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    INFINEON TECHNOLOGIES TRANSISTOR 4 GHZ Search Results

    INFINEON TECHNOLOGIES TRANSISTOR 4 GHZ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    INFINEON TECHNOLOGIES TRANSISTOR 4 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF POWER TRANSISTOR NPN 3GHz

    Abstract: NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , A u g . 2 0 0 1 BGB 540 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF D-81541 BGB540 BGB540 BFP540. GPS05605 RF POWER TRANSISTOR NPN 3GHz NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice

    BFP540

    Abstract: Transistor BFP540 BGB540 GPS05605 T0559
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,


    Original     		PDF D-81541 BGB540 BGB540 BFP540. GPS05605 BFP540 Transistor BFP540 GPS05605 T0559

    N02 Transistor

    Abstract: AG TRANSISTOR transistor n02 Infineon Technologies transistor 4 ghz high frequency transistor array nh02
    Text: Infineon Technologies AG - Infineon Technologies AG Seite 1 von 3 Infineon Homepage High-Speed ASSPs and Bipolar ASICs Please Select A Topic Products - High-Speed ASSPs and Bipolar ASICs Array Architecture 6 GHz Analog Array 1. General information The analog are is designed for high frequency applications up to 6 GHz. The architecture of the analog area is


    Original     		PDF 00\WebSite\products\assp\bipolar\array\fl N02 Transistor AG TRANSISTOR transistor n02 Infineon Technologies transistor 4 ghz high frequency transistor array nh02

    transistor bfp420

    Abstract: INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420 VPS05605 OT343 transistor bfp420 INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor

    bfp740

    Abstract: what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT
    Text: Technical Report, 2008-Nov-21 Technical Report BFP740 LNA for 3.5GHz WiMax Application Technical Report TR104 Device: BFP740 Application: LNA for 3.5 GHz WiMax Application Revision: Rev. 1.0 Date:


    Original     		PDF 2008-Nov-21 BFP740 TR104 BFP740 what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT

    transistor BC 245

    Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
    Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		PDF BFP450 VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405 VPS05605 OT343

    BFP420 application notes

    Abstract: Transistor BFP420 BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420 VPS05605 OT343 BFP420 application notes Transistor BFP420 BFP420

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		PDF BFP450 VPS05605 OT343

    BFP420 application notes

    Abstract: INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420 OT343 BFP420 application notes INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420

    TRANSISTOR MARKING FA

    Abstract: EHA07307 CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F TRANSISTOR MARKING FA EHA07307 CJE marking diode

    EHA07307

    Abstract: CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F EHA07307 CJE marking diode

    BFP740

    Abstract: BFP740 application note TR103 bfp740 board
    Text: Technical Report, 2008-Dec-03 Technical Report LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application Technical Report TR103 Device: BFP740 Application: WiMax LNA for 2.3 – 2.7 GHz Revision: Rev. 1.0


    Original     		PDF 2008-Dec-03 BFP740 TR103 BFP740 BFP740 application note TR103 bfp740 board

    Infineon Technologies transistor 4 ghz

    Abstract: BFP405 BGA420
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP405 OT343 Infineon Technologies transistor 4 ghz BFP405 BGA420

    INFINEON BFP420 Ams

    Abstract: BFP420 BGA420
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420 OT343 INFINEON BFP420 Ams BFP420 BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP405F

    BFP405F

    Abstract: BFP420F TSFP-4
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP405F BFP405F BFP420F TSFP-4

    BFP405 ALs

    Abstract: No abstract text available
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405 VPS05605 OT343 BFP405 ALs

    marking ans

    Abstract: BFP450 BGA420
    Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability


    Original     		PDF BFP450 OT343 marking ans BFP450 BGA420

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F

    BFP181

    Abstract: BFP182
    Text: BFP182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP182 OT143 BFP181 BFP182

    BFP450

    Abstract: BGA420
    Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability


    Original     		PDF BFP450 OT343 BFP450 BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR182