna capacitor BCP56 LM7805 ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor

    ptfa192001e

    Abstract: PTFA192001E V4 LM7805 PTFA192001F RO4350 PCS3475CT-ND
    Text: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications


    Original     		PDF PTFA192001E PTFA192001F PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2 PTFA192001E V4 LM7805 RO4350 PCS3475CT-ND

    a1807

    Abstract: PTFA180701E PTF180701E A3563 1800 ldmos BCP56 LM7805 PTFA180701F RO4350 H-36265-2
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with


    Original     		PDF PTFA180701E PTFA180701F PTFA180701E PTFA180701F 70-watt H-36265-2 H-37265-2 a1807 PTF180701E A3563 1800 ldmos BCP56 LM7805 RO4350 H-36265-2

    10 ohms potentiometer

    Abstract: 08051J100GBTTR BCP56 LM7805 PTFA182001E RO4350
    Text: PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output


    Original     		PDF PTFA182001E PTFA182001E 200-watt 10 ohms potentiometer 08051J100GBTTR BCP56 LM7805 RO4350

    ceramic capacitor 103 z 2kv

    Abstract: No abstract text available
    Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and


    Original     		PDF PTFA091201E PTFA091201F 120-watt, ceramic capacitor 103 z 2kv

    A19045

    Abstract: No abstract text available
    Text: PTFA190451E PTFA190451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA190451E PTFA190451F 45-watt, H-30265-2 H-31265-2 A19045

    PTFA043002E

    Abstract: SCHEMATIC DIAGRAM 3.3kv
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold


    Original     		PDF PTFA043002E PTFA043002 300-watt, PTFA043002E SCHEMATIC DIAGRAM 3.3kv

    8051 address decoder

    Abstract: R80515 evatronix int6 in 8051 R80515 80C31 ASM51 intel 8051 OPCODES
    Text: R80515 8-bit RISC-like Microcontroller Core General Description The R80515 is a fast, single-chip, 8-bit microcontroller that executes all ASM51 instructions. It has the same instruction set as the 80C31, but executes operations an average of 8 times faster.


    Original     		PDF R80515 R80515 ASM51 80C31, 8051 address decoder R80515 evatronix int6 in 8051 80C31 intel 8051 OPCODES

    BCP56

    Abstract: LM7805 PTFA190451E PTFA190451F RO4350
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2 BCP56 LM7805 RO4350

    LM7805

    Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
    Text: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the


    Original     		PDF PTFA181001GL PTFA181001HL PTFA181001GL 100-watt LM7805 elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 ELNA capacitor 100 uf 50v

    a2324

    Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
    Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PDF PTFA192401E PTFA192401F PTFA192401E PTFA192401F 240-watt H-36260-2 H-37260-2 a2324 RF35 RO4350 BCP56 LM7805 PTFA192401F V4

    Untitled

    Abstract: No abstract text available
    Text: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PDF PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2

    9of11

    Abstract: No abstract text available
    Text: PTFA080551E PTFA080551F Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz Description The PTFA080551E and PTFA080551F are 55-watt, internally matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz band. Thermally-enhanced


    Original     		PDF PTFA080551E PTFA080551F 55-watt, CDMA2000 9of11