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    INFINEON IGBT4 1200V Search Results

    INFINEON IGBT4 1200V Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    iW1821-11 Renesas Electronics Corporation 1200V AccuSwitch™ AC/DC Digital Primary-Side Converter for Three-Phase Industrial Applications up to 12W Visit Renesas Electronics Corporation
    iW1821-00 Renesas Electronics Corporation 1200V AccuSwitch™ AC/DC Digital Primary-Side Converter for Three-Phase Industrial Applications up to 12W Visit Renesas Electronics Corporation
    iW1821-01 Renesas Electronics Corporation 1200V AccuSwitch™ AC/DC Digital Primary-Side Converter for Three-Phase Industrial Applications up to 12W Visit Renesas Electronics Corporation

    INFINEON IGBT4 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    infineon power cycling igbt3

    Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
    Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,


    Original     		PDF D-59581 200V-Trench- 1998-Kyoto 2003N 00V-IGBT³ 2004-N infineon power cycling igbt3 IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT igbt simulation IGBT2

    SiC IGBT High Power Modules

    Abstract: SiC JFET SiC-JFET infineon power cycling ups high power FET Transistor "silicon carbide" FET silicon carbide JFET high power FET Transistor for ups infineon igbt power solar inverter silicon carbide j-fet
    Text: Product Brief main Features 1200V IGBT 4 n n n n THe neW 1200V IGBT 4 generation combined with the improved emitter Controlled diode from Infineon provides three optimized chip versions for low, medium and high power IGBT modules. These chips are designed to the needs


    Original     		PDF B133-H9049-G2-X-7600 SiC IGBT High Power Modules SiC JFET SiC-JFET infineon power cycling ups high power FET Transistor "silicon carbide" FET silicon carbide JFET high power FET Transistor for ups infineon igbt power solar inverter silicon carbide j-fet

    UL1557

    Abstract: inverter stand alone 150a 1200V IGBT infineon dual infineon igbt 1200v 600A E83336
    Text: Product Brief Main Features 34 mm & 62 mm IGBT Modules • ■ ■ ■ FLEXIBILITY, OPTIMAL ELECTRICAL PERFORMANCE, HIGHEST RELIABILITY. Here are the keywords for a successful inverter layout. Our well-known 34 and 62mm modules are the right choice for your design.


    Original     		PDF UL1557 E83336 UL1557 inverter stand alone 150a 1200V IGBT infineon dual infineon igbt 1200v 600A E83336

    IFS200V12PT4

    Abstract: coreless transformer Technology infineon igbt power solar inverter pcb diagram welding inverter solar inverters circuit diagram infineon igbt reliability delta UPS circuit diagram IFS100B12N3 Optical Couplers INVERTER TRANSFORMER solar
    Text: MIPAQ – More Than you expect! Infineon’s functional IGBT module family [ www.infineon.com/mipaq ] MIPAQ™ family Applications The MIPAQ™ modules enable highly efficient power inverter designs to be used in Industrial drives, such as compressors,


    Original     		PDF B133-H9385-X-X-7600 IFS200V12PT4 coreless transformer Technology infineon igbt power solar inverter pcb diagram welding inverter solar inverters circuit diagram infineon igbt reliability delta UPS circuit diagram IFS100B12N3 Optical Couplers INVERTER TRANSFORMER solar

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    pcb diagram welding inverter

    Abstract: solar inverters circuit diagram IFS100S12N3T4_B11 Coreless pcb transformer INVERTER TRANSFORMER solar IFS150V12PT4 infineon igbt reliability advantage and disadvantage of igbt IFS75S12N3T4_B11 Ultrasonic Range Finder
    Text: MIPAQ – More Than you expect! Infineon’s functional IGBT module family [ www.infineon.com/mipaq ] MIPAQ™ family Applications The MIPAQ™ modules enable highly efficient power inverter designs to be used in Industrial drives, such as compressors,


    Original     		PDF

    welding transformer SCR

    Abstract: thyristor control arc welding rectifier circuit single phase inverter IGBT driver 50 kva 200 A WELDING INVERTER DESIGN BY IGBT 1ED020I12-F chopper transformer FOR UPS press-pack igbt electrolysis variable speed drive with thyristor single phase parallel inverter using 2 SCR
    Text: High Power Semiconductors Best-in-class products to meet your application demands [ www.infineon.com/highpower ] EasyPIM , EasyPACK EconoPIM™, EconoPACK™ The easy way with compact modules Trendsetting in case design and IGBT technology Product range


    Original     		PDF

    AN2008-01

    Abstract: IGBT2 IGBT1 infineon
    Text: Application Note, V1.0, 2008 AN2008-01 Technical Information IGBT Modules Definition and use of junction temperature values Industrial Power We Listen to Your Comments Any information within this document that you feel is wrong, Your feedback will help us to continuously improve the


    Original     		PDF AN2008-01 1600/1700V AN2008-01 IGBT2 IGBT1 infineon

    Untitled

    Abstract: No abstract text available
    Text: IGC99T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC99T120T6RH VCE ICn 1200V 100A This chip is used for: • medium / high power modules


    Original     		PDF IGC99T120T6RH L7683A,

    Untitled

    Abstract: No abstract text available
    Text: IGC07T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC07T120T6L L7483C,

    Untitled

    Abstract: No abstract text available
    Text: IGC70T120T6RM IGBT4 Medium Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules C Applications: • medium power drives


    Original     		PDF IGC70T120T6RM L7673B,

    Untitled

    Abstract: No abstract text available
    Text: IGC18T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC18T120T6L L7633C,

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RM IGBT4 Medium Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • soft turnoff • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC142T120T6 RM 1200V 150A This chip is used for:


    Original     		PDF IGC142T120T6RM IGC142T120T6 L7693B,

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC109T120T6 RH VCE ICn 1200V 110A This chip is used for: • medium / high power modules


    Original     		PDF IGC109T120T6RH IGC109T120T6 L7742A,

    Untitled

    Abstract: No abstract text available
    Text: IGC18T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC18T120T6L L7633C,

    Untitled

    Abstract: No abstract text available
    Text: IGC13T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC13T120T6L L7623C,

    Untitled

    Abstract: No abstract text available
    Text: IGC99T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC99T120T6RH VCE ICn 1200V 100A This chip is used for: • medium / high power modules


    Original     		PDF IGC99T120T6RH 140in L7683A,

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC142T120T6RL IGC142T120T6 L7693C,

    Untitled

    Abstract: No abstract text available
    Text: IGC36T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC36T120T6L L7653C,

    infineon igbt4 1200v

    Abstract: No abstract text available
    Text: IGC11T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC11T120T6L L7613C, infineon igbt4 1200v

    Untitled

    Abstract: No abstract text available
    Text: IGC27T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC27T120T6L L7643C,

    Untitled

    Abstract: No abstract text available
    Text: IGC193T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		PDF IGC193T120T8RM IGC193T120T8RM L7713U, L7713O,

    Untitled

    Abstract: No abstract text available
    Text: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC11T120T8L L7613V, L7613P,

    Untitled

    Abstract: No abstract text available
    Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:


    Original     		PDF IGC70T120T8RM L7673U, L7673O,